ACNP - Italian Periodicals Catalogue

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Results: 1-12 |

Results: 12

INFLUENCE OF THE THERMAL HISTORY OF MELTS ON THE FORMATION OF GROWN-IN DEFECTS IN SILICON

Authors: IKARI A IZUNOME K KAWANISHI S TOGAWA S TERASHIMA K KIMURA S

Citation: A. Ikari et al., INFLUENCE OF THE THERMAL HISTORY OF MELTS ON THE FORMATION OF GROWN-IN DEFECTS IN SILICON, Journal of crystal growth, 167(1-2), 1996, pp. 361-364

OXYGEN-TRANSPORT FROM A SILICA CRUCIBLE IN CZOCHRALSKI SILICON GROWTH

Authors: TOGAWA S IZUNOME K KAWANISHI S CHUNG SI TERASHIMA K KIMURA S

Citation: S. Togawa et al., OXYGEN-TRANSPORT FROM A SILICA CRUCIBLE IN CZOCHRALSKI SILICON GROWTH, Journal of crystal growth, 165(4), 1996, pp. 362-371

DENSITY ANOMALY EFFECT UPON SILICON MELT FLOW DURING CZOCHRALSKI CRYSTAL-GROWTH .1. UNDER THE GROWTH INTERFACE

Authors: TOGAWA S CHUNG SI KAWANISHI S IZUNOME K TERASHIMA K KIMURA S

Citation: S. Togawa et al., DENSITY ANOMALY EFFECT UPON SILICON MELT FLOW DURING CZOCHRALSKI CRYSTAL-GROWTH .1. UNDER THE GROWTH INTERFACE, Journal of crystal growth, 160(1-2), 1996, pp. 41-48

DENSITY ANOMALY EFFECT UPON SILICON MELT FLOW DURING CZOCHRALSKI CRYSTAL-GROWTH .2. TIME-TOPICAL FLOW STRUCTURE UNDER THE GROWTH INTERFACE

Authors: TOGAWA S CHUNG SI KAWANISHI S IZUNOME K TERASHIMA K KIMURA S

Citation: S. Togawa et al., DENSITY ANOMALY EFFECT UPON SILICON MELT FLOW DURING CZOCHRALSKI CRYSTAL-GROWTH .2. TIME-TOPICAL FLOW STRUCTURE UNDER THE GROWTH INTERFACE, Journal of crystal growth, 160(1-2), 1996, pp. 49-54

INFLUENCE OF SURFACE MELT FLOW ON OXYGEN INHOMOGENEITY IN CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTAL - STUDIED BY DOUBLE-LAYERED CZOCHRALSKI (DLCZ) MELT QUENCHING TECHNIQUE

Authors: KAWANISHI S TOGAWA S IZUNOME K TERASHIMA K KIMURA S

Citation: S. Kawanishi et al., INFLUENCE OF SURFACE MELT FLOW ON OXYGEN INHOMOGENEITY IN CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTAL - STUDIED BY DOUBLE-LAYERED CZOCHRALSKI (DLCZ) MELT QUENCHING TECHNIQUE, JPN J A P 1, 34(11), 1995, pp. 5885-5890

SURFACE-TENSION OF A SI MELT - INFLUENCE OF OXYGEN PARTIAL-PRESSURE

Authors: HUANG XM TOGAWA S CHUNG SI TERASHIMA K KIMURA S

Citation: Xm. Huang et al., SURFACE-TENSION OF A SI MELT - INFLUENCE OF OXYGEN PARTIAL-PRESSURE, Journal of crystal growth, 156(1-2), 1995, pp. 52-58

MELT QUENCHING TECHNIQUE FOR DIRECT OBSERVATION OF OXYGEN-TRANSPORT IN THE CZOCHRALSKI-GROWN SI PROCESS

Authors: KAWANISHI S TOGAWA S IZUNOME K TERASHIMA K KIMURA S

Citation: S. Kawanishi et al., MELT QUENCHING TECHNIQUE FOR DIRECT OBSERVATION OF OXYGEN-TRANSPORT IN THE CZOCHRALSKI-GROWN SI PROCESS, Journal of crystal growth, 152(4), 1995, pp. 266-273

CONTROL OF OXYGEN CONCENTRATION IN HEAVILY ANTIMONY-DOPED CZOCHRALSKISI CRYSTALS BY AMBIENT ARGON PRESSURE

Authors: IZUNOME K HUANG XM TOGAWA S TERASHIMA K KIMURA S

Citation: K. Izunome et al., CONTROL OF OXYGEN CONCENTRATION IN HEAVILY ANTIMONY-DOPED CZOCHRALSKISI CRYSTALS BY AMBIENT ARGON PRESSURE, Journal of crystal growth, 151(3-4), 1995, pp. 291-294

OXYGEN-TRANSPORT ANALYSIS IN CZOCHRALSKI SILICON MELT BY CONSIDERING THE OXYGEN EVAPORATION FROM THE MELT SURFACE

Authors: TOGAWA S HUANG XM IZUNOME K TERASHIMA K KIMURA S

Citation: S. Togawa et al., OXYGEN-TRANSPORT ANALYSIS IN CZOCHRALSKI SILICON MELT BY CONSIDERING THE OXYGEN EVAPORATION FROM THE MELT SURFACE, Journal of crystal growth, 148(1-2), 1995, pp. 70-78

OXYGEN-TRANSPORT MECHANISM IN CZOCHRALSKI SILICON MELT .1. THE WHOLE BULK MELT

Authors: TOGAWA S SHIRAISHI Y TERASHIMA K KIMURA S

Citation: S. Togawa et al., OXYGEN-TRANSPORT MECHANISM IN CZOCHRALSKI SILICON MELT .1. THE WHOLE BULK MELT, Journal of the Electrochemical Society, 142(8), 1995, pp. 2839-2844

OXYGEN-TRANSPORT MECHANISM IN CZOCHRALSKI SILICON MELT .2. VICINITY OF GROWTH INTERFACE

Authors: TOGAWA S SHIRAISHI Y TERASHIMA K KIMURA S

Citation: S. Togawa et al., OXYGEN-TRANSPORT MECHANISM IN CZOCHRALSKI SILICON MELT .2. VICINITY OF GROWTH INTERFACE, Journal of the Electrochemical Society, 142(8), 1995, pp. 2844-2848

SOLID-STATE ULTRAVIOLET TUNABLE LASER - A CE3+ DOPED LIYF4, CRYSTAL

Authors: OKADA F TOGAWA S OHTA K KODA S

Citation: F. Okada et al., SOLID-STATE ULTRAVIOLET TUNABLE LASER - A CE3+ DOPED LIYF4, CRYSTAL, Journal of applied physics, 75(1), 1994, pp. 49-53

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