AAAAAA
Results:
1-14
|
Results: 14
Authors:
BENBRIK J
PERDU P
BENTEO B
DESPLATS R
LABAT N
TOUBOUL A
DANTO Y
Citation: J. Benbrik et al., INDUCED DAMAGES ON CMOS AND BIPOLAR INTEGRATED STRUCTURES UNDER FOCUSED ION-BEAM IRRADIATION, Microelectronics and reliability, 38(6-8), 1998, pp. 901-905
Authors:
MONTAGNER X
BRIAND R
FOUILLAT P
SCHRIMPF RD
TOUBOUL A
GALLOWAY KF
CALVET MC
CALVEL P
Citation: X. Montagner et al., DOSE-RATE AND IRRADIATION TEMPERATURE-DEPENDENCE OF BJT SPICE MODEL RAD-PARAMETERS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1431-1437
Authors:
LABAT N
TOUBOUL A
Citation: N. Labat et A. Touboul, 8TH EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF-97), Microelectronics and reliability, 37(10-11), 1997, pp. 9-10
Authors:
LABAT N
SAYSSET N
TOUBOUL A
DANTO Y
COVA P
FANTINI F
Citation: N. Labat et al., ANALYSIS OF HOT-ELECTRON DEGRADATIONS IN PSEUDOMORPHIC HEMTS BY DCTS AND LF NOISE CHARACTERIZATION, Microelectronics and reliability, 37(10-11), 1997, pp. 1675-1678
Authors:
MANEUX C
LABAT N
SAYSSET N
TOUBOUL A
DANTO Y
Citation: C. Maneux et al., EXPERIMENTAL-ANALYSIS AND 2D SIMULATION OF ALGAAS GAAS HBT BASE LEAKAGE CURRENT/, Microelectronics and reliability, 37(10-11), 1997, pp. 1707-1710
Authors:
MONTAGNER X
FOUILLAT P
BRIAND R
SCHRIMPF RD
TOUBOUL A
GALLOWAY KF
CALVET MC
CALVEL P
Citation: X. Montagner et al., IMPLEMENTATION OF TOTAL-DOSE EFFECTS IN THE BIPOLAR JUNCTION TRANSISTOR GUMMEL-POON MODEL, IEEE transactions on nuclear science, 44(6), 1997, pp. 1922-1929
Authors:
LABAT N
TOUBOUL A
Citation: N. Labat et A. Touboul, SPECIAL ISSUE - PAPERS PRESENTED AT THE EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS 1995 (ESREF-95)BORDEAUX-ARCACHON, FRANCE, OCTOBER 1995, Quality and reliability engineering international, 12(4), 1996, pp. 219-219
Authors:
SAYSSET N
LABAT N
TOUBOUL A
DANTO Y
DUMAS JM
Citation: N. Saysset et al., COMPARISON OF CONVENTIONAL AND PSEUDOMORPHIC HEMTS PERFORMANCES BY DRAIN CURRENT TRANSIENT SPECTROSCOPY AND LF CHANNEL NOISE, Quality and reliability engineering international, 12(4), 1996, pp. 309-315
Authors:
MODJTAHEDI A
LAMAIGNERE L
VERDIER F
TOUBOUL A
CARMONA F
Citation: A. Modjtahedi et al., A CURRENT SELF-LIMITED PROTECTIVE DEVICE STUDIED BY LF-NOISE MEASUREMENTS, Microelectronics and reliability, 36(11-12), 1996, pp. 1759-1762
Authors:
RIVIERE V
TOUBOUL A
BENAMOR S
GREGORIS G
Citation: V. Riviere et al., VALIDATION OF YIELD MODELS WITH CMOS SOS TEST STRUCTURES/, Microelectronics and reliability, 36(11-12), 1996, pp. 1831-1834
Authors:
MANEUX C
LABAT N
SAYSSET N
TOUBOUL A
DANTO Y
DANGLA J
LAUNAY P
DUMAS JM
Citation: C. Maneux et al., ANALYSIS OF THE SURFACE BASE CURRENT DRIFT IN GAAS HBTS, Microelectronics and reliability, 36(11-12), 1996, pp. 1903-1906
Authors:
FOUILLAT P
LAPUYADE H
TOUBOUL A
DOM JP
GAILLARD R
Citation: P. Fouillat et al., NUMERICAL MODELING OF MECHANISMS INVOLVED IN LATCHUP TRIGGERING BY A LASER-BEAM, IEEE transactions on nuclear science, 43(3), 1996, pp. 944-951
Authors:
SAYSSET N
MANEUX C
LABAT N
TOUBOUL A
DANTO Y
DUMAS JM
Citation: N. Saysset et al., LF EXCESS NOISE-ANALYSIS OF ALGAAS GAAS AND ALGAAS/INGAAS/GAAS HEMTS/, Journal de physique. III, 5(5), 1995, pp. 509-517
Authors:
BERLAND V
TOUBOUL A
CREVEL P
Citation: V. Berland et al., COMPARISON OF THE LOW-FREQUENCY NOISE EVOLUTION WITH THE OXIDE TRAPPED CHARGE IN IRRADIATED N-MOS TRANSISTORS, IEEE transactions on nuclear science, 41(3), 1994, pp. 561-564
Risultati:
1-14
|