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Results: 1-20 |
Results: 20
EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
Authors: CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV FALEEV NN PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Vv. Chaldyshev et al., EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 692-695
ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
Authors: CHALDYSHEV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR BERT NA KUNITSYN AE MUSIKHIN YG TRETYAKOV VV WERNER P
Citation: Vv. Chaldyshev et al., ARSENIC CLUSTER SUPERLATTICE IN GALLIUM-ARSENIDE GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1036-1039
HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: FALEEV NN CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Nn. Faleev et al., HIGH-RESOLUTION X-RAY-DIFFRACTION STUDY OF INAS-GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductors, 32(1), 1998, pp. 19-25
EPMA DETERMINATION OF ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS
Authors: CHALDYSHEV VV TRETYAKOV VV
Citation: Vv. Chaldyshev et Vv. Tretyakov, EPMA DETERMINATION OF ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS, Mikrochimica acta (1966), 1998, pp. 187-189
EPMA OF THE COMPOSITION OF OPAL-BASED NANOSTRUCTURED MATERIALS
Authors: TRETYAKOV VV ROMANOV SG FOKIN AV ALPEROVICH VI
Citation: Vv. Tretyakov et al., EPMA OF THE COMPOSITION OF OPAL-BASED NANOSTRUCTURED MATERIALS, Mikrochimica acta (1966), 1998, pp. 211-217
STRUCTURAL AND NOISE CHARACTERIZATION OF VO2 FILMS ON SIO2 SI SUBSTRATES/
Authors: BAIDAKOVA MV BOBYL AV MALYAROV VG TRETYAKOV VV KHREBTOV IA SHAGANOV II
Citation: Mv. Baidakova et al., STRUCTURAL AND NOISE CHARACTERIZATION OF VO2 FILMS ON SIO2 SI SUBSTRATES/, Technical physics letters, 23(7), 1997, pp. 520-522
MECHANISMS OF CATION DEFECT FORMATION IN EPITAXIAL YBA2CU3O7-X FILMS
Authors: BERT NA LUNEV AV MUSIKHIN YG SURIS RA TRETYAKOV VV BOBYL AV KARMANENKO SF DEDOBOREZ AI
Citation: Na. Bert et al., MECHANISMS OF CATION DEFECT FORMATION IN EPITAXIAL YBA2CU3O7-X FILMS, Physica. C, Superconductivity, 280(3), 1997, pp. 121-136
2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
Authors: BERT NA CHALDYSHEV VV FALEEV NN KUNITSYN AE LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR TRETYAKOV VV
Citation: Na. Bert et al., 2-DIMENSIONAL PRECIPITATION OF AS CLUSTERS DUE TO INDIUM DELTA-DOPINGOF GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, Semiconductor science and technology, 12(1), 1997, pp. 51-54
ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING
Authors: BERT NA CHALDYSHEV VV KUNITSYN AE MUSIKHIN YG FALEEV NN TRETYAKOV VV PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation: Na. Bert et al., ENHANCED ARSENIC EXCESS IN LOW-TEMPERATURE-GROWN GAAS DUE TO INDIUM DOPING, Applied physics letters, 70(23), 1997, pp. 3146-3148
MOLECULAR-BEAM EPITAXY GROWTH-KINETICS FOR GROUP-III NITRIDES
Authors: FOXON CT CHENG TS HOOPER SE JENKINS LC ORTON JW LACKLISON DE NOVIKOV SV POPOVA TB TRETYAKOV VV
Citation: Ct. Foxon et al., MOLECULAR-BEAM EPITAXY GROWTH-KINETICS FOR GROUP-III NITRIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2346-2348
IMPLANTATION OF AS IN GAN EPITAXIAL LAYERS DURING MOLECULAR-BEAM EPITAXY
Authors: BER BY MERKULOV AV NOVIKOV SV TRETYAKOV VV CHENG TS FOXON CT JENKINS LC HOOPER SE LACKLISON DE ORTON JW
Citation: By. Ber et al., IMPLANTATION OF AS IN GAN EPITAXIAL LAYERS DURING MOLECULAR-BEAM EPITAXY, Semiconductors, 30(3), 1996, pp. 293-296
IMPURITY DISTRIBUTION IN GAN LAYERS OBTAINED BY THE MOLECULAR-BEAM EPITAXY METHOD
Authors: CHENG TS JENKINS LC HOOPER SE FOXON CT BER BY MERKULOV AV NOVIKOV SV TRETYAKOV VV
Citation: Ts. Cheng et al., IMPURITY DISTRIBUTION IN GAN LAYERS OBTAINED BY THE MOLECULAR-BEAM EPITAXY METHOD, Semiconductors, 30(2), 1996, pp. 164-166
POTENTIALITY OF THE CONTROL OF OPTICAL-PR OPERTIES OF 3-DIMENSIONAL SOFT PHOTON CRYSTALS BASED ON OPALS
Authors: ROMANOV SG FOKIN AV BUTKO VY TRETYAKOV VV SAMOILOVICH SM SOTOMAIORTORRES KM
Citation: Sg. Romanov et al., POTENTIALITY OF THE CONTROL OF OPTICAL-PR OPERTIES OF 3-DIMENSIONAL SOFT PHOTON CRYSTALS BASED ON OPALS, Fizika tverdogo tela, 38(11), 1996, pp. 3347-3360
MECHANISMS OF NITROGEN INCORPORATION IN (ALGA)(ASN) FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: CHENG TS FOXON CT JENKINS LC HOOPER SE ORTON JW NOVIKOV SV POPOVA TB TRETYAKOV VV
Citation: Ts. Cheng et al., MECHANISMS OF NITROGEN INCORPORATION IN (ALGA)(ASN) FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 158(4), 1996, pp. 399-402
AUGER-ELECTRON SPECTROSCOPY, X-RAY-DIFFRACTION, AND SCANNING ELECTRON-MICROSCOPY OF INN, GAN, AND GA(ASN) FILMS ON GAP AND GAAS(001) SUBSTRATES
Authors: JENKINS LC CHENG TS FOXON CT HOOPER SE ORTON JW NOVIKOV SV TRETYAKOV VV
Citation: Lc. Jenkins et al., AUGER-ELECTRON SPECTROSCOPY, X-RAY-DIFFRACTION, AND SCANNING ELECTRON-MICROSCOPY OF INN, GAN, AND GA(ASN) FILMS ON GAP AND GAAS(001) SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1585-1590
THE INFLUENCE OF ELASTIC AND IONIZATION CROSS-SECTION APPROXIMATIONS ON THE RESULT OF MONTE-CARLO CALCULATIONS
Authors: BAKALEINIKOV LA TRETYAKOV VV
Citation: La. Bakaleinikov et Vv. Tretyakov, THE INFLUENCE OF ELASTIC AND IONIZATION CROSS-SECTION APPROXIMATIONS ON THE RESULT OF MONTE-CARLO CALCULATIONS, Scanning, 17(4), 1995, pp. 243-249
THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES
Authors: FOXON CT CHENG TS NOVIKOV SV LACKLISON DE JENKINS LC JOHNSTON D ORTON JW HOOPER SE BABAALI N TANSLEY TL TRETYAKOV VV
Citation: Ct. Foxon et al., THE GROWTH AND PROPERTIES OF GROUP-III NITRIDES, Journal of crystal growth, 150(1-4), 1995, pp. 892-896
FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES
Authors: BER BY BYSTROV SD ZUSHINSKII DA KORNYAKOVA OV TUAN L NOVIKOV SV SAVELEV IG TRETYAKOV VV CHALDYSHEV VV SHMARTSEV YV
Citation: By. Ber et al., FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES, Semiconductors, 27(9), 1993, pp. 818-820
LOW-TEMPERATURE, MBE-GROWN GALLIUM-ARSENI DE - CRYSTALLINE-STRUCTURE,PROPERTIES, SUPERCONDUCTIVITY
Authors: BERT NA VEINGER AI VILISOVA MD GOLOSHCHAPOV SI IVONIN IV KOZYREV SV KUNITSYN AE LAVRENTYEVA LG LUBYSHEV DI PREOBRAZHENSKII VV SEMYAGIN BR TRETYAKOV VV CHALDYSHEV VV YAKUBENYA MP
Citation: Na. Bert et al., LOW-TEMPERATURE, MBE-GROWN GALLIUM-ARSENI DE - CRYSTALLINE-STRUCTURE,PROPERTIES, SUPERCONDUCTIVITY, Fizika tverdogo tela, 35(10), 1993, pp. 2609-2625
DETERMINATION OF COMPOSITION, DENSITY AND THE ANALYSIS OF COMPOSITIONHETEROGENEITIES BY THE DENSITY OF Y1BA2CU3OY-BASED SUBMICRON FILMS BYTHE X-RAY SPECTRAL MICROANALYSIS TECHNIQUE
Authors: TRETYAKOV VV KONNIKOV SG KORNYAKOVA OV
Citation: Vv. Tretyakov et al., DETERMINATION OF COMPOSITION, DENSITY AND THE ANALYSIS OF COMPOSITIONHETEROGENEITIES BY THE DENSITY OF Y1BA2CU3OY-BASED SUBMICRON FILMS BYTHE X-RAY SPECTRAL MICROANALYSIS TECHNIQUE, Zurnal tehniceskoj fiziki, 63(11), 1993, pp. 176-181
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