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Results:
1-19
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Results: 19
Authors:
TSAI JY
SHI Y
PRASAD S
YEH SWC
RAKKHIT R
Citation: Jy. Tsai et al., SLIGHT GATE OXIDE THICKNESS INCREASE IN PMOS DEVICES WITH BF2 IMPLANTED POLYSILICON GATE, IEEE electron device letters, 19(9), 1998, pp. 348-350
STRUCTURE OF THE PRODUCTS OF THE CYCLOOLIGOMERIZATION OF SULFUR-DIOXIDE WITH DIETHYL DIALLYLMALONATE
Authors:
TSAI JY
SHEVLIN PB
Citation: Jy. Tsai et Pb. Shevlin, STRUCTURE OF THE PRODUCTS OF THE CYCLOOLIGOMERIZATION OF SULFUR-DIOXIDE WITH DIETHYL DIALLYLMALONATE, Journal of organic chemistry, 63(10), 1998, pp. 3230-3234
Authors:
SUN JJ
TSAI JY
OSBURN CM
Citation: Jj. Sun et al., ELEVATED N(+) P JUNCTIONS BY IMPLANT INTO COSI2 FORMED ON SELECTIVE EPITAXY FOR DEEP-SUBMICRON MOSFETS/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1946-1952
Authors:
CHANG KM
YEH TH
WANG SW
LI CH
TSAI JY
YANG JY
Citation: Km. Chang et al., INTERFACE CHARACTERISTICS OF SELECTIVE TUNGSTEN ON SILICON USING A NEW PRETREATMENT TECHNOLOGY FOR ULSI APPLICATION, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 738-743
Authors:
CHANG KM
LI CH
FAHN FJ
TSAI JY
YEH TH
WANG SW
YANG JY
Citation: Km. Chang et al., THE INFLUENCE OF PRECLEANING PROCESS ON THE GATE OXIDE FILM FABRICATED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION, Journal of the Electrochemical Society, 144(1), 1997, pp. 311-314
Authors:
TSAI JY
BERKERY L
WESSON DE
REDO SF
SPIGLAND NA
Citation: Jy. Tsai et al., ESOPHAGEAL ATRESIA AND TRACHEOESOPHAGEAL FISTULA - SURGICAL EXPERIENCE OVER 2 DECADES, The Annals of thoracic surgery, 64(3), 1997, pp. 778-783
Authors:
CHANG KM
WANG SW
LI CH
TSAI JY
YEH TH
Citation: Km. Chang et al., REDUCTION OF SELECTIVITY LOSS PROBABILITY ON DIELECTRIC SURFACE DURING CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN USING FLUORINATED OXIDE AND REMOVING SILANOL UNITS ON DIELECTRIC SURFACE, JPN J A P 1, 35(12B), 1996, pp. 6555-6561
Authors:
TSAI JY
SUN J
YEE KF
OSBURN CM
Citation: Jy. Tsai et al., DIBL CONSIDERATIONS OF EXTENDED DRAIN STRUCTURE FOR 0.1 MU-M MOSFETS, IEEE electron device letters, 17(7), 1996, pp. 331-333
Authors:
OSBURN CM
TSAI JY
SUN J
Citation: Cm. Osburn et al., METAL SILICIDES - ACTIVE ELEMENTS OF ULSI CONTACTS, Journal of electronic materials, 25(11), 1996, pp. 1725-1739
Authors:
TSAI JY
SILVER LM
Citation: Jy. Tsai et Lm. Silver, SPERM-EGG BINDING-PROTEIN OR PROTOONCOGENE, Science, 271(5254), 1996, pp. 1432-1434
Authors:
CHANG KM
TSAI JY
LI CH
YEH TH
WANG SW
YANG JY
Citation: Km. Chang et al., EFFECTS OF GAS RATIO ON ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE NITRIDE FILMS GROWN AT ROOM-TEMPERATURE, Journal of applied physics, 79(11), 1996, pp. 8503-8506
Authors:
TSAI JY
APTE P
Citation: Jy. Tsai et P. Apte, A THICKNESS MODEL FOR THE TISI2 TIN STACK IN THE TITANIUM SALICIDE PROCESS MODULE/, Thin solid films, 270(1-2), 1995, pp. 589-595
Authors:
REDDI PP
NAABYHANSEN S
AGUOLNIK I
TSAI JY
SILVER LM
FLICKINGER CJ
HERR JC
Citation: Pp. Reddi et al., COMPLEMENTARY DEOXYRIBONUCLEIC-ACID CLONING AND CHARACTERIZATION OF MSP-10 - THE MOUSE HOMOLOG OF HUMAN ACROSOMAL PROTEIN SP-10, Biology of reproduction, 53(4), 1995, pp. 873-881
Authors:
TSAI JY
OSBURN CM
CANOVAI CA
Citation: Jy. Tsai et al., SOLID SOURCE DIFFUSION FROM AGGLOMERATING SILICIDE SOURCES .2. EXPERIMENTAL RESULTS AND ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3149-3159
Authors:
TSAI JY
CANOVAI C
OSBURN CM
WANG QF
ROSE J
COWEN A
DENKER MS
Citation: Jy. Tsai et al., SOLID SOURCE DIFFUSION FROM AGGLOMERATING SILICIDE SOURCES .1. MEASUREMENT AND MODELING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 219-229
Authors:
TSAI JY
NAMINGONZALEZ ML
SILVER LM
Citation: Jy. Tsai et al., FALSE ASSOCIATION OF HUMAN ESTS, Nature genetics, 8(4), 1994, pp. 321-322
Authors:
TUNG CH
LEE HJ
TSAI JY
Citation: Ch. Tung et al., MULTISTAGE PRE-CANDIDATE SELECTION IN HANDWRITTEN CHINESE CHARACTER-RECOGNITION SYSTEMS, Pattern recognition, 27(8), 1994, pp. 1093-1102
Authors:
CHANG KM
TSAI JY
CHANG CY
Citation: Km. Chang et al., NEW PHYSICAL FORMULATION OF THE THERMIONIC EMISSION CURRENT AT THE HETEROJUNCTION INTERFACE, IEEE electron device letters, 14(7), 1993, pp. 338-341
Authors:
OSBURN CM
TSAI JY
WANG QF
ROSE J
COWEN A
Citation: Cm. Osburn et al., PREDICT-1.6 - MODELING OF METAL SILICIDE PROCESSES, Journal of the Electrochemical Society, 140(12), 1993, pp. 3660-3667
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