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Authors:
HSIEH JC
FANG YK
CHEN CW
TSAI NS
LIN MS
TSENG FC
Citation: Jc. Hsieh et al., THE ORIGINS OF THE PERFORMANCE DEGRADATION OF IMPLANTED P-CHANNEL MOSFET WITH WITHOUT RAPID THERMAL ANNEALING( POLYSILICON GATED P), I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 692-697
Authors:
HSIEH JC
FANG YK
CHEN CW
TSAI NS
LIN MS
TSENG FC
Citation: Jc. Hsieh et al., THE ANOMALOUS THRESHOLD VOLTAGE SHIFT OF N-MOSFET AND P-MOSFET UNDER FLOW AND REFLOW OF BPSG FILM WITH RTA AND OR FURNACE/, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 458-460
Authors:
HSIEH JC
FANG YK
CHEN CW
TSAI NS
LIN MS
TSENG FC
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Authors:
HSIEH JC
FANG YK
CHEN CW
TSAI NS
LIN MS
TSENG FC
Citation: Jc. Hsieh et al., STUDY AND IMPROVEMENT OF ANOMALOUS INTERFACE STATES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES INDUCED BY RAPID THERMAL POST-OXIDE ANNEALING, Journal of applied physics, 73(10), 1993, pp. 5038-5042
Authors:
HSIEH JC
FANG YK
CHEN CW
TSAI NS
LIN MS
TSENG FC
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