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Results: 1-5 |
Results: 5
THE ORIGINS OF THE PERFORMANCE DEGRADATION OF IMPLANTED P-CHANNEL MOSFET WITH WITHOUT RAPID THERMAL ANNEALING( POLYSILICON GATED P)
Authors: HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation: Jc. Hsieh et al., THE ORIGINS OF THE PERFORMANCE DEGRADATION OF IMPLANTED P-CHANNEL MOSFET WITH WITHOUT RAPID THERMAL ANNEALING( POLYSILICON GATED P), I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 692-697
THE ANOMALOUS THRESHOLD VOLTAGE SHIFT OF N-MOSFET AND P-MOSFET UNDER FLOW AND REFLOW OF BPSG FILM WITH RTA AND OR FURNACE/
Authors: HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation: Jc. Hsieh et al., THE ANOMALOUS THRESHOLD VOLTAGE SHIFT OF N-MOSFET AND P-MOSFET UNDER FLOW AND REFLOW OF BPSG FILM WITH RTA AND OR FURNACE/, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 458-460
CHARACTERISTICS OF MOS CAPACITORS OF BF2 OR B-IMPLANTED POLYSILICON GATE WITH AND WITHOUT POCL3 CO-DOPED
Authors: HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation: Jc. Hsieh et al., CHARACTERISTICS OF MOS CAPACITORS OF BF2 OR B-IMPLANTED POLYSILICON GATE WITH AND WITHOUT POCL3 CO-DOPED, IEEE electron device letters, 14(5), 1993, pp. 222-224
STUDY AND IMPROVEMENT OF ANOMALOUS INTERFACE STATES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES INDUCED BY RAPID THERMAL POST-OXIDE ANNEALING
Authors: HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation: Jc. Hsieh et al., STUDY AND IMPROVEMENT OF ANOMALOUS INTERFACE STATES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES INDUCED BY RAPID THERMAL POST-OXIDE ANNEALING, Journal of applied physics, 73(10), 1993, pp. 5038-5042
EFFECT OF RAPID THERMAL ANNEALING ON GATE INDUCED DRAIN LEAKAGE IN A N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
Authors: HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation: Jc. Hsieh et al., EFFECT OF RAPID THERMAL ANNEALING ON GATE INDUCED DRAIN LEAKAGE IN A N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, Applied physics letters, 63(22), 1993, pp. 3058-3059
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