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Results: 1-12 |
Results: 12
GROWTH DYNAMICS OF GAAS ON A VICINAL SURFACE OF GAAS(100) IN MIGRATION-STIMULATED EPITAXY - COMPUTER-SIMULATION
Authors: TSYRLIN GE
Citation: Ge. Tsyrlin, GROWTH DYNAMICS OF GAAS ON A VICINAL SURFACE OF GAAS(100) IN MIGRATION-STIMULATED EPITAXY - COMPUTER-SIMULATION, Technical physics letters, 23(2), 1997, pp. 154-156
SYSTEM FOR RECORDING AND ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION PATTERNS
Authors: GURYANOV GM DEMIDOV VN KORNEEVA NP PETROV VN SAMSONENKO YB TSYRLIN GE
Citation: Gm. Guryanov et al., SYSTEM FOR RECORDING AND ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION PATTERNS, Technical physics, 42(8), 1997, pp. 956-960
FORMATION OF INGAAS GAAS NANOSTRUCTURES BY SUBMONOLAYER DEPOSITION FROM MOLECULAR-BEAMS/
Authors: TSYRLIN GE PETROV VN DUBROVSKII VG POLYAKOV NK TIPISEV SY GOLUBOK AO LEDENTSOV NN
Citation: Ge. Tsyrlin et al., FORMATION OF INGAAS GAAS NANOSTRUCTURES BY SUBMONOLAYER DEPOSITION FROM MOLECULAR-BEAMS/, Semiconductors, 31(8), 1997, pp. 768-772
LUMINESCENCE PROPERTIES OF INAS GAAS QUANTUM DOTS PREPARED BY SUBMONOLAYER MIGRATION-STIMULATED EPITAXY/
Authors: TSYRLIN GE PETROV VN MAKSIMOV MV LEDENTSOV NN
Citation: Ge. Tsyrlin et al., LUMINESCENCE PROPERTIES OF INAS GAAS QUANTUM DOTS PREPARED BY SUBMONOLAYER MIGRATION-STIMULATED EPITAXY/, Semiconductors, 31(8), 1997, pp. 777-780
A RHEED STUDY OF THE TRANSITION FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH IN THE INAS GAAS SYSTEM/
Authors: TSYRLIN GE KORNEEVA NP DEMIDOV VN POLYAKOV NK PETROV VN LEDENTSOV NN
Citation: Ge. Tsyrlin et al., A RHEED STUDY OF THE TRANSITION FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH IN THE INAS GAAS SYSTEM/, Semiconductors, 31(10), 1997, pp. 1057-1059
INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY (VOL 29, PG 884, 1995)/
Authors: TSYRLIN GE GOLUBOK AO TIPISEV SY LEDENTSOV NN GURYANOV GM
Citation: Ge. Tsyrlin et al., INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY (VOL 29, PG 884, 1995)/, Semiconductors, 30(3), 1996, pp. 314-314
SELF-ORGANIZATION OF STRAINED QUANTUM-SIZE INXGA1-XAS STRUCTURES GROWN ON MISORIENTED (100)SURFACES OF GAAS DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY
Authors: GURYANOV GM TSYRLIN GE PETROV VN SAMSONENKO YB GUBANOV VB POLYAKOV NK GOLUBOK AO TIPISEV SY MUSIKHINA EP
Citation: Gm. Guryanov et al., SELF-ORGANIZATION OF STRAINED QUANTUM-SIZE INXGA1-XAS STRUCTURES GROWN ON MISORIENTED (100)SURFACES OF GAAS DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY, Semiconductors, 29(9), 1995, pp. 854-857
INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY/
Authors: TSYRLIN GE GOLUBOK AO TIPISEV SY LEDENTSOV NN
Citation: Ge. Tsyrlin et al., INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY/, Semiconductors, 29(9), 1995, pp. 884-886
LUMINESCENCE PROPERTIES OF INAS QUANTUM DOTS ON VICINAL GAAS(100) SURFACE
Authors: LEDENTSOV NN MAKSIMOV MV TSYRLIN GE PETROV VN GURYANOV GM
Citation: Nn. Ledentsov et al., LUMINESCENCE PROPERTIES OF INAS QUANTUM DOTS ON VICINAL GAAS(100) SURFACE, Semiconductors, 29(7), 1995, pp. 671-673
EFFECT OF HEAT-TREATMENT CONDITIONS ON THE SURFACE-MORPHOLOGY OF GALLIUM-ARSENIDE GROWN ON VICINAL GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Authors: LEDENTSOV NN GURYANOV GM TSYRLIN GE PETROV VN SAMSONENKO YB GOLUBOK AO TIPISEV SY
Citation: Nn. Ledentsov et al., EFFECT OF HEAT-TREATMENT CONDITIONS ON THE SURFACE-MORPHOLOGY OF GALLIUM-ARSENIDE GROWN ON VICINAL GAAS (100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Semiconductors, 28(5), 1994, pp. 526-527
FORMATION OF ARRAYS OF FACETS ON VICINAL SURFACES OF GAAS (100) DURING MOLECULAR-BEAM EPITAXY
Authors: GOLUBOK AO GURYANOV GM PETROV VN SAMSONENKO YB TIPISEV SY TSYRLIN GE LEDENTSOV NN
Citation: Ao. Golubok et al., FORMATION OF ARRAYS OF FACETS ON VICINAL SURFACES OF GAAS (100) DURING MOLECULAR-BEAM EPITAXY, Semiconductors, 28(3), 1994, pp. 317-319
OPTICAL-PROPERTIES OF GAAS-ALGAAS QUANTUM -DIMENSIONAL HETEROSTRUCTURES GROWN BY THE MBE TECHNIQUE ON GAAS(100) VICINAL SURFACES
Authors: GUBANOV VB GURYANOV GM LEDENTSOV NN PETROV VN SAMSONENKO YB TSYRLIN GE
Citation: Vb. Gubanov et al., OPTICAL-PROPERTIES OF GAAS-ALGAAS QUANTUM -DIMENSIONAL HETEROSTRUCTURES GROWN BY THE MBE TECHNIQUE ON GAAS(100) VICINAL SURFACES, Pis'ma v Zurnal tehniceskoj fiziki, 19(21), 1993, pp. 73-77
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