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Results:
1-12
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Results: 12
Authors:
TURUT A
GUMUS A
SAGLAM M
TUZEMEN S
EFEOGLU H
YALCIN N
MISSOUS M
Citation: A. Turut et al., THERMAL-STABILITY OF CR-NI-CO ALLOY SCHOTTKY CONTACTS ON MBE N-GAAS, Semiconductor science and technology, 13(7), 1998, pp. 776-780
Authors:
NUHOGLU C
AYYILDIZ E
SAGLAM M
TURUT A
Citation: C. Nuhoglu et al., THERMAL-TREATMENT OF THE MIS AND INTIMATE NI N-LEC GAAS SCHOTTKY-BARRIER DIODES/, Applied surface science, 135(1-4), 1998, pp. 350-356
Authors:
SAGLAM M
TURUT A
NUHOGLU C
EFEOGLU H
KILICOGLU T
EBEOGLU MA
Citation: M. Saglam et al., INFLUENCES OF THERMAL ANNEALING, THE ELECTROLYTE PH, AND CURRENT-DENSITY ON THE INTERFACE STATE DENSITY DISTRIBUTION OF ANODIC MOS STRUCTURES, Applied physics A: Materials science & processing, 65(1), 1997, pp. 33-37
Authors:
SAGLAM M
TURUT A
Citation: M. Saglam et A. Turut, EFFECT OF THERMAL ANNEALING IN NITROGEN ON THE I-V AND C-V CHARACTERISTICS OF CR-NI-CO ALLOY LEC N-GAAS SCHOTTKY DIODES/, Semiconductor science and technology, 12(8), 1997, pp. 1028-1031
Authors:
ABAY B
ONGANER Y
SAGLAM M
EFEOGLU H
TURUT A
YOGURTCU YK
Citation: B. Abay et al., CHARACTERISTICS OF METALLIC POLYMER AND AU SCHOTTKY CONTACTS ON CLEAVED SURFACES OF INSE(ER), Solid-state electronics, 41(6), 1997, pp. 924-926
Authors:
SAGLAM M
AYYILDIZ E
GUMUS A
TURUT A
EFEOGLU H
TUZEMEN S
Citation: M. Saglam et al., SERIES RESISTANCE CALCULATION FOR THE METAL-INSULATOR-SEMICONDUCTOR SCHOTTKY-BARRIER DIODES, Applied physics A: Materials science & processing, 62(3), 1996, pp. 269-273
Authors:
TURUT A
BATI B
KOKCE A
SAGLAM M
YALCIN N
Citation: A. Turut et al., THE BIAS-DEPENDENCE CHANGE OF BARRIER HEIGHT OF SCHOTTKY DIODES UNDERFORWARD BIAS BY INCLUDING THE SERIES RESISTANCE EFFECT, Physica scripta. T, 53(1), 1996, pp. 118-122
Authors:
ONGANER Y
SAGLAM M
TURUT A
EFEOGLU H
TUZEMEN S
Citation: Y. Onganer et al., HIGH BARRIER METALLIC POLYMER P-TYPE SILICON SCHOTTKY DIODES, Solid-state electronics, 39(5), 1996, pp. 677-680
Authors:
AYYILDIZ E
TURUT A
EFEOGLU H
TUZEMEN S
SAGLAM M
YOGURTCU YK
Citation: E. Ayyildiz et al., EFFECT OF SERIES RESISTANCE ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF SCHOTTKY DIODES IN THE PRESENCE OF INTERFACIAL LAYER, Solid-state electronics, 39(1), 1996, pp. 83-87
Authors:
TURUT A
SAGLAM M
EFEOGLU H
YALCIN N
YILDIRIM M
ABAY B
Citation: A. Turut et al., INTERPRETING THE NONIDEAL REVERSE BIAS C-V CHARACTERISTICS AND IMPORTANCE OF THE DEPENDENCE OF SCHOTTKY-BARRIER HEIGHT ON APPLIED VOLTAGE, Physica. B, Condensed matter, 205(1), 1995, pp. 41-50
Authors:
KILICOGLU T
OZTURK ZZ
EBEOGLU MA
TURUT A
OZDEMIR M
ALTINDAL A
Citation: T. Kilicoglu et al., EFFECTS OF ELECTROLYTE PH ON ELECTRICAL-PROPERTIES OF THE INTERFACE BETWEEN N-INSB AND ITS ANODIC NATIVE-OXIDE, Indian Journal of Pure & Applied Physics, 33(4), 1995, pp. 205-209
Authors:
TURUT A
KOLELI F
Citation: A. Turut et F. Koleli, METALLIC POLYTHIOPHENE INORGANIC SEMICONDUCTOR SCHOTTKY DIODES, Physica. B, Condensed matter, 192(3), 1993, pp. 279-283
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1-12
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