ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

Dislocation-free Czochralski silicon crystal growth without dash necking

Authors: Huang, XM Taishi, T Yonenaga, I Hoshikawa, K

Citation: Xm. Huang et al., Dislocation-free Czochralski silicon crystal growth without dash necking, JPN J A P 1, 40(1), 2001, pp. 12-17

Measurement of temperature gradient in Czochralski silicon crystal growth

Authors: Huang, XM Taishi, T Wang, TF Hoshikawa, K

Citation: Xm. Huang et al., Measurement of temperature gradient in Czochralski silicon crystal growth, J CRYST GR, 229(1), 2001, pp. 6-10

Dynamic characteristics of dislocations in highly boron-doped silicon

Authors: Yonenaga, I Taishi, T Huang, X Hoshikawa, K

Citation: I. Yonenaga et al., Dynamic characteristics of dislocations in highly boron-doped silicon, J APPL PHYS, 89(10), 2001, pp. 5788-5790

In situ observation of the interfacial phase formation at Si melt/silica glass interface

Authors: Huang, XM Wang, TF Yamahara, K Taishi, T Hoshikawa, K

Citation: Xm. Huang et al., In situ observation of the interfacial phase formation at Si melt/silica glass interface, JPN J A P 1, 39(6A), 2000, pp. 3281-3285

Dislocation-free Czochralski Si crystal growth without the Dash-necking process: Growth from undoped Si melt

Authors: Taishi, T Huang, XM Fukami, T Hoshikawa, K

Citation: T. Taishi et al., Dislocation-free Czochralski Si crystal growth without the Dash-necking process: Growth from undoped Si melt, JPN J A P 2, 39(3AB), 2000, pp. L191-L194

Heavily boron-doped silicon single crystal growth: Constitutional supercooling

Authors: Taishi, T Huang, XM Kubota, M Kajigaya, T Fukami, T Hoshikawa, K

Citation: T. Taishi et al., Heavily boron-doped silicon single crystal growth: Constitutional supercooling, JPN J A P 2, 39(1AB), 2000, pp. L5-L8

Dislocation-free Czochralski Si crystal growth without dash necking using a heavily B and Ge codoped Si seed

Authors: Huang, XM Taishi, T Yonenaga, I Hoshikawa, K

Citation: Xm. Huang et al., Dislocation-free Czochralski Si crystal growth without dash necking using a heavily B and Ge codoped Si seed, JPN J A P 2, 39(11B), 2000, pp. L1115-L1117

Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling

Authors: Taishi, T Huang, XM Kubota, M Kajigaya, T Fukami, T Hoshikawa, K

Citation: T. Taishi et al., Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling, MAT SCI E B, 72(2-3), 2000, pp. 169-172

Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration

Authors: Huang, XM Taishi, T Yonenaga, I Hoshikawa, K

Citation: Xm. Huang et al., Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration, J CRYST GR, 213(3-4), 2000, pp. 283-287

Heavily boron-doped silicon single crystal growth: Boron segregation

Authors: Taishi, T Huang, XM Kubota, M Kajigaya, T Fukami, T Hoshikawa, K

Citation: T. Taishi et al., Heavily boron-doped silicon single crystal growth: Boron segregation, JPN J A P 2, 38(3A), 1999, pp. L223-L225

Dislocation-free Czochralski silicon crystal growth without the dislocation-elimination-necking process

Authors: Hoshikawa, K Huang, XM Taishi, T Kajigaya, T Iino, T

Citation: K. Hoshikawa et al., Dislocation-free Czochralski silicon crystal growth without the dislocation-elimination-necking process, JPN J A P 2, 38(12A), 1999, pp. L1369-L1371

Risultati: 1-11 |