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Results: 1-25/39
Authors:
Masuda, H
Yasui, K
Sakamoto, Y
Nakao, M
Tamamura, T
Nishio, K
Citation: H. Masuda et al., Ideally ordered anodic porous alumina mask prepared by imprinting of vacuum-evaporated Al on Si, JPN J A P 2, 40(11B), 2001, pp. L1267-L1269
Authors:
Tamamura, T
Wada, K
Takara, K
Ishikawa, N
Iwabuchi, K
Nakasone, Y
Chinen, I
Citation: T. Tamamura et al., Analysis of volatile compounds in Awamori using solid phase extraction, J JPN SOC F, 48(3), 2001, pp. 202-209
Authors:
Masuda, H
Yasui, K
Watanabe, M
Nishio, K
Nakao, M
Tamamura, T
Rao, TN
Fujishima, A
Citation: H. Masuda et al., Fabrication of through-hole diamond membranes by plasma etching using anodic porous alumina mask, EL SOLID ST, 4(11), 2001, pp. G101-G103
Fabrication of ideally ordered anodic porous alumina with 63 nm hole periodicity using sulfuric acid
Authors:
Asoh, H
Nishio, K
Nakao, M
Yokoo, A
Tamamura, T
Masuda, H
Citation: H. Asoh et al., Fabrication of ideally ordered anodic porous alumina with 63 nm hole periodicity using sulfuric acid, J VAC SCI B, 19(2), 2001, pp. 569-572
Authors:
Masuda, H
Asoh, H
Watanabe, M
Nishio, K
Nakao, M
Tamamura, T
Citation: H. Masuda et al., Square and triangular nanohole array architectures in anodic alumina, ADVAN MATER, 13(3), 2001, pp. 189-192
Authors:
Asoh, H
Nishio, K
Nakao, M
Tamamura, T
Masuda, H
Citation: H. Asoh et al., Conditions for fabrication of ideally ordered anodic porous alumina using pretextured Al, J ELCHEM SO, 148(4), 2001, pp. B152-B156
Authors:
Masuda, H
Yotsuya, M
Asano, M
Nishio, K
Nakao, M
Yokoo, A
Tamamura, T
Citation: H. Masuda et al., Self-repair of ordered pattern of nanometer dimensions based on self-compensation properties of anodic porous alumina, APPL PHYS L, 78(6), 2001, pp. 826-828
Authors:
Notomi, M
Suzuki, H
Tamamura, T
Citation: M. Notomi et al., Directional lasing oscillation of two-dimensional organic photonic crystallasers at several photonic band gaps, APPL PHYS L, 78(10), 2001, pp. 1325-1327
Authors:
Saitoh, T
Sogawa, T
Notomi, M
Tamamura, T
Kodama, S
Furuta, T
Ando, H
Citation: T. Saitoh et al., GaAs photonic crystals on SiO2 fabricated by very-high-frequency anode-coupled reactive ion etching and wafer bonding, JPN J A P 1, 39(11), 2000, pp. 6259-6263
Authors:
Masuda, H
Yasui, K
Yanagishita, T
Nakao, M
Tamamura, T
Nishio, K
Citation: H. Masuda et al., Direct nanomolding of semiconductor single crystals, JPN J A P 2, 39(3AB), 2000, pp. L256-L258
Authors:
Masuda, H
Ohya, M
Nishio, K
Asoh, H
Nakao, M
Nohtomi, M
Yokoo, A
Tamamura, T
Citation: H. Masuda et al., Photonic band gap in anodic porous alumina with extremely high aspect ratio formed in phosphoric acid solution, JPN J A P 2, 39(10B), 2000, pp. L1039-L1041
Authors:
Ishii, T
Tamamura, T
Shigehara, K
Citation: T. Ishii et al., Fullerene-derivative nanocomposite resist for nanometer pattern fabrication, JPN J A P 2, 39(10B), 2000, pp. L1068-L1070
Authors:
Notomi, M
Tamamura, T
Ohtera, Y
Hanaizumi, O
Kawakami, S
Citation: M. Notomi et al., Direct visualization of photonic band structure for three-dimensional photonic crystals, PHYS REV B, 61(11), 2000, pp. 7165-7168
Authors:
Kuramochi, E
Notomi, M
Tamamura, T
Kawashima, T
Kawakami, S
Takahashi, J
Takahashi, C
Citation: E. Kuramochi et al., Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap, J VAC SCI B, 18(6), 2000, pp. 3510-3513
Authors:
Kimura, S
Tamamura, T
Nakagawa, I
Koga, T
Fujiwara, T
Hamada, S
Citation: S. Kimura et al., CD14-dependent and independent pathways in lipopolysaccharide-induced activation of a murine B-cell line, CH12.LX, SC J IMMUN, 51(4), 2000, pp. 392-399
Authors:
Yoshikawa, H
Andoh, Y
Yamamoto, M
Fukuzawa, K
Tamamura, T
Ohkubo, T
Citation: H. Yoshikawa et al., 7.5-MHz data-transfer rate with a planar aperture mounted upon a near-field optical slider, OPTICS LETT, 25(1), 2000, pp. 67-69
Authors:
Kamada, H
Takagahara, T
Ando, H
Temmyo, J
Tamamura, T
Citation: H. Kamada et al., Optically self-induced transparency of exciton excitation in a single semiconductor quantum dot, PHYS ST S-A, 178(1), 2000, pp. 291-296
Authors:
Kamada, H
Ando, H
Takagahara, T
Temmyo, J
Tamamura, T
Citation: H. Kamada et al., Spectroscopies of exciton and biexciton in InGaAs quantum disk, J LUMINESC, 87-9, 2000, pp. 46-50
Authors:
Xu, D
Suemitsu, T
Osaka, J
Umeda, Y
Yamane, Y
Ishii, Y
Ishii, T
Tamamura, T
Citation: D. Xu et al., Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: An electrochemical fabrication technology, IEEE DEVICE, 47(1), 2000, pp. 33-43
Authors:
Notomi, M
Tamamura, T
Kawashima, T
Kawakami, S
Citation: M. Notomi et al., Drilled alternating-layer three-dimensional photonic crystals having a full photonic band gap, APPL PHYS L, 77(26), 2000, pp. 4256-4258
Authors:
Nakao, M
Oku, S
Tamamura, T
Yasui, K
Masuda, H
Citation: M. Nakao et al., GaAs and InP nanohole arrays fabricated by reactive beam etching using highly ordered alumina membranes, JPN J A P 1, 38(2B), 1999, pp. 1052-1055
Authors:
Oku, S
Kondo, S
Noguchi, Y
Hirono, T
Nakao, M
Tamamura, T
Citation: S. Oku et al., Surface-grating distributed Bragg reflector lasers with deeply etched grooves formed by reactive beam etching, JPN J A P 1, 38(2B), 1999, pp. 1256-1260
Authors:
Yokoo, A
Nakao, M
Yoshikawa, H
Masuda, H
Tamamura, T
Citation: A. Yokoo et al., 63-nm-pitch pit pattern fabricated on polycarbonate surface by direct nanoprinting, JPN J A P 1, 38(12B), 1999, pp. 7268-7271
Authors:
Suemitsu, T
Ishii, T
Yokoyama, H
Enoki, T
Ishii, Y
Tamamura, T
Citation: T. Suemitsu et al., 30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency, JPN J A P 2, 38(2B), 1999, pp. L154-L156
Authors:
Masuda, H
Ohya, M
Asoh, H
Nakao, M
Nohtomi, M
Tamamura, T
Citation: H. Masuda et al., Photonic crystal using anodic porous alumina, JPN J A P 2, 38(12A), 1999, pp. L1403-L1405