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Results:
1-11
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Results: 11
Authors:
Brandt, O
Muralidharan, R
Thamm, A
Waltereit, P
Ploog, KH
Citation: O. Brandt et al., Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular beam epitaxy, APPL SURF S, 175, 2001, pp. 419-427
Authors:
Behn, U
Thamm, A
Brandt, O
Grahn, HT
Citation: U. Behn et al., Optimization of the signal-to-noise ratio for photoreflectance spectroscopy, J APPL PHYS, 90(10), 2001, pp. 5081-5085
Authors:
Ploog, KH
Brandt, O
Muralidharan, R
Thamm, A
Waltereit, P
Citation: Kh. Ploog et al., Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001)by both plasma-assisted and reactive molecular beam epitaxy, J VAC SCI B, 18(4), 2000, pp. 2290-2294
Authors:
Walther, C
Blum, RP
Niehus, H
Thamm, A
Masselink, WT
Citation: C. Walther et al., Modified Fermi-level pinning of the (100) GaAs surface through InAs quantum dots in different stages of overgrowth, J ELEC MAT, 29(5), 2000, pp. 504-509
Authors:
Thamm, A
Brandt, O
Ringling, J
Trampert, A
Ploog, KH
Mayrock, O
Wunsche, HJ
Henneberger, F
Citation: A. Thamm et al., Optical properties of heavily doped GaN/(Al,Ga)N multiple quantum wells grown on 6H-SiC(0001) by reactive molecular-beam epitaxy, PHYS REV B, 61(23), 2000, pp. 16025-16028
Authors:
Thamm, A
Brandt, O
Trampert, A
Ploog, KH
Citation: A. Thamm et al., Morphology of GaN surfaces and GaN/(Al,Ga)N interfaces grown on 6H-SiC(0001) by reactive molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 73-79
Authors:
Behn, U
Thamm, A
Brandt, O
Grahn, HT
Citation: U. Behn et al., Temperature dependence of the photoreflectance lineshape for GaN films grown by molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 381-386
Authors:
Behn, U
Thamm, A
Brandt, O
Grahn, HT
Citation: U. Behn et al., Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy, J APPL PHYS, 87(9), 2000, pp. 4315-4318
Authors:
Walther, C
Blum, RP
Niehus, H
Masselink, WT
Thamm, A
Citation: C. Walther et al., Modification of the Fermi-level pinning of GaAs surfaces through InAs quantum dots, PHYS REV B, 60(20), 1999, pp. R13962-R13965
Authors:
Thamm, A
Brandt, O
Takemura, Y
Trampert, A
Ploog, KH
Citation: A. Thamm et al., Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001), APPL PHYS L, 75(7), 1999, pp. 944-946
Authors:
Brandt, O
Muralidharan, R
Waltereit, P
Thamm, A
Trampert, A
von Kiedrowski, H
Ploog, KH
Citation: O. Brandt et al., Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy, APPL PHYS L, 75(25), 1999, pp. 4019-4021
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