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Results:
1-15
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Results: 15
Authors:
Boudrissa, M
Delos, E
Wallaert, X
Theron, D
De Jaeger, JC
Citation: M. Boudrissa et al., A 0.15-mu m 60-GHz high-power composite channel GaInAs/ZnP HEMT with low gate current, IEEE ELEC D, 22(6), 2001, pp. 257-259
Authors:
Daumiller, I
Theron, D
Gaquiere, C
Vescan, A
Dietrich, R
Wieszt, A
Leier, H
Vetury, R
Mishra, UK
Smorchkova, IP
Keller, S
Nguyen, NX
Nguyen, C
Kohn, E
Citation: I. Daumiller et al., Current instabilities in GaN-based devices, IEEE ELEC D, 22(2), 2001, pp. 62-64
Authors:
Rothnie, A
Theron, D
Soceneantu, L
Martin, C
Traikia, M
Berridge, G
Higgins, CF
Devaux, PF
Callaghan, R
Citation: A. Rothnie et al., The importance of cholesterol in maintenance of P-glycoprotein activity and its membrane perturbing influence, EUR BIOPHYS, 30(6), 2001, pp. 430-442
Authors:
Boudrissa, M
Delos, E
Gaquiere, C
Rousseau, M
Cordier, Y
Theron, D
De Jaeger, JC
Citation: M. Boudrissa et al., Enhancement-mode Al0.66In0.34As/Ga0.67In0.33As metamorphic HEMT: Modeling and measurements, IEEE DEVICE, 48(6), 2001, pp. 1037-1044
Authors:
Combes, A
Peytavin, G
Theron, D
Citation: A. Combes et al., Conduction disturbances associated with venlafaxine, ANN INT MED, 134(2), 2001, pp. 166-167
Authors:
Boudrissa, M
Delos, E
Cordier, Y
Theron, D
De Jaeger, JC
Citation: M. Boudrissa et al., Enhancement mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate with high breakdown voltage, IEEE ELEC D, 21(11), 2000, pp. 512-514
Authors:
Boudart, B
Trassaert, S
Wallart, X
Pesant, JC
Yaradou, O
Theron, D
Crosnier, Y
Lahreche, H
Omnes, F
Citation: B. Boudart et al., Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN, J ELEC MAT, 29(5), 2000, pp. 603-606
Authors:
Zaknoune, M
Cordier, Y
Bollaert, S
Ferre, D
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs, SOL ST ELEC, 44(9), 2000, pp. 1685-1688
Authors:
Bollaert, S
Cordier, Y
Zaknoune, M
Happy, H
Hoel, V
Lepilliet, S
Theron, D
Cappy, A
Citation: S. Bollaert et al., The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter, SOL ST ELEC, 44(6), 2000, pp. 1021-1027
Authors:
Zaknoune, M
Schuler, O
Piotrowicz, S
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy, IEEE MICR G, 9(1), 1999, pp. 28-30
Authors:
Zaknoune, M
Schuler, O
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances, ELECTR LETT, 35(6), 1999, pp. 501-502
Authors:
Zaknoune, M
Schuler, O
Mollot, F
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m (Al0.5Ga0.5)(0.5)In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy, ELECTR LETT, 35(20), 1999, pp. 1776-1777
Authors:
Zaknoune, M
Cordier, Y
Bollaert, S
Ferre, D
Theron, D
Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer, ELECTR LETT, 35(19), 1999, pp. 1670-1671
Authors:
Gaquiere, C
Bollaert, S
Zaknoune, M
Cordier, Y
Theron, D
Crosnier, Y
Citation: C. Gaquiere et al., Influence on power performances at 60GHz of indium composition in metamorphic HEMTs, ELECTR LETT, 35(17), 1999, pp. 1489-1491
Authors:
Trassaert, S
Boudart, B
Gaquiere, C
Theron, D
Crosnier, Y
Huet, F
Poisson, MA
Citation: S. Trassaert et al., Trap effects studies in GaN MESFETs by pulsed measurements, ELECTR LETT, 35(16), 1999, pp. 1386-1388
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