Authors: Tseng, HH Veteran, J Tobin, PJ Mogab, J Tsui, PGY Wang, V Khare, M Wang, XW Ma, TP Hobbs, C Hegde, R Hartig, M Kenig, G Blumenthal, R Cotton, R Kaushik, V Tamagawa, T Halpern, BL Cui, GJ Schmitt, JJ

Citation: Hh. Tseng et al., Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration, MAT SC S PR, 3(3), 2000, pp. 173-178

Authors: Samavedam, SB Dip, A Phillips, AM Tobin, PJ Mihopolous, T Taylor, WJ Adetutu, O

Citation: Sb. Samavedam et al., Elevated source drain devices using silicon selective epitaxial growth, J VAC SCI B, 18(3), 2000, pp. 1244-1250

Authors: Samavedam, SB Taylor, WJ Grant, JM Smith, JA Tobin, PJ Dip, A Phillips, AM Liu, R

Citation: Sb. Samavedam et al., Relaxation of strained Si layers grown on SiGe buffers, J VAC SCI B, 17(4), 1999, pp. 1424-1429

Authors: Maiti, B Tobin, PJ Hegde, RI Ajuria, SA Chang, KT Paulson, W

Citation: B. Maiti et al., The effect of preoxide quality of furnace-grown N2O oxynitride on charge-to-breakdown and Program/Erase endurance in EEPROM, EL SOLID ST, 1(3), 1998, pp. 147-149