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Results: 1-25/27
Authors:
Ue, M
Takehara, M
Oura, Y
Toriumi, A
Takeda, M
Citation: M. Ue et al., High sensitive detection of impurities in nonaqueous electrolyte solutionsby a rotating disk electrode, ELECTROCH, 69(6), 2001, pp. 458-461
Authors:
Koga, J
Toriumi, A
Citation: J. Koga et A. Toriumi, Silicon planar Esaki diode operating at room temperature, IEICE TR EL, E84C(8), 2001, pp. 1051-1055
Authors:
Uchida, K
Koga, J
Ohba, R
Toriumi, A
Citation: K. Uchida et al., Power consumption of hybrid circuits of single-electron transistors and complementary metal-oxide-semiconductor field-effect transistors, IEICE TR EL, E84C(8), 2001, pp. 1066-1070
Authors:
Noguchi, M
Numata, T
Mitani, Y
Shino, T
Kawanaka, S
Oowaki, Y
Toriumi, A
Citation: M. Noguchi et al., Back gate effects on threshold voltage sensitivity to SOI thickness in fully-depleted SOI MOSFETs, IEEE ELEC D, 22(1), 2001, pp. 32-34
Authors:
Oh, JH
Nakamura, K
Ono, K
Oshima, M
Hirashita, N
Niwa, M
Toriumi, A
Kakizaki, A
Citation: Jh. Oh et al., Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy, J ELEC SPEC, 114, 2001, pp. 395-399
Authors:
Oh, JH
Yeom, HW
Hagimoto, Y
Ono, K
Oshima, M
Hirashita, N
Nywa, M
Toriumi, A
Kakizaki, A
Citation: Jh. Oh et al., Chemical structure of the ultrathin SiO2/Si(100) interface: An angle-resolved Si 2p photoemission study - art. no. 205310, PHYS REV B, 6320(20), 2001, pp. 5310
Authors:
Uchida, K
Koga, J
Ohba, R
Takagi, S
Toriumi, A
Citation: K. Uchida et al., Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film, J APPL PHYS, 90(7), 2001, pp. 3551-3557
Authors:
Gu, M
Amistoso, JO
Toriumi, A
Irie, M
Kawata, S
Citation: M. Gu et al., Effect of saturable response to two-photon absorption on the readout signal level of three-dimensional bit optical data storage in a photochromic polymer, APPL PHYS L, 79(2), 2001, pp. 148-150
Authors:
Koga, J
Vanderstraeten, C
Takagi, S
Toriumi, A
Citation: J. Koga et al., New approach to negative differential conductance with high peak-to-valleyratio in silicon, JPN J A P 1, 39(4B), 2000, pp. 2246-2250
Authors:
Uchida, K
Matsuzawa, K
Koga, J
Ohba, R
Takagi, S
Toriumi, A
Citation: K. Uchida et al., Analytical single-electron transistor (SET) model for design and analysis of realistic SET circuits, JPN J A P 1, 39(4B), 2000, pp. 2321-2324
Authors:
Ohba, R
Sugiyama, N
Koga, J
Uchida, K
Toriumi, A
Citation: R. Ohba et al., Influence of channel depletion on the carrier charging characteristics in Si nanocrystal floating gate memory, JPN J A P 1, 39(3A), 2000, pp. 989-993
Authors:
Mitani, Y
Satake, H
Ito, H
Toriumi, A
Citation: Y. Mitani et al., A study of the effect of deuterium on stress-induced leakage current, JPN J A P 2, 39(6B), 2000, pp. L564-L566
Authors:
Mizuno, T
Takagi, S
Sugiyama, N
Satake, H
Kurobe, A
Toriumi, A
Citation: T. Mizuno et al., Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology, IEEE ELEC D, 21(5), 2000, pp. 230-232
Authors:
Satake, H
Toriumi, A
Citation: H. Satake et A. Toriumi, SiO2 dielectric breakdown mechanism studied by the post-breakdown resistance statistics, SEMIC SCI T, 15(5), 2000, pp. 471-477
Authors:
Takagi, S
Takayanagi, M
Toriumi, A
Citation: S. Takagi et al., Impact of electron and hole inversion-layer capacitance on low voltage operation of scaled n- and p-MOSFET's, IEEE DEVICE, 47(5), 2000, pp. 999-1005
Authors:
Satake, H
Toriumi, A
Citation: H. Satake et A. Toriumi, Dielectric breakdown mechanism of thin-SiO2 studied by the post-breakdown resistance statistics, IEEE DEVICE, 47(4), 2000, pp. 741-745
Authors:
Uchida, K
Matsuzawa, K
Koga, J
Takagi, S
Toriumi, A
Citation: K. Uchida et al., Enhancement of hot-electron generation rate in Schottky source metal-oxide-semiconductor field-effect transistors, APPL PHYS L, 76(26), 2000, pp. 3992-3994
Authors:
Uchida, K
Matsuzawa, K
Toriumi, A
Citation: K. Uchida et al., A new design scheme for logic circuits with single electron transistors, JPN J A P 1, 38(7A), 1999, pp. 4027-4032
Authors:
Ohata, A
Toriumi, A
Citation: A. Ohata et A. Toriumi, Merits and demerits of single electron effects in ultrasmall semiconductordevices, JPN J A P 1, 38(4B), 1999, pp. 2473-2476
Authors:
Uchida, K
Koga, J
Ohata, A
Toriumi, A
Citation: K. Uchida et al., Silicon single-electron tunnelling device interfaced with a CMOS inverter, NANOTECHNOL, 10(2), 1999, pp. 198-200
Authors:
Toriumi, A
Uchida, K
Ohba, R
Koga, J
Citation: A. Toriumi et al., Challenge and prospects for silicon SET/FET hybrid circuits, PHYSICA B, 272(1-4), 1999, pp. 522-526
Authors:
Koga, J
Toriumi, A
Citation: J. Koga et A. Toriumi, Three-terminal silicon surface junction tunneling device for room temperature operation, IEEE ELEC D, 20(10), 1999, pp. 529-531
Authors:
Itoh, H
Nagamine, M
Satake, H
Toriumi, A
Citation: H. Itoh et al., A study of atomically-flat SiO2/Si interface formation mechanism, based onthe radical oxidation kinetics, MICROEL ENG, 48(1-4), 1999, pp. 71-74
Authors:
Takagi, S
Takayanagi, M
Toriumi, A
Citation: S. Takagi et al., Characterization of inversion-layer capacitance of holes in Si MOSFET's, IEEE DEVICE, 46(7), 1999, pp. 1446-1450
Authors:
Takagi, S
Yasuda, N
Toriumi, A
Citation: S. Takagi et al., Experimental evidence of inelastic tunneling in stress-induced leakage current, IEEE DEVICE, 46(2), 1999, pp. 335-341