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Results:
1-9
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Results: 9
Authors:
Tan, CH
David, JPR
Rees, GJ
Tozer, RC
Herbert, DC
Citation: Ch. Tan et al., Treatment of soft threshold in impact ionization, J APPL PHYS, 90(5), 2001, pp. 2538-2543
Authors:
Tan, CH
David, JPR
Plimmer, SA
Rees, GJ
Tozer, RC
Grey, R
Citation: Ch. Tan et al., Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes, IEEE DEVICE, 48(7), 2001, pp. 1310-1317
Authors:
Ng, BK
David, JPR
Plimmer, SA
Rees, GJ
Tozer, RC
Hopkinson, M
Hill, G
Citation: Bk. Ng et al., Avalanche multiplication characteristics of Al0.8Ga0.2As diodes, IEEE DEVICE, 48(10), 2001, pp. 2198-2204
Authors:
Devonshire, R
Healey, TJ
Stone, DA
Tozer, RC
Citation: R. Devonshire et al., Relative enhancement of near-UV emission from a low-pressure mercury-rare-gas discharge lamp, for an LCD backlighting application, MEAS SCI T, 11(5), 2000, pp. 547-553
Authors:
Li, KF
Ong, DS
David, JPR
Tozer, RC
Rees, GJ
Plimmer, SA
Chang, KY
Roberts, JS
Citation: Kf. Li et al., Avalanche noise characteristics of thin GaAs structures with distributed carrier generation, IEEE DEVICE, 47(5), 2000, pp. 910-914
Authors:
Ng, BK
David, JPR
Plimmer, SA
Hopkinson, M
Tozer, RC
Rees, GJ
Citation: Bk. Ng et al., Impact ionization coefficients of Al0.8Ga0.2As, APPL PHYS L, 77(26), 2000, pp. 4374-4376
Authors:
Tan, CH
Clark, JC
David, JPR
Rees, GJ
Plimmer, SA
Tozer, RC
Herbert, DC
Robbins, DJ
Leong, WY
Newey, J
Citation: Ch. Tan et al., Avalanche noise measurement in thin Si p(+)-i-n(+) diodes, APPL PHYS L, 76(26), 2000, pp. 3926-3928
Authors:
Li, KF
Ong, DS
David, JPR
Tozer, RC
Rees, GJ
Robson, PN
Grey, R
Citation: Kf. Li et al., Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors, IEE P-OPTO, 146(1), 1999, pp. 21-24
Authors:
Li, KF
Plimmer, SA
David, JPR
Tozer, RC
Rees, GJ
Robson, PN
Button, CC
Clark, JC
Citation: Kf. Li et al., Low avalanche noise characteristics in thin InP p(+)-i-n(+) diodes with electron initiated multiplication, IEEE PHOTON, 11(3), 1999, pp. 364-366
Risultati:
1-9
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