Citation: Wt. Tseng et al., Novel polymeric surfactants for improving chemical mechanical polishing performance of silicon oxide, EL SOLID ST, 4(5), 2001, pp. G42-G45
Citation: Wt. Tseng et al., Electroless deposition of Cu thin films with CuCl2-HNO3 based chemistry - I. Chemical formulation and reaction mechanisms, J ELCHEM SO, 148(5), 2001, pp. C327-C332
Citation: Wt. Tseng et al., Electroless deposition of Cu thin films with CuCl2-HNO3 based chemistry - II. Kinetics and microstructure, J ELCHEM SO, 148(5), 2001, pp. C333-C338
Citation: Wt. Tseng et al., Microstructure-related resistivity change after chemical-mechanical polishof Al and W thin films, THIN SOL FI, 370(1-2), 2000, pp. 96-100
Citation: Cf. Lin et al., Formation and characteristics of silicon nanocrystals in plasma-enhanced chemical-vapor-deposited silicon-rich oxide, J APPL PHYS, 87(6), 2000, pp. 2808-2815
Citation: Cf. Lin et al., Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors, J VAC SCI B, 17(4), 1999, pp. 1456-1463
Citation: Cf. Lin et al., A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization, THIN SOL FI, 347(1-2), 1999, pp. 248-252
Citation: Wt. Tseng et al., A comparative study on the roles of velocity in the material removal rate during chemical mechanical polishing, J ELCHEM SO, 146(5), 1999, pp. 1952-1959
Citation: Cf. Lin et al., Process optimization and integration for silicon oxide intermetal dielectric planarized by chemical mechanical polish, J ELCHEM SO, 146(5), 1999, pp. 1984-1990
Citation: Cf. Lin et al., Optimization of multilayer thin film passivation processes for improving cache memory device performance, J ELCHEM SO, 146(4), 1999, pp. 1510-1516
Citation: Cf. Lin et al., Process optimization of plasma-enhanced chemical vapor deposited passivation thin films for improving nonvolatile memory IC performance, JPN J A P 1, 37(12A), 1998, pp. 6364-6368