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Citation: G. Brezeanu et al., Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage, IEEE DEVICE, 48(9), 2001, pp. 2148-2153

Authors: Brezeanu, G Badila, M Tudor, B Godignon, P Millan, J Locatelli, ML Chante, JP Lebedev, A Savkina, NS

Citation: G. Brezeanu et al., Electrical characteristics modeling of large area boron compensated 6H-SiCpn structures, SOL ST ELEC, 44(4), 2000, pp. 571-579

Authors: Badila, M Chante, JP Locatelli, ML Millan, J Godignon, P Brezeanu, G Tudor, B Lebedev, A

Citation: M. Badila et al., Temperature behavior of the 6H-SiC pn diodes, DIAM RELAT, 8(2-5), 1999, pp. 341-345

Authors: Brezeanu, G Badila, M Tudor, B Millan, J Godignon, P Chante, JP Locatelli, ML Lebedev, A Banu, V

Citation: G. Brezeanu et al., On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction, MAT SCI E B, 61-2, 1999, pp. 429-432

Authors: Badila, M Tudor, B Brezeanu, G Locatelli, ML Chante, JP Millan, J Godignon, P Lebedev, A Banu, V

Citation: M. Badila et al., Current-voltage characteristics of large area 6H-SiC pin diodes, MAT SCI E B, 61-2, 1999, pp. 433-436