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Results: 1-14 |
Results: 14
Microscopic characterization of InAs/In0.28GaSb0.72/InAs/AlSb laser structure interfaces - art. no. 245311
Authors: Barvosa-Carter, W Twigg, ME Yang, MJ Whitman, LJ
Citation: W. Barvosa-carter et al., Microscopic characterization of InAs/In0.28GaSb0.72/InAs/AlSb laser structure interfaces - art. no. 245311, PHYS REV B, 6324(24), 2001, pp. 5311
GaN decomposition in H-2 and N-2 at MOVPE temperatures and pressures
Authors: Koleske, DD Wickenden, AE Henry, RL Culbertson, JC Twigg, ME
Citation: Dd. Koleske et al., GaN decomposition in H-2 and N-2 at MOVPE temperatures and pressures, J CRYST GR, 223(4), 2001, pp. 466-483
Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides
Authors: Hobart, KD Kub, FJ Fatemi, M Twigg, ME Thompson, PE Kuan, TS Inoki, CK
Citation: Kd. Hobart et al., Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides, J ELEC MAT, 29(7), 2000, pp. 897-900
The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys
Authors: Wickenden, AE Koleske, DD Henry, RL Gorman, RJ Twigg, ME Fatemi, M Freitas, JA Moore, WJ
Citation: Ae. Wickenden et al., The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys, J ELEC MAT, 29(1), 2000, pp. 21-26
Epitaxial Si-based tunnel diodes
Authors: Thompson, PE Hobart, KD Twigg, ME Rommel, SL Jin, N Berger, PR Lake, R Seabaugh, AC Chi, P
Citation: Pe. Thompson et al., Epitaxial Si-based tunnel diodes, THIN SOL FI, 380(1-2), 2000, pp. 145-150
Composition and morphology of SiGe alloys grown on Si(100) using an Sb surfactant
Authors: Jernigan, GG Silvestre, CL Fatemi, M Twigg, ME Thompson, PE
Citation: Gg. Jernigan et al., Composition and morphology of SiGe alloys grown on Si(100) using an Sb surfactant, J CRYST GR, 213(3-4), 2000, pp. 299-307
Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation
Authors: Boos, JB Bennett, BR Kruppa, W Park, D Mittereder, J Bass, R Twigg, ME
Citation: Jb. Boos et al., Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation, J VAC SCI B, 17(3), 1999, pp. 1022-1027
The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films
Authors: Wickenden, AE Koleske, DD Henry, RL Gorman, RJ Culbertson, JC Twigg, ME
Citation: Ae. Wickenden et al., The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films, J ELEC MAT, 28(3), 1999, pp. 301-307
Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures
Authors: Bennett, BR Shanabrook, BV Twigg, ME
Citation: Br. Bennett et al., Anion control in molecular beam epitaxy of mixed As/Sb III-V heterostructures, J APPL PHYS, 85(4), 1999, pp. 2157-2161
Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
Authors: Thompson, PE Hobart, KD Twigg, ME Jernigan, GG Dillon, TE Rommel, SL Berger, PR Simons, DS Chi, PH Lake, R Seabaugh, AC
Citation: Pe. Thompson et al., Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy, APPL PHYS L, 75(9), 1999, pp. 1308-1310
Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire
Authors: Twigg, ME Henry, RL Wickenden, AE Koleske, DD Culbertson, JC
Citation: Me. Twigg et al., Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire, APPL PHYS L, 75(5), 1999, pp. 686-688
Properties of Si-doped GaN films grown using multiple AlN interlayers
Authors: Koleske, DD Twigg, ME Wickenden, AE Henry, RL Gorman, RJ Freitas, JA Fatemi, M
Citation: Dd. Koleske et al., Properties of Si-doped GaN films grown using multiple AlN interlayers, APPL PHYS L, 75(20), 1999, pp. 3141-3143
Enhanced GaN decomposition in H-2 near atmospheric pressures (vol 73, pg 2018, 1998)
Authors: Koleske, DD Wickenden, AE Henry, RL Twigg, ME Culbertson, JC Gorman, RJ
Citation: Dd. Koleske et al., Enhanced GaN decomposition in H-2 near atmospheric pressures (vol 73, pg 2018, 1998), APPL PHYS L, 75(11), 1999, pp. 1646-1646
Enhancement of electrical and structural properties of GaN layers grown onvicinal-cut, a-plane sapphire substrates
Authors: Fatemi, M Wickenden, AE Koleske, DD Twigg, ME Freitas, JA Henry, RL Gorman, RJ
Citation: M. Fatemi et al., Enhancement of electrical and structural properties of GaN layers grown onvicinal-cut, a-plane sapphire substrates, APPL PHYS L, 73(5), 1999, pp. 608-610
Risultati: 1-14 |