Authors:
Lysenko, VS
Nazarov, AN
Kilchytska, VI
Osiyuk, IN
Tyagulski, IP
Gomeniuk, YV
Barchuk, IP
Citation: Vs. Lysenko et al., Thermally activated processes in the buried oxide of SIMOX SOI structures and devices, SOL ST ELEC, 45(4), 2001, pp. 575-584
Authors:
Olafsson, HO
Sveinbjornsson, EO
Rudenko, TE
Tyagulski, IP
Osiyuk, IN
Lysenko, VS
Citation: Ho. Olafsson et al., Border traps in 6H-SiC metal-oxide-semiconductor capacitors investigated by the thermally-stimulated current technique, APPL PHYS L, 79(24), 2001, pp. 4034-4036
Authors:
Lysenko, VS
Tyagulski, IP
Gomeniuk, YV
Osiyuk, IN
Citation: Vs. Lysenko et al., Effect of oxide-semiconductor interface traps on low-temperature operationof MOSFETs, MICROEL REL, 40(4-5), 2000, pp. 735-738
Authors:
Lysenko, VS
Tyagulski, IP
Gomeniuk, YV
Osiyuk, IN
Citation: Vs. Lysenko et al., Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors, MICROEL REL, 40(4-5), 2000, pp. 799-802