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Results: 76-100/115
Authors:
UCHIDA H
SOGA T
NISHIKAWA H
JIMBO T
UMENO M
Citation: H. Uchida et al., REDUCTION OF DISLOCATION DENSITY BY THERMAL ANNEALING FOR GAAS GASB/SI HETEROSTRUCTURE/, Journal of crystal growth, 150(1-4), 1995, pp. 681-684
Authors:
FUJITA K
NITATORI K
HOSODA M
EGAWA T
NIWANO Y
JIMBO T
UMENO M
WATANABE T
Citation: K. Fujita et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF ALGAAS P-N-JUNCTIONS ON GAAS(111)ASUBSTRATES USING ONLY SILICON DOPANT, Journal of crystal growth, 146(1-4), 1995, pp. 384-388
Authors:
SOGA T
JIMBO T
UMENO M
Citation: T. Soga et al., GROWTH AND CHARACTERIZATION OF 2-DIMENSIONAL GAP ON SI BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 146(1-4), 1995, pp. 554-557
Authors:
SOGA T
KATO T
YANG M
UMENO M
JIMBO T
Citation: T. Soga et al., HIGH-EFFICIENCY ALGAAS SI MONOLITHIC TANDEM SOLAR-CELL GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 78(6), 1995, pp. 4196-4199
Authors:
EGAWA T
JIMBO T
UMENO M
Citation: T. Egawa et al., STRUCTURE OF ALAS GAAS DISTRIBUTED-BRAGG-REFLECTOR GROWN ON SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 77(8), 1995, pp. 3836-3838
Authors:
EGAWA T
JIMBO T
DONG J
MATSUMOTO K
UMENO M
Citation: T. Egawa et al., 2000 H STABLE OPERATION IN 0.87 MU-M LIGHT-EMITTING DIODE USING STRESS-FREE INGAP GAAS/SI/, Applied physics letters, 67(24), 1995, pp. 3605-3607
Authors:
EGAWA T
HASEGAWA Y
JIMBO T
UMENO M
Citation: T. Egawa et al., DEGRADATION MECHANISM OF ALGAAS GAAS LASER-DIODES GROWN ON SI SUBSTRATES/, Applied physics letters, 67(20), 1995, pp. 2995-2997
Authors:
SOGA T
JIMBO T
UMENO M
Citation: T. Soga et al., MINORITY-CARRIER PROPERTIES OF GAAS ON SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 33(3A), 1994, pp. 1494-1498
Authors:
YANG MJ
SOGA T
JIMBO T
UMENO M
Citation: Mj. Yang et al., ALXGA1-XAS SI (X=0-0.22) TANDEM SOLAR-CELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 33(12A), 1994, pp. 6605-6610
Authors:
NISHIKAWA H
SOGA T
JIMBO T
UMENO M
Citation: H. Nishikawa et al., ETCH PIT OBSERVATION OF GAP GROWN ON SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 33(12A), 1994, pp. 6654-6655
Authors:
YANG MJ
SOGA T
EGAWA T
JIMBO T
UMENO M
Citation: Mj. Yang et al., HIGH-EFFICIENCY GAAS SI MONOLITHIC 3-TERMINAL CASCADE SOLAR-CELLS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 2, 33(5B), 1994, pp. 120000712-120000714
Authors:
EGAWA T
HASEGAWA Y
JIMBO T
UMENO M
Citation: T. Egawa et al., ROOM-TEMPERATURE PULSED OPERATION OF ALGAAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODE ON SI SUBSTRATE/, IEEE photonics technology letters, 6(6), 1994, pp. 681-683
CHARACTERIZATION OF SINGLE QUANTUM-WELLS ON GAAS SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors:
EGAWA T
GEORGE T
JIMBO T
UMENO M
Citation: T. Egawa et al., CHARACTERIZATION OF SINGLE QUANTUM-WELLS ON GAAS SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, IEEE photonics technology letters, 6(2), 1994, pp. 150-152
Authors:
KONAGAI M
MATSUNAMI H
UMENO M
HAMAKAWA Y
Citation: M. Konagai et al., PROCEEDINGS OF THE 7TH INTERNATIONAL PHOTOVOLTAIC SCIENCE AND ENGINEERING CONFERENCE, NAGOYA, JAPAN, 22-26-NOVEMBER-1994 .2. - PREFACE, Solar energy materials and solar cells, 35(1-4), 1994, pp. 1-8
Authors:
YANG MJ
SOGA T
EGAWA T
JIMBO T
UMENO M
Citation: Mj. Yang et al., 3-TERMINAL MONOLITHIC CASCADE GAAS SI SOLAR-CELLS/, Solar energy materials and solar cells, 35(1-4), 1994, pp. 45-51
Authors:
SOGA T
UEHIRO M
AZUMA Y
YANG M
JIMBO T
UMENO M
Citation: T. Soga et al., TIME-RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION OF GAAS AND ALGAAS ON SI SUBSTRATE GROWN BY MOCVD, Solar energy materials and solar cells, 35(1-4), 1994, pp. 75-81
Authors:
KONAGAI M
MATSUNAMI H
UMENO M
HAMAKAWA Y
Citation: M. Konagai et al., PROCEEDINGS OF THE 7TH INTERNATIONAL PHOTOVOLTAIC SCIENCE AND ENGINEERING CONFERENCE - NAGOYA, JAPAN, 22-26-NOVEMBER-1994 - PREFACE, Solar energy materials and solar cells, 34(1-4), 1994, pp. 1-8
Authors:
YANG MJ
UMENO M
JIMBO T
SHIMIZU H
SOGA T
EGAWA T
AZUMA Y
Citation: Mj. Yang et al., INTEGRATED WAVELENGTH-DIVISION PHOTOSENSOR USING GAAS ON SI, Sensors and actuators. A, Physical, 40(2), 1994, pp. 121-123
Authors:
SOGA T
JIMBO T
UMENO M
Citation: T. Soga et al., EPITAXIAL-GROWTH OF A 2-DIMENSIONAL STRUCTURE OF GAP ON A SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied surface science, 82-3, 1994, pp. 64-69
Authors:
MORI M
OGAWA E
TAGAWA M
OHMAE N
UMENO M
Citation: M. Mori et al., TEMPERATURE-DEPENDENCE OF THE FIELD-STIMULATED EXOELECTRON EMISSION, Applied surface science, 76(1-4), 1994, pp. 21-25
Authors:
MORITA H
KITA T
UMENO M
MORITA M
YOSHINAGA J
OKAMOTO K
Citation: H. Morita et al., ANALYSIS OF SERUM ELEMENTS AND THE CONTAMINATIONS FROM DEVICES USED FOR SERUM PREPARATION BY INDUCTIVELY-COUPLED PLASMA-MASS SPECTROMETRY, Science of the total environment, 151(1), 1994, pp. 9-17
Authors:
TAKAHASHI I
NAKANO K
HARADA J
SHIMURA T
UMENO M
Citation: I. Takahashi et al., STRUCTURE OF SILICON-OXIDE ON SI(001) GROWN AT LOW-TEMPERATURES, Surface science, 315(3), 1994, pp. 120001021-120001024
Authors:
SOGA T
JIMBO T
UMENO M
Citation: T. Soga et al., HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF III-V COMPOUNDS ON SI GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 145(1-4), 1994, pp. 358-362
Authors:
HASEGAWA Y
EGAWA T
JIMBO T
UMENO M
Citation: Y. Hasegawa et al., VERTICALLY-STACKED GAAS QUANTUM WIRES GROWN ON SI SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 145(1-4), 1994, pp. 728-733
Authors:
SOGA T
INOUE J
JIMBO T
UMENO M
Citation: T. Soga et al., OBSERVATION OF LATTICE-RELAXATION AT THE GAASP GAAS INTERFACE BEYOND THE CRITICAL THICKNESS BY TRANSMISSION ELECTRON-MICROSCOPY/, Journal of applied physics, 75(9), 1994, pp. 4510-4514