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Results: 1-25 | 26-44
Results: 1-25/44
TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT AND THE LASING WAVELENGTH IN 1.3-MU-M GAINNAS GAAS SINGLE-QUANTUM-WELL LASER-DIODE/
Authors: KITATANI T KONDOW M NAKAHARA K LARSON MC UOMI K
Citation: T. Kitatani et al., TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT AND THE LASING WAVELENGTH IN 1.3-MU-M GAINNAS GAAS SINGLE-QUANTUM-WELL LASER-DIODE/, Optical review, 5(2), 1998, pp. 69-71
IMPROVED HIGH-TEMPERATURE CHARACTERISTICS IN A THICKNESS-TAPERED 1.3-MU-M BEAM-EXPANDER INTEGRATED RIDGE-WAVE-GUIDE LASER
Authors: SATO H AOKI M TSUCHIYA T KOMORI M TAIKE A TAKAHASHI M UOMI K TSUJI S
Citation: H. Sato et al., IMPROVED HIGH-TEMPERATURE CHARACTERISTICS IN A THICKNESS-TAPERED 1.3-MU-M BEAM-EXPANDER INTEGRATED RIDGE-WAVE-GUIDE LASER, IEEE photonics technology letters, 10(4), 1998, pp. 484-486
1.3-MU-M CONTINUOUS-WAVE LASING OPERATION IN GAINNAS QUANTUM-WELL LASERS
Authors: NAKAHARA K KONDOW M KITATANI T LARSON MC UOMI K
Citation: K. Nakahara et al., 1.3-MU-M CONTINUOUS-WAVE LASING OPERATION IN GAINNAS QUANTUM-WELL LASERS, IEEE photonics technology letters, 10(4), 1998, pp. 487-488
GAINNAS-GAAS LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES
Authors: LARSON MC KONDOW M KITATANI T NAKAHARA K TAMURA K INOUE H UOMI K
Citation: Mc. Larson et al., GAINNAS-GAAS LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES, IEEE photonics technology letters, 10(2), 1998, pp. 188-190
GAS-SOURCE MBE OF GAINNAS FOR LONG-WAVELENGTH LASER-DIODES
Authors: KONDOW M KITATANI T LARSON MC NAKAHARA K UOMI K INOUE H
Citation: M. Kondow et al., GAS-SOURCE MBE OF GAINNAS FOR LONG-WAVELENGTH LASER-DIODES, Journal of crystal growth, 188(1-4), 1998, pp. 255-259
1GBIT S ZERO-BIAS OPERATION OF 1.3-MU-M INGAASP N-TYPE MODULATION-DOPED STRAINED MULTIQUANTUM-WELL LASERS/
Authors: NAKAHARA K UOMI K TANIWATARI T HAGA T TOYONAKA T
Citation: K. Nakahara et al., 1GBIT S ZERO-BIAS OPERATION OF 1.3-MU-M INGAASP N-TYPE MODULATION-DOPED STRAINED MULTIQUANTUM-WELL LASERS/, Electronics Letters, 34(16), 1998, pp. 1584-1585
RELIABLE WIDE-TEMPERATURE-RANGE OPERATION OF 1.3-MU-M BEAM-EXPANDER INTEGRATED LASER-DIODE FOR PASSIVELY ALIGNED OPTICAL MODULES
Authors: AOKI M KOMORI M SATO H TSUCHIYA T TAIKE A TAKAHASHI M UOMI K TSUJI S
Citation: M. Aoki et al., RELIABLE WIDE-TEMPERATURE-RANGE OPERATION OF 1.3-MU-M BEAM-EXPANDER INTEGRATED LASER-DIODE FOR PASSIVELY ALIGNED OPTICAL MODULES, IEEE journal of selected topics in quantum electronics, 3(6), 1997, pp. 1405-1412
GAINNAS - A NOVEL MATERIAL FOR LONG-WAVELENGTH SEMICONDUCTOR-LASERS
Authors: KONDOW M KITATANI T NAKATSUKA S LARSON MC NAKAHARA K YAZAWA Y OKAI M UOMI K
Citation: M. Kondow et al., GAINNAS - A NOVEL MATERIAL FOR LONG-WAVELENGTH SEMICONDUCTOR-LASERS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 719-730
1.3-MU-M INGAASP-INP N-TYPE MODULATION-DOPED STRAINED MULTI-QUANTUM-WELL LASERS
Authors: NAKAHARA K UOMI K TSUCHIYA T NIWA A HAGA T TANIWATARI T
Citation: K. Nakahara et al., 1.3-MU-M INGAASP-INP N-TYPE MODULATION-DOPED STRAINED MULTI-QUANTUM-WELL LASERS, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 166-172
HIGHLY RELIABLE AND STABLE-LATERAL-MODE OPERATION OF HIGH-POWER 0.98-MU-M INGAAS-INGAASP LASERS WITH AN EXPONENTIAL-SHAPED FLARED STRIPE
Authors: SAGAWA M HIRAMOTO K TOYONAKA T KIKAWA T FUJISAKI S UOMI K
Citation: M. Sagawa et al., HIGHLY RELIABLE AND STABLE-LATERAL-MODE OPERATION OF HIGH-POWER 0.98-MU-M INGAAS-INGAASP LASERS WITH AN EXPONENTIAL-SHAPED FLARED STRIPE, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 666-671
INP-BASED REVERSED-MESA RIDGE-WAVE-GUIDE STRUCTURE FOR HIGH-PERFORMANCE LONG-WAVELENGTH LASER-DIODES
Authors: AOKI M KOMORI M TSUCHIYA T SATO H NAKAHARA K UOMI K
Citation: M. Aoki et al., INP-BASED REVERSED-MESA RIDGE-WAVE-GUIDE STRUCTURE FOR HIGH-PERFORMANCE LONG-WAVELENGTH LASER-DIODES, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 672-683
DIRECT WAFER BONDING TECHNIQUE AIMING FOR FREE-MATERIAL AND FREE-ORIENTATION INTEGRATION OF SEMICONDUCTOR-MATERIALS
Authors: OKUNO Y UOMI K AOKI M TSUCHIYA T
Citation: Y. Okuno et al., DIRECT WAFER BONDING TECHNIQUE AIMING FOR FREE-MATERIAL AND FREE-ORIENTATION INTEGRATION OF SEMICONDUCTOR-MATERIALS, IEICE transactions on electronics, E80C(5), 1997, pp. 682-688
GANAS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: KONDOW M UOMI K NIWA A KITATANI T WATAHIKI S YAZAWA Y HOSOMI K MOZUME T
Citation: M. Kondow et al., GANAS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Solid-state electronics, 41(2), 1997, pp. 209-212
DIRECT WAFER BONDING OF III-V COMPOUND SEMICONDUCTORS FOR FREE-MATERIAL AND FREE-ORIENTATION INTEGRATION
Authors: OKUNO Y UOMI K AOKI M TSUCHIYA T
Citation: Y. Okuno et al., DIRECT WAFER BONDING OF III-V COMPOUND SEMICONDUCTORS FOR FREE-MATERIAL AND FREE-ORIENTATION INTEGRATION, IEEE journal of quantum electronics, 33(6), 1997, pp. 959-969
LASING OPERATION OF INGAASP-BASED INGAAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH A STRAIN-COMPENSATED ACTIVE-REGION/
Authors: SHINODA K HIRAMOTO K SAGAWA M UOMI K
Citation: K. Shinoda et al., LASING OPERATION OF INGAASP-BASED INGAAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH A STRAIN-COMPENSATED ACTIVE-REGION/, JPN J A P 1, 35(9A), 1996, pp. 4660-4663
GAINNAS - A NOVEL MATERIAL FOR LONG-WAVELENGTH-RANGE LASER-DIODES WITH EXCELLENT HIGH-TEMPERATURE PERFORMANCE
Authors: KONDOW M UOMI K NIWA A KITATANI T WATAHIKI S YAZAWA Y
Citation: M. Kondow et al., GAINNAS - A NOVEL MATERIAL FOR LONG-WAVELENGTH-RANGE LASER-DIODES WITH EXCELLENT HIGH-TEMPERATURE PERFORMANCE, JPN J A P 1, 35(2B), 1996, pp. 1273-1275
WIDE-TEMPERATURE-RANGE OPERATION OF 1.3-MU-M BEAM EXPANDER-INTEGRATEDLASER-DIODES GROWN BY INPLANE THICKNESS CONTROL MOVPE USING A SILICONSHADOW MASK
Authors: AOKI M KOMORI M SUZUKI M SATO H TAKAHASHI M OHTOSHI T UOMI K TSUJI S
Citation: M. Aoki et al., WIDE-TEMPERATURE-RANGE OPERATION OF 1.3-MU-M BEAM EXPANDER-INTEGRATEDLASER-DIODES GROWN BY INPLANE THICKNESS CONTROL MOVPE USING A SILICONSHADOW MASK, IEEE photonics technology letters, 8(4), 1996, pp. 479-481
DOPING-TYPE DEPENDENCE OF TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP-INP MODULATION-DOPED STRAINED-QUANTUM-WELL LASERS
Authors: NIWA A OHTOSHI T UOMI K NAKAHARA K
Citation: A. Niwa et al., DOPING-TYPE DEPENDENCE OF TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP-INP MODULATION-DOPED STRAINED-QUANTUM-WELL LASERS, IEEE photonics technology letters, 8(3), 1996, pp. 328-330
REDUCED TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP-INP N-TYPE MODULATION-DOPED STRAINED MULTI-QUANTUM-WELL LASERS WITH A BURIED HETEROSTRUCTURE
Authors: NAKAHARA K UOMI K HAGA T TANIWATARI T OISHI A
Citation: K. Nakahara et al., REDUCED TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP-INP N-TYPE MODULATION-DOPED STRAINED MULTI-QUANTUM-WELL LASERS WITH A BURIED HETEROSTRUCTURE, IEEE photonics technology letters, 8(10), 1996, pp. 1297-1298
EXTREMELY LARGE N-CONTENT (UP TO 10-PERCENT) IN GANAS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: KONDOW M UOMI K KITATANI T WATAHIKI S YAZAWA Y
Citation: M. Kondow et al., EXTREMELY LARGE N-CONTENT (UP TO 10-PERCENT) IN GANAS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 164(1-4), 1996, pp. 175-179
CONTINUOUS-WAVE OPERATION OF LONG-WAVELENGTH GAINNAS GAAS QUANTUM-WELL LASER/
Authors: NAKAHARA K KONDOW K KITATANI T YAZAWA Y UOMI K
Citation: K. Nakahara et al., CONTINUOUS-WAVE OPERATION OF LONG-WAVELENGTH GAINNAS GAAS QUANTUM-WELL LASER/, Electronics Letters, 32(17), 1996, pp. 1585-1586
DEPENDENCE OF THRESHOLD CURRENT-DENSITY, CARRIER LIFETIME AND OPTICALGAIN COEFFICIENT ON DONOR CONCENTRATION IN 1.3-MU-M N-TYPE MODULATION-DOPED STRAINED MULTIQUANTUM-WELL LASERS
Authors: NAKAHARA K UOMI K TSUCHIYA T NIWA A
Citation: K. Nakahara et al., DEPENDENCE OF THRESHOLD CURRENT-DENSITY, CARRIER LIFETIME AND OPTICALGAIN COEFFICIENT ON DONOR CONCENTRATION IN 1.3-MU-M N-TYPE MODULATION-DOPED STRAINED MULTIQUANTUM-WELL LASERS, Electronics Letters, 32(13), 1996, pp. 1200-1202
CIRCULAR BEAM, HIGH-POWER OPERATION OF 0.98-MU-M INGAAS INGAASP LASERS WITH A TAPERED WAVE-GUIDE SPOT-SIZE EXPANDER/
Authors: SHINODA K HIRAMOTO K SAGAWA M TOYONAKA T UOMI K
Citation: K. Shinoda et al., CIRCULAR BEAM, HIGH-POWER OPERATION OF 0.98-MU-M INGAAS INGAASP LASERS WITH A TAPERED WAVE-GUIDE SPOT-SIZE EXPANDER/, Electronics Letters, 32(12), 1996, pp. 1101-1102
HIGH-REFLECTIVITY INGAP GAAS MULTILAYER REFLECTOR GROWN BY MOCVD FOR HIGHLY RELIABLE 0.98-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS/
Authors: SHINODA K HIRAMOTO K UOMI K TSUCHIYA T
Citation: K. Shinoda et al., HIGH-REFLECTIVITY INGAP GAAS MULTILAYER REFLECTOR GROWN BY MOCVD FOR HIGHLY RELIABLE 0.98-MU-M VERTICAL-CAVITY SURFACE-EMITTING LASERS/, JPN J A P 1, 34(2B), 1995, pp. 1253-1256
HIGH-POWER HIGHLY-RELIABLE OPERATION OF 0.98-MU-M INGAAS-INGAP STRAIN-COMPENSATED SINGLE-QUANTUM-WELL LASERS WITH TENSILE-STRAINED INGAASP BARRIERS
Authors: SAGAWA M TOYONAKA T HIRAMOTO K SHINODA K UOMI K
Citation: M. Sagawa et al., HIGH-POWER HIGHLY-RELIABLE OPERATION OF 0.98-MU-M INGAAS-INGAP STRAIN-COMPENSATED SINGLE-QUANTUM-WELL LASERS WITH TENSILE-STRAINED INGAASP BARRIERS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 189-195
Risultati: 1-25 | 26-44