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Results:
1-14
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Results: 14
Authors:
KOIZUMI S
KAMO M
SATO Y
MITA S
SAWABE A
REZNIK A
UZANSAGUY C
KALISH R
Citation: S. Koizumi et al., GROWTH AND CHARACTERIZATION OF PHOSPHORUS-DOPED N-TYPE DIAMOND THIN-FILMS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 540-544
Authors:
UZANSAGUY C
KALISH R
WALKER R
JAMIESON DN
PRAWER S
Citation: C. Uzansaguy et al., FORMATION OF DELTA-DOPED, BURIED CONDUCTING LAYERS IN DIAMOND, BY HIGH-ENERGY, B-ION IMPLANTATION, DIAMOND AND RELATED MATERIALS, 7(10), 1998, pp. 1429-1432
Authors:
KALISH R
UZANSAGUY C
PHILOSOPH B
RICHTER V
LAGRANGE JP
GHEERAERT E
DENEUVILLE A
COLLINS AT
Citation: R. Kalish et al., NITROGEN DOPING OF DIAMOND BY ION-IMPLANTATION, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 516-520
Authors:
KALISH R
UZANSAGUY C
PHILOSOPH B
RICHTER V
PRAWER S
Citation: R. Kalish et al., LOSS OF ELECTRICAL-CONDUCTIVITY IN BORON-DOPED DIAMOND DUE TO ION-INDUCED DAMAGE, Applied physics letters, 70(8), 1997, pp. 999-1001
Authors:
FONTAINE F
UZANSAGUY C
PHILOSOPH B
KALISH R
Citation: F. Fontaine et al., BORON IMPLANTATION IN-SITU ANNEALING PROCEDURE FOR OPTIMAL P-TYPE PROPERTIES OF DIAMOND, Applied physics letters, 68(16), 1996, pp. 2264-2266
Authors:
UZANSAGUY C
RICHTER V
PRAWER S
LIFSHITZ Y
GROSSMAN E
KALISH R
Citation: C. Uzansaguy et al., NATURE OF DAMAGE IN DIAMOND IMPLANTED AT LOW-TEMPERATURES, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 569-574
Authors:
LIFSHITZ Y
LEMPERT GD
GROSSMAN E
AVIGAL I
UZANSAGUY C
KALISH R
KULIK J
MARTON D
RABALAIS JW
Citation: Y. Lifshitz et al., GROWTH MECHANISMS OF DLC FILMS FROM C- EXPERIMENTAL STUDIES( IONS ), DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 318-323
Authors:
SANGRADOR J
LOPEZRUBIO JA
GONZALEZ C
RODRIGUEZ T
UZANSAGUY C
OPHIRARAD E
KALISH R
Citation: J. Sangrador et al., HG1-XCDXTE - ELECTRICAL AND STRUCTURAL-CHANGES INDUCED BY RAPID THERMAL ANNEALING, Journal of crystal growth, 151(3-4), 1995, pp. 254-260
Authors:
UZANSAGUY C
CYTERMANN C
BRENER R
RICHTER V
SHAANAN M
KALISH R
Citation: C. Uzansaguy et al., DAMAGE THRESHOLD FOR ION-BEAM-INDUCED GRAPHITIZATION OF DIAMOND, Applied physics letters, 67(9), 1995, pp. 1194-1196
Authors:
AMIR O
LIFSHITZ E
UZANSAGUY C
KALISH R
Citation: O. Amir et al., CHARACTERIZATION OF INDIUM-DOPED SNS2, European journal of solid state and inorganic chemistry, 31(7), 1994, pp. 631-648
Authors:
LIFSHITZ Y
LEMPERT GD
ROTTER S
AVIGAL I
UZANSAGUY C
KALISH R
KULIK J
MARTON D
RABALAIS JW
Citation: Y. Lifshitz et al., THE EFFECT OF ION ENERGY ON THE DIAMOND-LIKE GRAPHITIC (SP(3) SP(2)) NATURE OF CARBON-FILMS DEPOSITED BY ION-BEAMS/, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 542-546
Authors:
KALISH R
UZANSAGUY C
SAMOILOFF A
LOCHER R
KOIDL P
Citation: R. Kalish et al., DOPING OF POLYCRYSTALLINE DIAMOND BY BORON ION-IMPLANTATION, Applied physics letters, 64(19), 1994, pp. 2532-2534
Authors:
KALISH R
SAMOILOFF A
HOFFMAN A
UZANSAGUY C
MCCULLOCH D
PRAWER S
Citation: R. Kalish et al., DISINTEGRATION OF C-60 BY HEAVY-ION IRRADIATION, Physical review. B, Condensed matter, 48(24), 1993, pp. 18235-18238
Authors:
PRAWER S
UZANSAGUY C
BRAUNSTEIN G
KALISH R
Citation: S. Prawer et al., CAN N-TYPE DOPING OF DIAMOND BE ACHIEVED BY LI OR NA ION-IMPLANTATION, Applied physics letters, 63(18), 1993, pp. 2502-2504
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