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Results: 1-25/31
Authors:
ROSINK JJWM
BLAUW MA
GEERLIGS LJ
VANDERDRIFT E
ROUSSEEUW BAC
RADELAAR S
Citation: Jjwm. Rosink et al., GROWTH AND CHARACTERIZATION OF ORGANIC MULTILAYERS ON GOLD GROWN BY ORGANIC MOLECULAR-BEAM DEPOSITION, Optical materials, 9(1-4), 1998, pp. 416-422
Authors:
ZUIDDAM MR
ROGGE S
GEERLIGS LJ
VANDERDRIFT E
ILGE B
PALASANTZAS G
Citation: Mr. Zuiddam et al., CONTACT AND ALIGNMENT MARKER TECHNOLOGY FOR ATOMIC-SCALE DEVICE FABRICATION, Microelectronic engineering, 42, 1998, pp. 567-570
Authors:
LUKEY PW
CARO J
ZIJLSTRA T
VANDERDRIFT E
RADELAAR S
Citation: Pw. Lukey et al., OBSERVATION OF STRAIN-RELAXATION-INDUCED SIZE EFFECTS IN P-TYPE SI SIGE RESONANT-TUNNELING DIODES/, Physical review. B, Condensed matter, 57(12), 1998, pp. 7132-7140
Authors:
VANDERDRIFT E
DINH BQ
VERHOEVEN PA
FAKKELDIJ EJM
ZUIDDAM MR
ZIJLSTRA T
Citation: E. Vanderdrift et al., INTERACTIVE EFFECTS IN REACTIVE ION ETCHING OF W1-XGEX, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2676-2681
Authors:
VANVEEN RG
TEEPEN MJ
VANDERDRIFT E
ZIJLSTRA T
FAKKELDIJ EJM
WERNER K
VERBRUGGEN AH
RADELAAR S
Citation: Rg. Vanveen et al., CHEMICAL VS PHYSICAL FACTORS IN DRY-ETCHING INDUCED DAMAGE IN THE SI GEXSI1-X SYSTEM/, Microelectronic engineering, 35(1-4), 1997, pp. 55-58
Authors:
BOZON B
ZIJLSTRA T
GLUCK M
HERSENER J
VANDERDRIFT E
KONIG U
Citation: B. Bozon et al., A LOW-TEMPERATURE GATE OXIDE PROCESS FOR N-CHANNEL SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS, Journal of applied physics, 82(9), 1997, pp. 4611-4615
Authors:
VANDERDRIFT E
CHEUNG R
ZIJLSTRA T
Citation: E. Vanderdrift et al., DRY-ETCHING AND INDUCED DAMAGE, Microelectronic engineering, 32(1-4), 1996, pp. 241-253
Authors:
VLEEMING BJ
LEENE JLTR
VANDERDRIFT E
ROMIJN J
Citation: Bj. Vleeming et al., DUV-E-BEAM MIX AND MATCH LITHOGRAPHY IN A SINGLE MASK FOR FABRICATINGA MULTITERMINAL SQUID DEVICE, Microelectronic engineering, 30(1-4), 1996, pp. 81-84
Authors:
VANDERHARG AJM
ROUSSEEUW BAC
VANDERDRIFT E
Citation: Ajm. Vanderharg et al., TEMPLATE PATTERNING OF YBA2CU3O7, Microelectronic engineering, 30(1-4), 1996, pp. 369-372
Authors:
THEUNISSEN MH
VANDERDRIFT E
KES PH
Citation: Mh. Theunissen et al., SIZE EFFECTS IN FLOW OF FLUX-LINE SOLIDS AND LIQUIDS, Physical review letters, 77(1), 1996, pp. 159-162
Authors:
WERNER K
STORM A
BUTZKE S
MAES JW
VANROOY M
ALKEMADE P
ALGRA E
SOMERS M
DELANGE B
VANDERDRIFT E
ZIJLSTRA T
RADELAAR S
Citation: K. Werner et al., GAS-SOURCE MBE GROWTH OF SI SIGE DEVICE MATERIALS/, Journal of crystal growth, 164(1-4), 1996, pp. 223-234
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., STOW STATES IN VACUUM-ULTRAVIOLET IRRADIATED METAL-OXIDE-SILICON SYSTEMS, Journal of applied physics, 79(3), 1996, pp. 1505-1510
Authors:
KUZNETSOV VI
VONVEEN R
VANDERDRIFT E
WERNER K
VERBRUGGEN AH
RADELAAR S
Citation: Vi. Kuznetsov et al., TECHNOLOGY FOR HIGH-PERFORMANCE N-CHANNEL SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2892-2896
Authors:
VANDERHARG AJM
VANDERDRIFT E
HADLEY P
Citation: Ajm. Vanderharg et al., DEEP-SUBMICRON STRUCTURES IN YBCO - FABRICATION AND MEASUREMENTS, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 1448-1451
Authors:
ROUSSEEUW BAC
PUYENBROEK R
VANDERDRIFT E
VANDEGRAMPEL JC
Citation: Bac. Rousseeuw et al., SILICON-CONTAINING RESISTS WITH POSITIVE AND NEGATIVE TONE, Microelectronic engineering, 27(1-4), 1995, pp. 375-379
Authors:
VANDERDRIFT E
ZIJLSTRA T
FAKKELDIJ EJM
CHEUNG R
WERNER K
RADELAAR S
Citation: E. Vanderdrift et al., XPS STUDY ON DRY-ETCHING OF SI GEXSI1-X, Microelectronic engineering, 27(1-4), 1995, pp. 481-485
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
AFANASEV VV
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES, Journal of non-crystalline solids, 187, 1995, pp. 206-210
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., RECOVERY OF VACUUM-ULTRAVIOLET IRRADIATED METAL-OXIDE-SILICON SYSTEMS, Journal of applied physics, 78(1), 1995, pp. 306-316
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., PRODUCTION OF ATOMIC-HYDROGEN IN AL-SIO2-SI SYSTEMS BY VACUUM-ULTRAVIOLET RADIATION, Applied physics letters, 67(21), 1995, pp. 3162-3164
Authors:
SOHN LL
ROMIJN J
VANDERDRIFT E
ELION WJ
MOOIJ JE
Citation: Ll. Sohn et al., FABRICATION OF A QUASI-3-DIMENSIONAL JOSEPHSON-JUNCTION ARRAY, Physica. B, Condensed matter, 194, 1994, pp. 125-126
Authors:
VANDERDRIFT E
ZIJLSTRA T
CHEUNG R
WERNER K
RADELAAR S
Citation: E. Vanderdrift et al., REACTIVE ION ETCHING MECHANISM STUDY ON SI GEXSI1-X/, Microelectronic engineering, 23(1-4), 1994, pp. 343-348
Authors:
WEBSTER MN
TUINHOUT A
LOCHEL B
VERBRUGGEN AH
ROMIJN J
VANDERDRIFT E
RADELAAR S
JOS HFF
MOORS PMA
Citation: Mn. Webster et al., METALLIZATION OF SUBMICRON MICROWAVE BIPOLAR-TRANSISTORS BY ELECTROPLATING, Microelectronic engineering, 23(1-4), 1994, pp. 441-444
Authors:
HILBRANDIE GR
BAKKER SJM
VANDERDRIFT E
ROUSSEEUW BAC
KLAPWIJK TM
RADELAAR S
Citation: Gr. Hilbrandie et al., MESOSCOPIC SILICON COUPLED SUPERCONDUCTING JUNCTIONS OF COSI2 FORMED IN A SELF-ALIGNED PROCESS, Microelectronic engineering, 23(1-4), 1994, pp. 445-448
Authors:
RADELAAR S
ROMIJN J
VANDERDRIFT E
Citation: S. Radelaar et al., PROCEEDINGS OF THE INTERNATIONAL-CONFERENCE ON MICROFABRICATION - SEPTEMBER 26-29, 1993 MAASTRICHT, THE NETHERLANDS, Microelectronic engineering, 23(1-4), 1994, pp. 180000007-180000007
Authors:
BAKKER SJM
VANDERDRIFT E
KLAPWIJK TM
JAEGER HM
RADELAAR S
Citation: Sjm. Bakker et al., OBSERVATION OF CARRIER-CONCENTRATION-DEPENDENT REFLECTIONLESS TUNNELING IN A SUPERCONDUCTOR 2-DIMENSIONAL-ELECTRON-GAS SUPERCONDUCTOR STRUCTURE, Physical review. B, Condensed matter, 49(18), 1994, pp. 13275-13278