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Results: 1-12 |
Results: 12
STRUCTURE AND TRANSPORT-PROPERTIES OF INTEGRATED DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE GROWN MICROCRYSTALLINE SILICON
Authors: BULKIN P BRENOT R DREVILLON B VANDERHAGHEN R
Citation: P. Bulkin et al., STRUCTURE AND TRANSPORT-PROPERTIES OF INTEGRATED DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE GROWN MICROCRYSTALLINE SILICON, Journal of non-crystalline solids, 231(3), 1998, pp. 268-272
IN-SITU CHARACTERIZATION OF MICROCRYSTALLINE SILICON BY TIME-RESOLVEDMICROWAVE CONDUCTIVITY
Authors: BRENOT R BULKIN P CABARROCAS PRI DREVILLON B VANDERHAGHEN R
Citation: R. Brenot et al., IN-SITU CHARACTERIZATION OF MICROCRYSTALLINE SILICON BY TIME-RESOLVEDMICROWAVE CONDUCTIVITY, Journal of non-crystalline solids, 230, 1998, pp. 1001-1005
HIGH-ELECTRIC-FIELD HOLE MOBILITY IN A-SI-H
Authors: JUSKA G ARLAUSKAS K EQUER B VANDERHAGHEN R
Citation: G. Juska et al., HIGH-ELECTRIC-FIELD HOLE MOBILITY IN A-SI-H, Journal of non-crystalline solids, 230, 1998, pp. 176-179
TIME-RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENTS FOR THE CHARACTERIZATION OF TRANSPORT-PROPERTIES IN THIN-FILM MICROCRYSTALLINE SILICON
Authors: BRENOT R VANDERHAGHEN R DREVILLON B FRENCH I CABARROCAS PRI
Citation: R. Brenot et al., TIME-RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENTS FOR THE CHARACTERIZATION OF TRANSPORT-PROPERTIES IN THIN-FILM MICROCRYSTALLINE SILICON, Thin solid films, 296(1-2), 1997, pp. 94-97
THIN-FILM OPTICAL SENSOR WITH SPECTRAL SE LECTIVITY - ATMOSPHERIC TURBIDITY MEASUREMENT APPLICATION
Authors: VANDERHAGHEN R EQUER B FRANGIA JP DEROSNY G
Citation: R. Vanderhaghen et al., THIN-FILM OPTICAL SENSOR WITH SPECTRAL SE LECTIVITY - ATMOSPHERIC TURBIDITY MEASUREMENT APPLICATION, Annales de chimie, 20(7-8), 1995, pp. 491-494
MODULATED PHOTOELLIPSOMETRY - APPLICATION TO THE MEASUREMENT OF GAAS INTERNAL FIELD
Authors: VANDERHAGHEN R CUEILLE S DREVILLON B OSSIKOVSKI R
Citation: R. Vanderhaghen et al., MODULATED PHOTOELLIPSOMETRY - APPLICATION TO THE MEASUREMENT OF GAAS INTERNAL FIELD, Physica status solidi. a, Applied research, 152(1), 1995, pp. 85-93
INTERFACE EFFECTS ON DOUBLE INJECTION CURRENT AND PHOTOCURRENT IN A-SI-H N-I-P AND P-I-N-DIODES
Authors: VANDERHAGHEN R HAN DX
Citation: R. Vanderhaghen et Dx. Han, INTERFACE EFFECTS ON DOUBLE INJECTION CURRENT AND PHOTOCURRENT IN A-SI-H N-I-P AND P-I-N-DIODES, Journal of non-crystalline solids, 190(1-2), 1995, pp. 95-106
IN-SITU MEASUREMENTS OF CHANGES IN THE STRUCTURE AND IN THE EXCESS CHARGE-CARRIER KINETICS AT THE SILICON SURFACE DURING HYDROGEN AND HELIUM PLASMA EXPOSURE
Authors: NEITZERT HC LAYADI N CABARROCAS PRI VANDERHAGHEN R KUNST M
Citation: Hc. Neitzert et al., IN-SITU MEASUREMENTS OF CHANGES IN THE STRUCTURE AND IN THE EXCESS CHARGE-CARRIER KINETICS AT THE SILICON SURFACE DURING HYDROGEN AND HELIUM PLASMA EXPOSURE, Journal of applied physics, 78(3), 1995, pp. 1438-1445
IN-SITU MICROWAVE REFLECTIVITY MEASUREMENTS OF THE CHANGES IN SURFACERECOMBINATION OF CRYSTALLINE SILICON INDUCED BY THE EXPOSURE TO SILANE, SILANE HELIUM, AND HELIUM PLASMAS/
Authors: NEITZERT HC LAYADI N CABARROCAS PR VANDERHAGHEN R
Citation: Hc. Neitzert et al., IN-SITU MICROWAVE REFLECTIVITY MEASUREMENTS OF THE CHANGES IN SURFACERECOMBINATION OF CRYSTALLINE SILICON INDUCED BY THE EXPOSURE TO SILANE, SILANE HELIUM, AND HELIUM PLASMAS/, Applied physics letters, 65(10), 1994, pp. 1260-1262
CARRIER TRANSPORT IN A-SI-H A-SI-N AND A-SI-H/A-SI-C MULTILAYERS/
Authors: CHEVRIER JB VANDERHAGHEN R SWIATKOWSKI C NEITZERT HC KUNST M
Citation: Jb. Chevrier et al., CARRIER TRANSPORT IN A-SI-H A-SI-N AND A-SI-H/A-SI-C MULTILAYERS/, Journal of non-crystalline solids, 166, 1993, pp. 837-840
EFFECT OF LIGHT-INDUCED DEGRADATION ON PHOTOCONDUCTIVE GAIN IN A-SI-HN-I-P DEVICES
Authors: VANDERHAGHEN R AMOKRANE R HAN DX SILVER M
Citation: R. Vanderhaghen et al., EFFECT OF LIGHT-INDUCED DEGRADATION ON PHOTOCONDUCTIVE GAIN IN A-SI-HN-I-P DEVICES, Journal of non-crystalline solids, 166, 1993, pp. 599-602
HOT CARRIER RELAXATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS
Authors: MOURCHID A HULIN D VANDERHAGHEN R FAUCHET PM
Citation: A. Mourchid et al., HOT CARRIER RELAXATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS, Semiconductor science and technology, 7(3B), 1992, pp. 302-304
Risultati: 1-12 |