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Results: 1-24 |
Results: 24
AMORPHOUS-SILICON CARBIDE CRYSTALLINE SILICON HETEROJUNCTION SOLAR-CELLS - A COMPREHENSIVE STUDY OF THE PHOTOCARRIER COLLECTION/
Authors: VANCLEEF MWM RUBINELLI FA RIZZOLI R PINGHINI R SCHROPP REI VANDERWEG WF
Citation: Mwm. Vancleef et al., AMORPHOUS-SILICON CARBIDE CRYSTALLINE SILICON HETEROJUNCTION SOLAR-CELLS - A COMPREHENSIVE STUDY OF THE PHOTOCARRIER COLLECTION/, JPN J A P 1, 37(7), 1998, pp. 3926-3932
REDUCTION OF TIN OXIDE BY HYDROGEN RADICALS
Authors: WALLINGA J ARNOLDBIK WM VREDENBERG AM SCHROPP REI VANDERWEG WF
Citation: J. Wallinga et al., REDUCTION OF TIN OXIDE BY HYDROGEN RADICALS, JOURNAL OF PHYSICAL CHEMISTRY B, 102(32), 1998, pp. 6219-6224
VHF A-SI-H SOLAR-CELLS - A SYSTEMATIC MATERIAL AND CELL STUDY
Authors: VANSARK WGJHM BEZEMER J VANDERWEG WF
Citation: Wgjhm. Vansark et al., VHF A-SI-H SOLAR-CELLS - A SYSTEMATIC MATERIAL AND CELL STUDY, Journal of materials research, 13(1), 1998, pp. 45-52
ON THE TRANSMISSION FUNCTION OF AN ION-ENERGY AND MASS-SPECTROMETER
Authors: HAMERS EAG VANSARK WGJHM BEZEMER J GOEDHEER WJ VANDERWEG WF
Citation: Eag. Hamers et al., ON THE TRANSMISSION FUNCTION OF AN ION-ENERGY AND MASS-SPECTROMETER, International journal of mass spectrometry and ion processes, 173(1-2), 1998, pp. 91-98
PHOTOCARRIER COLLECTION IN A-SIC-H C-SI HETEROJUNCTION SOLAR-CELLS/
Authors: VANCLEEF MWM RUBINELLI FA RATH JK SCHROPP REI VANDERWEG WF RIZZOLI R SUMMONTE C PINGHINI R CENTURIONI E GALLONI R
Citation: Mwm. Vancleef et al., PHOTOCARRIER COLLECTION IN A-SIC-H C-SI HETEROJUNCTION SOLAR-CELLS/, Journal of non-crystalline solids, 230, 1998, pp. 1291-1294
STRUCTURAL DEFECTS AND HYDROGEN CLUSTERING IN AMORPHOUS-SILICON
Authors: ACCO S WILLIAMSON DL ROORDA S VANSARK WGJHM POLMAN A VANDERWEG WF
Citation: S. Acco et al., STRUCTURAL DEFECTS AND HYDROGEN CLUSTERING IN AMORPHOUS-SILICON, Journal of non-crystalline solids, 230, 1998, pp. 128-132
STRUCTURAL-PROPERTIES OF A-SI-H RELATED TO ION ENERGY-DISTRIBUTIONS IN VHF SILANE DEPOSITION PLASMAS
Authors: HAMERS EAG VANSARK WGJHM BEZEMER J MEILING H VANDERWEG WF
Citation: Eag. Hamers et al., STRUCTURAL-PROPERTIES OF A-SI-H RELATED TO ION ENERGY-DISTRIBUTIONS IN VHF SILANE DEPOSITION PLASMAS, Journal of non-crystalline solids, 226(3), 1998, pp. 205-216
STRUCTURE AND HYDROGEN CONTENT OF STABLE HOT-WIRE-DEPOSITED AMORPHOUS-SILICON
Authors: BROCKHOFF AM ULLERSMA EHC MEILING H HABRAKEN FHPM VANDERWEG WF
Citation: Am. Brockhoff et al., STRUCTURE AND HYDROGEN CONTENT OF STABLE HOT-WIRE-DEPOSITED AMORPHOUS-SILICON, Applied physics letters, 73(22), 1998, pp. 3244-3246
INHOMOGENEITIES IN PECVD DEPOSITED ALPHA-SI-H FILMS INDUCED BY A SPACING BETWEEN SUBSTRATE AND SUBSTRATE HOLDER
Authors: VANSARK WGJHM MEILING H BEZEMER J VONDERLINDEN MB SCHROPP REI VANDERWEG WF
Citation: Wgjhm. Vansark et al., INHOMOGENEITIES IN PECVD DEPOSITED ALPHA-SI-H FILMS INDUCED BY A SPACING BETWEEN SUBSTRATE AND SUBSTRATE HOLDER, Solar energy materials and solar cells, 45(1), 1997, pp. 57-63
SHEATH THICKNESS IN VERY-HIGH-FREQUENCY PLASMA CHEMICAL-VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
Authors: VANSARK WGJHM MEILING H HAMERS EAG BEZEMER J VANDERWEG WF
Citation: Wgjhm. Vansark et al., SHEATH THICKNESS IN VERY-HIGH-FREQUENCY PLASMA CHEMICAL-VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 654-658
THERMALLY STIMULATED CONDUCTIVITY IN DISORDERED SEMICONDUCTORS AT LOW-TEMPERATURES
Authors: BARANOVSKII SD ZHU M FABER T HENSEL F THOMAS P VONDERLINDEN MB VANDERWEG WF
Citation: Sd. Baranovskii et al., THERMALLY STIMULATED CONDUCTIVITY IN DISORDERED SEMICONDUCTORS AT LOW-TEMPERATURES, Physical review. B, Condensed matter, 55(24), 1997, pp. 16226-16232
EFFECTS OF THE DEFECT STRUCTURE ON HYDROGEN TRANSPORT IN AMORPHOUS-SILICON
Authors: ACCO S BEYER W VANFAASSEN EE VANDERWEG WF
Citation: S. Acco et al., EFFECTS OF THE DEFECT STRUCTURE ON HYDROGEN TRANSPORT IN AMORPHOUS-SILICON, Journal of applied physics, 82(6), 1997, pp. 2862-2868
PERFORMANCE OF HETEROJUNCTION P(-CELLS() MICROCRYSTALLINE SILICON N CRYSTALLINE SILICON SOLAR)
Authors: VANCLEEF NWM RATH JK RUBINELLI FA VANDERWERF CHM SCHROPP REI VANDERWEG WF
Citation: Nwm. Vancleef et al., PERFORMANCE OF HETEROJUNCTION P(-CELLS() MICROCRYSTALLINE SILICON N CRYSTALLINE SILICON SOLAR), Journal of applied physics, 82(12), 1997, pp. 6089-6095
ION-IMPLANTATION INTO AMORPHOUS SOLIDS
Authors: VANDERWEG WF BERNTSEN AJM SARIS FW POLMAN A
Citation: Wf. Vanderweg et al., ION-IMPLANTATION INTO AMORPHOUS SOLIDS, Materials chemistry and physics, 46(2-3), 1996, pp. 140-146
HYDROGEN SOLUBILITY AND NETWORK STABILITY IN AMORPHOUS-SILICON
Authors: ACCO S WILLIAMSON DL STOLK PA SARIS FW VANDENBOOGAARD MJ SINKE WC VANDERWEG WF ROORDA S
Citation: S. Acco et al., HYDROGEN SOLUBILITY AND NETWORK STABILITY IN AMORPHOUS-SILICON, Physical review. B, Condensed matter, 53(8), 1996, pp. 4415-4427
DEPOSITION-RATE REDUCTION THROUGH IMPROPER SUBSTRATE-TO-ELECTRODE ATTACHMENT IN VERY-HIGH-FREQUENCY DEPOSITION OF A-SI-H
Authors: MEILING H VANSARK WGJHM BEZEMER J VANDERWEG WF
Citation: H. Meiling et al., DEPOSITION-RATE REDUCTION THROUGH IMPROPER SUBSTRATE-TO-ELECTRODE ATTACHMENT IN VERY-HIGH-FREQUENCY DEPOSITION OF A-SI-H, Journal of applied physics, 80(6), 1996, pp. 3546-3551
ROLE OF IONS IN PECVD OF AMORPHOUS-SILICON
Authors: VANSARK WGJHM BEZEMER J VANDERWEG WF
Citation: Wgjhm. Vansark et al., ROLE OF IONS IN PECVD OF AMORPHOUS-SILICON, Surface & coatings technology, 74-5(1-3), 1995, pp. 63-66
STRUCTURAL ORDER IN THIN A-SI-H FILMS
Authors: BERNTSEN AJM VANSARK WGJHM VANDERWEG WF
Citation: Ajm. Berntsen et al., STRUCTURAL ORDER IN THIN A-SI-H FILMS, Journal of applied physics, 78(3), 1995, pp. 1964-1967
ELECTROPHOTOGRAPHIC DISCHARGE OF CDS EXPLAINED BY A SURFACE-DEPLETIONDISCHARGE MODEL
Authors: VANSWAAIJ RACMM WILLEMS WPM LOKKER JP BEZEMER J VANDERWEG WF
Citation: Racmm. Vanswaaij et al., ELECTROPHOTOGRAPHIC DISCHARGE OF CDS EXPLAINED BY A SURFACE-DEPLETIONDISCHARGE MODEL, Journal of applied physics, 77(4), 1995, pp. 1635-1639
EFFECT OF HYDROGEN DILUTION ON THE BONDING CONFIGURATIONS IN ALPHA-SIC-H
Authors: OUWENS JD SCHROPP REI VANDERWEG WF
Citation: Jd. Ouwens et al., EFFECT OF HYDROGEN DILUTION ON THE BONDING CONFIGURATIONS IN ALPHA-SIC-H, Solid state communications, 92(11), 1994, pp. 853-855
LOCAL-STRUCTURE AND BONDING STATES IN A-SI1-XCX-H
Authors: VANSWAAIJ RACMM BERNTSEN AJM VANSARK WGJHM HERREMANS H BEZEMER J VANDERWEG WF
Citation: Racmm. Vanswaaij et al., LOCAL-STRUCTURE AND BONDING STATES IN A-SI1-XCX-H, Journal of applied physics, 76(1), 1994, pp. 251-256
CONTRIBUTION OF DEFECTS TO ELECTRONIC, STRUCTURAL, AND THERMODYNAMIC PROPERTIES OF AMORPHOUS-SILICON
Authors: STOLK PA SARIS FW BERNTSEN AJM VANDERWEG WF SEALY LT BARKLIE RC KROTZ G MULLER G
Citation: Pa. Stolk et al., CONTRIBUTION OF DEFECTS TO ELECTRONIC, STRUCTURAL, AND THERMODYNAMIC PROPERTIES OF AMORPHOUS-SILICON, Journal of applied physics, 75(11), 1994, pp. 7266-7286
INTERPRETATION OF THE SILICON-HYDROGEN STRETCHING DOUBLET IN A-SIH HYDROGENATED AMORPHOUS-SILICON
Authors: OUWENS JD SCHROPP REI VANDERWEG WF
Citation: Jd. Ouwens et al., INTERPRETATION OF THE SILICON-HYDROGEN STRETCHING DOUBLET IN A-SIH HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 65(2), 1994, pp. 204-206
SEPARATING THE EFFECTS OF HYDROGEN AND BOND-ANGLE VARIATION ON THE AMORPHOUS-SILICON BAND-GAP
Authors: BERNTSEN AJM VANDERWEG WF STOLK PA SARIS FW
Citation: Ajm. Berntsen et al., SEPARATING THE EFFECTS OF HYDROGEN AND BOND-ANGLE VARIATION ON THE AMORPHOUS-SILICON BAND-GAP, Physical review. B, Condensed matter, 48(19), 1993, pp. 14656-14658
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