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Results:
1-7
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Results: 7
Authors:
VANMEER H
VALENZA M
VANDERZANDEN K
DERAEDT W
SIMOEN E
SCHREURS D
KAUFMANN L
Citation: H. Vanmeer et al., EFFECT OF SCHOTTKY-BARRIER ALTERATION ON THE LOW-FREQUENCY NOISE OF INP-BASED HEMTS, IEEE electron device letters, 19(10), 1998, pp. 370-372
Authors:
SCHREURS D
VANMEER H
VANDERZANDEN K
DERAEDT W
NAUWELAERS B
VANDECAPELLE A
Citation: D. Schreurs et al., IMPROVED HEMT MODEL FOR LOW PHASE-NOISE INP-BASED MMIC OSCILLATORS, IEEE transactions on microwave theory and techniques, 46(10), 1998, pp. 1583-1585
Authors:
VANMEER H
SIMOEN E
VALENZA M
VANDERZANDEN K
DERAEDT W
Citation: H. Vanmeer et al., LOW-FREQUENCY DRAIN CURRENT NOISE BEHAVIOR OF INP BASED MODFETS IN THE LINEAR AND SATURATION REGIME, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2475-2482
Authors:
BEHET M
VANDERZANDEN K
BORGHS G
BEHRES A
Citation: M. Behet et al., METAMORPHIC INGAAS INALAS QUANTUM-WELL STRUCTURES GROWN ON GAAS SUBSTRATES FOR HIGH-ELECTRON-MOBILITY TRANSISTOR APPLICATIONS/, Applied physics letters, 73(19), 1998, pp. 2760-2762
Authors:
VANHOVE M
FINDERS J
VANDERZANDEN K
DERAEDT W
VANROSSUM M
BAEYENS Y
SCHREURS D
MENOZZI R
Citation: M. Vanhove et al., MATERIAL AND PROCESS-RELATED LIMITATIONS OF INP HEMT PERFORMANCE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 311-315
Authors:
BLOM FAP
PEETERS FM
VANDERZANDEN K
VANHOVE M
Citation: Fap. Blom et al., MAGNETO-OSCILLATIONS OF THE GATE CURRENT IN A LATERALLY MODULATED 2-DIMENSIONAL ELECTRON-GAS, Surface science, 362(1-3), 1996, pp. 851-854
Authors:
SCHREURS D
SPIERS A
DERAEDT W
VANDERZANDEN K
BAEYENS Y
VANHOVE M
NAUWELAERS B
VANROSSUM M
Citation: D. Schreurs et al., DC, LF DISPERSION AND HF CHARACTERIZATION OF SHORT-TIME STRESSED INP BASED LM-HEMTS, Microelectronics and reliability, 36(11-12), 1996, pp. 1911-1914
Risultati:
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