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Results: 1-25 | 26-27
Results: 1-25/27
A NEW TECHNIQUE FOR IN-FIXTURE CALIBRATION USING STANDARDS OF CONSTANT LENGTH
Authors: WAN CH NAUWELAERS B SCHREURS D DERAEDT W VANROSSUM M
Citation: Ch. Wan et al., A NEW TECHNIQUE FOR IN-FIXTURE CALIBRATION USING STANDARDS OF CONSTANT LENGTH, IEEE transactions on microwave theory and techniques, 46(9), 1998, pp. 1318-1320
2 NEW MEASUREMENT METHODS FOR EXPLICIT DETERMINATION OF COMPLEX PERMITTIVITY
Authors: WAN CH NAUWELAERS B DERAEDT W VANROSSUM M
Citation: Ch. Wan et al., 2 NEW MEASUREMENT METHODS FOR EXPLICIT DETERMINATION OF COMPLEX PERMITTIVITY, IEEE transactions on microwave theory and techniques, 46(11), 1998, pp. 1614-1619
INTENSIFIED CONDITIONING REGIMEN IN CHILDREN TRANSPLANTED FOR AML IN FIRST AND ALL IN 2ND COMPLETE REMISSION
Authors: HOOGERBRUGGE PM VERSLUIS HPM VANWERING ER WEERDEN JFW VANDERDOESVANDERBERG A VANWEEL M VANROSSUM M VANTVEER L BLEESING JH VOSSEN JM
Citation: Pm. Hoogerbrugge et al., INTENSIFIED CONDITIONING REGIMEN IN CHILDREN TRANSPLANTED FOR AML IN FIRST AND ALL IN 2ND COMPLETE REMISSION, British Journal of Haematology, 102(1), 1998, pp. 323-323
MATERIAL AND PROCESS-RELATED LIMITATIONS OF INP HEMT PERFORMANCE
Authors: VANHOVE M FINDERS J VANDERZANDEN K DERAEDT W VANROSSUM M BAEYENS Y SCHREURS D MENOZZI R
Citation: M. Vanhove et al., MATERIAL AND PROCESS-RELATED LIMITATIONS OF INP HEMT PERFORMANCE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 311-315
ANTINEUTROPHIL CYTOPLASMIC ANTIBODIES IN JUVENILE CHRONIC ARTHRITIS
Authors: MULDER L VANROSSUM M HORST G LIMBURG P DEGRAEFFMEEDER ER KUIS W KALLENBERG C
Citation: L. Mulder et al., ANTINEUTROPHIL CYTOPLASMIC ANTIBODIES IN JUVENILE CHRONIC ARTHRITIS, Journal of rheumatology, 24(3), 1997, pp. 568-575
EFFECT OF CAPTURE AND ESCAPE PHENOMENA IN MONTE-CARLO TECHNIQUE ON THE SIMULATION OF THE NONLINEAR CHARACTERISTICS IN HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: ABOUKHALIL M SCHREURS D NAUWELAERS B VANROSSUM M MACIEJKO R WU K
Citation: M. Aboukhalil et al., EFFECT OF CAPTURE AND ESCAPE PHENOMENA IN MONTE-CARLO TECHNIQUE ON THE SIMULATION OF THE NONLINEAR CHARACTERISTICS IN HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of applied physics, 82(12), 1997, pp. 6312-6318
ANEMIA AND SEIZURES AT DISEASE ONSET ARE ASSOCIATED WITH A POOR-PROGNOSIS IN CHILDHOOD-ONSET SLE
Authors: ROOD MJ HERTZBERGER R VANROSSUM M OUWERKERK F DENOUDEN E BREEDVELD FC HUIZINGA TWJ
Citation: Mj. Rood et al., ANEMIA AND SEIZURES AT DISEASE ONSET ARE ASSOCIATED WITH A POOR-PROGNOSIS IN CHILDHOOD-ONSET SLE, Arthritis and rheumatism, 40(9), 1997, pp. 960-960
INFLUENCE OF CH4 H-2 REACTIVE ION ETCHING ON THE DEEP LEVELS OF SI-DOPED ALXGA1-XAS (X=0.25)/
Authors: PEREIRA RG VANHOVE M DEPOTTER M VANROSSUM M
Citation: Rg. Pereira et al., INFLUENCE OF CH4 H-2 REACTIVE ION ETCHING ON THE DEEP LEVELS OF SI-DOPED ALXGA1-XAS (X=0.25)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1773-1779
MODIFICATIONS OF THE 3-DIMENSIONAL TRANSPORT-PROPERTIES OF SI-DOPED AL0.25GA0.75AS EXPOSED TO CH4 H-2 REACTIVE ION ETCHING/
Authors: PEREIRA RG VANHOVE M VANROSSUM M
Citation: Rg. Pereira et al., MODIFICATIONS OF THE 3-DIMENSIONAL TRANSPORT-PROPERTIES OF SI-DOPED AL0.25GA0.75AS EXPOSED TO CH4 H-2 REACTIVE ION ETCHING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 106-111
S-PARAMETER MEASUREMENT BASED QUASI-STATIC LARGE-SIGNAL COLD HEMT MODEL FOR RESISTIVE MIXER DESIGN
Authors: SCHREURS DMMP BAEYENS Y NAUWELAERS BKJC DERAEDT W VANHOVE M VANROSSUM M
Citation: Dmmp. Schreurs et al., S-PARAMETER MEASUREMENT BASED QUASI-STATIC LARGE-SIGNAL COLD HEMT MODEL FOR RESISTIVE MIXER DESIGN, International journal of microwave and millimeter-wave computer-aided engineering, 6(4), 1996, pp. 250-258
THE FUTURE OF MICROELECTRONICS - EVOLUTION OR REVOLUTION
Authors: VANROSSUM M
Citation: M. Vanrossum, THE FUTURE OF MICROELECTRONICS - EVOLUTION OR REVOLUTION, Microelectronic engineering, 34(1), 1996, pp. 125-134
DC, LF DISPERSION AND HF CHARACTERIZATION OF SHORT-TIME STRESSED INP BASED LM-HEMTS
Authors: SCHREURS D SPIERS A DERAEDT W VANDERZANDEN K BAEYENS Y VANHOVE M NAUWELAERS B VANROSSUM M
Citation: D. Schreurs et al., DC, LF DISPERSION AND HF CHARACTERIZATION OF SHORT-TIME STRESSED INP BASED LM-HEMTS, Microelectronics and reliability, 36(11-12), 1996, pp. 1911-1914
COMPLEX PERMITTIVITY MEASUREMENT METHOD BASED ON ASYMMETRY OF RECIPROCAL 2-PORTS
Authors: WAN C NAUWELAERS B DERAEDT W VANROSSUM M
Citation: C. Wan et al., COMPLEX PERMITTIVITY MEASUREMENT METHOD BASED ON ASYMMETRY OF RECIPROCAL 2-PORTS, Electronics Letters, 32(16), 1996, pp. 1497-1498
OPTIMIZATION OF REACTIVE ION ETCHING OF AL0.48IN0.52AS IN CH4 H-2 BY THE EXPERIMENTAL-DESIGN METHOD/
Authors: CARPI EL VANHOVE M ALAY JL VANROSSUM M
Citation: El. Carpi et al., OPTIMIZATION OF REACTIVE ION ETCHING OF AL0.48IN0.52AS IN CH4 H-2 BY THE EXPERIMENTAL-DESIGN METHOD/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 895-901
HIGH-TEMPERATURE CONTACTS TO CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS- RELIABILITY ISSUES
Authors: JOHNSTON C CHALKER PR BUCKLEYGOLDER IM VANROSSUM M WERNER M OBERMEIER E
Citation: C. Johnston et al., HIGH-TEMPERATURE CONTACTS TO CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS- RELIABILITY ISSUES, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 206-210
INFLUENCE OF CH4 H-2 REACTIVE ION ETCHING ON ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS/GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES/
Authors: VANES CM EIJKEMANS TJ WOLTER JH PEREIRA R VANHOVE M VANROSSUM M
Citation: Cm. Vanes et al., INFLUENCE OF CH4 H-2 REACTIVE ION ETCHING ON ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS/GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES/, Materials science and technology, 11(1), 1995, pp. 41-45
ELECTRICAL-TRANSPORT IN (100)COSI2 SI CONTACTS/
Authors: LAUWERS A LARSEN KK VANHOVE M VERBEECK R MAEX K VANROSSUM M VERCAEMST A VANMEIRHAEGHE R CARDON F
Citation: A. Lauwers et al., ELECTRICAL-TRANSPORT IN (100)COSI2 SI CONTACTS/, Journal of applied physics, 77(6), 1995, pp. 2525-2536
CONSISTENT SMALL-SIGNAL AND LARGE-SIGNAL EXTRACTION TECHNIQUES FOR HETEROJUNCTION FETS
Authors: JANSEN P SCHREURS D DERAEDT W NAUWELAERS B VANROSSUM M
Citation: P. Jansen et al., CONSISTENT SMALL-SIGNAL AND LARGE-SIGNAL EXTRACTION TECHNIQUES FOR HETEROJUNCTION FETS, IEEE transactions on microwave theory and techniques, 43(1), 1995, pp. 87-93
ELECTRONIC TRANSPORT IN METALLIC IRON DISILICIDE
Authors: LARSEN KK VANHOVE M LAUWERS A DONATON RA MAEX K VANROSSUM M
Citation: Kk. Larsen et al., ELECTRONIC TRANSPORT IN METALLIC IRON DISILICIDE, Physical review. B, Condensed matter, 50(19), 1994, pp. 14200-14211
A COMBINED X-RAY-DIFFRACTION AND RAMAN ANALYSIS OF NI AU/TE-OHMIC CONTACTS TO N-GAAS/
Authors: WUYTS JWK SILVERANS RE VANHOVE M VANROSSUM M
Citation: Jwk. Wuyts et al., A COMBINED X-RAY-DIFFRACTION AND RAMAN ANALYSIS OF NI AU/TE-OHMIC CONTACTS TO N-GAAS/, Journal of applied physics, 75(4), 1994, pp. 2055-2060
SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/
Authors: VANHOVE M ZOU G DERAEDT W JANSEN P JONCKHEERE R VANROSSUM M HOOLE ACF ALLEE DR BROERS AN CROZAT P JIN Y ANIEL F ADDE R
Citation: M. Vanhove et al., SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1203-1208
FROM MICROELECTRONICS TO NANOELECTRONICS - NEW TECHNOLOGY REQUIREMENTS
Authors: VANROSSUM M
Citation: M. Vanrossum, FROM MICROELECTRONICS TO NANOELECTRONICS - NEW TECHNOLOGY REQUIREMENTS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 128-133
ION-BEAM SYNTHESIS OF COSI2 IN SI1-XGEX ALLOY LAYERS WITH DIFFERENT GE CONCENTRATIONS
Authors: LAUWERS A MAEX K VANHELLEMONT J CAYMAX M POORTMANS J VANROSSUM M
Citation: A. Lauwers et al., ION-BEAM SYNTHESIS OF COSI2 IN SI1-XGEX ALLOY LAYERS WITH DIFFERENT GE CONCENTRATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 906-909
NASAL DISCHARGE AND OBSTRUCTION AS PRESENTING SYMPTOMS OF WEGENER GRANULOMATOSIS IN CHILDHOOD
Authors: VERSCHUUR HP STRUYVENBERG PAA VANBENTHEM PPG VANROSSUM M HIEMSTRA I HORDIJK GJ
Citation: Hp. Verschuur et al., NASAL DISCHARGE AND OBSTRUCTION AS PRESENTING SYMPTOMS OF WEGENER GRANULOMATOSIS IN CHILDHOOD, International journal of pediatric otorhinolaryngology, 27(1), 1993, pp. 91-95
TRANSPORT AND OPTICAL-PROPERTIES OF ALGAAS GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES SUBJECTED TO CH4/H2 REACTIVE ION ETCHING/
Authors: VANES CM EIJKEMANS TJ WOLTER JH PEREIRA R VANHOVE M VANROSSUM M
Citation: Cm. Vanes et al., TRANSPORT AND OPTICAL-PROPERTIES OF ALGAAS GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES SUBJECTED TO CH4/H2 REACTIVE ION ETCHING/, Journal of applied physics, 74(10), 1993, pp. 6242-6246
Risultati: 1-25 | 26-27