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Results: 1-11 |
Results: 11
DETERMINING SURFACE RECOMBINATION RATES IN EPITAXIAL LAYERS OF N-CDXHG1-XTE FROM MEASUREMENTS OF THE PLANAR MAGNETORESISTANCE AND RELAXATION-TIMES FOR NONEQUILIBRIUM CHARGE-CARRIERS
Authors: BORODOVSKII PA BULDYGIN AF VARAVIN VS
Citation: Pa. Borodovskii et al., DETERMINING SURFACE RECOMBINATION RATES IN EPITAXIAL LAYERS OF N-CDXHG1-XTE FROM MEASUREMENTS OF THE PLANAR MAGNETORESISTANCE AND RELAXATION-TIMES FOR NONEQUILIBRIUM CHARGE-CARRIERS, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 963-965
CHARGE-CARRIER LIFETIME IN HG1-XCDXTE (X=0.22) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: VOITSEKHOVSKII AV DENISOV YA KOKHANENKO AP VARAVIN VS DVORETSKII SA LIBERMAN VT MIKHAILOV NN SIDOROV YG
Citation: Av. Voitsekhovskii et al., CHARGE-CARRIER LIFETIME IN HG1-XCDXTE (X=0.22) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 31(7), 1997, pp. 655-657
CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY P-CDXHG1-XTE LAYERS USING THE PHOTOCONDUCTIVE EFFECT IN CROSSED ER-RIGHT-ARROW-PERPENDICULAR-TO(B)OVER-RIGHT-ARROW FIELDS
Authors: STUDENIKIN SA PROTASOV DY KOSTYUCHENKO VY VARAVIN VS
Citation: Sa. Studenikin et al., CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY P-CDXHG1-XTE LAYERS USING THE PHOTOCONDUCTIVE EFFECT IN CROSSED ER-RIGHT-ARROW-PERPENDICULAR-TO(B)OVER-RIGHT-ARROW FIELDS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 288-291
PECULIARITIES OF THE MBE GROWTH PHYSICS AND TECHNOLOGY OF NARROW-GAP II-VI COMPOUNDS
Authors: SIDOROV YG DVORETSKY SA YAKUSHEV MV MIKHAILOV NN VARAVIN VS LIBERMAN VI
Citation: Yg. Sidorov et al., PECULIARITIES OF THE MBE GROWTH PHYSICS AND TECHNOLOGY OF NARROW-GAP II-VI COMPOUNDS, Thin solid films, 306(2), 1997, pp. 253-265
PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: OVSYUK VN REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK VASILEV VV ZAHARYASH TI SIDOROV YG DVORETSKY SA MIKHAYLOV NN LIBERMAN VG VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Infrared physics & technology, 37(3), 1996, pp. 321-323
PLANAR PHOTODIODES BASED ON CDXHG1-XTE EPITAXIAL LAYERS GROWN BY THE METHOD OF MOLECULAR-BEAM EPITAXY
Authors: OVSYUK VN VASILEV VV ZAKHARYASH TI REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK SIDOROV YG DVORETSKII SA MIKHAILOV NN LIBERMAN VG VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON CDXHG1-XTE EPITAXIAL LAYERS GROWN BY THE METHOD OF MOLECULAR-BEAM EPITAXY, Semiconductors, 30(2), 1996, pp. 109-111
MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY HG1-XCDXTE FILMS WITH CONTROL OF THE COMPOSITION DISTRIBUTION
Authors: VARAVIN VS DVORETSKY SA LIBERMAN VI MIKHAILOV NN SIDOROV YG
Citation: Vs. Varavin et al., MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY HG1-XCDXTE FILMS WITH CONTROL OF THE COMPOSITION DISTRIBUTION, Journal of crystal growth, 159(1-4), 1996, pp. 1161-1166
IN-SITU ELLIPSOMETRY DUE TO GROWING THE F ILMS OF CADMIUM-MERCURY-TELLURIUM SOLID-SOLUTIONS VIA MBE TECHNIQUE
Authors: SVITASHEV KK SHVETS VA MARDEZHOV AS DVORETSKII SA SIDOROV YG VARAVIN VS
Citation: Kk. Svitashev et al., IN-SITU ELLIPSOMETRY DUE TO GROWING THE F ILMS OF CADMIUM-MERCURY-TELLURIUM SOLID-SOLUTIONS VIA MBE TECHNIQUE, Zurnal tehniceskoj fiziki, 65(9), 1995, pp. 110-120
THE CONTROLLED GROWTH OF HIGH-QUALITY MERCURY CADMIUM TELLURIDE
Authors: VARAVIN VS DVORETSKY SA LIBERMAN VI MIKHAILOV NN SIDOROV YG
Citation: Vs. Varavin et al., THE CONTROLLED GROWTH OF HIGH-QUALITY MERCURY CADMIUM TELLURIDE, Thin solid films, 267(1-2), 1995, pp. 121-125
GROWTH OF CDXHG1-XTE FILMS BY VAPOR-PHASE EPITAXY OF HGTE ON CDTE SUBSTRATES FOLLOWED BY INTERDIFFUSION
Authors: VARAVIN VS SIDOROV YG REMESNIK VG CHIKICHEV SI NIS IE
Citation: Vs. Varavin et al., GROWTH OF CDXHG1-XTE FILMS BY VAPOR-PHASE EPITAXY OF HGTE ON CDTE SUBSTRATES FOLLOWED BY INTERDIFFUSION, Semiconductors, 28(4), 1994, pp. 348-352
THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USING IN-SITU ELLIPSOMETRY
Authors: SVITASHEV KK DVORETSKY SA SIDOROV YG SHVETS VA MARDEZHOV AS NIS IE VARAVIN VS LIBERMAN V REMESNIK VG
Citation: Kk. Svitashev et al., THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USING IN-SITU ELLIPSOMETRY, Crystal research and technology, 29(7), 1994, pp. 931-937
Risultati: 1-11 |