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Results: 1-16 |
Results: 16
SERIES OF FREE-EXCITON LINES IN ZINC DIARSENIDE
Authors: MOROZOVA VA VAVILOV VS KOSHELEV OG CHUKICHEV MV MARENKIN SF
Citation: Va. Morozova et al., SERIES OF FREE-EXCITON LINES IN ZINC DIARSENIDE, Physics of the solid state, 40(5), 1998, pp. 808-809
PECULIARITIES OF DIAMONDS FORMED IN ALKALINE CARBONATE-CARBON MELTS AT PRESSURES OF 8-10 GPA - SCANNING ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE DATA
Authors: LITVIN YA CHUDINOVSKIKH LT SAPARIN GV OBYDEN SK CHUKICHEV MV VAVILOV VS
Citation: Ya. Litvin et al., PECULIARITIES OF DIAMONDS FORMED IN ALKALINE CARBONATE-CARBON MELTS AT PRESSURES OF 8-10 GPA - SCANNING ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE DATA, Scanning, 20(5), 1998, pp. 380-388
CATHODOLUMINESCENCE OF ZNSE(BI)AL CRYSTALS
Authors: VAVILOV VS CHUKICHEV MV REZVANOV RR KLYUKANOV AA SUSHKEVICH KD SUSHKEVICH EK
Citation: Vs. Vavilov et al., CATHODOLUMINESCENCE OF ZNSE(BI)AL CRYSTALS, Physics of the solid state, 39(9), 1997, pp. 1358-1363
ATOMIC MIGRATION AND DEFECT CONCENTRATION AND STRUCTURE CHANGES DUE TO ELECTRONIC SUBSYSTEM EXCITATIONS IN A SEMICONDUCTOR
Authors: VAVILOV VS
Citation: Vs. Vavilov, ATOMIC MIGRATION AND DEFECT CONCENTRATION AND STRUCTURE CHANGES DUE TO ELECTRONIC SUBSYSTEM EXCITATIONS IN A SEMICONDUCTOR, Uspehi fiziceskih nauk, 167(4), 1997, pp. 407-412
DIAMOND IN SOLID-STATE ELECTRONICS
Authors: VAVILOV VS
Citation: Vs. Vavilov, DIAMOND IN SOLID-STATE ELECTRONICS, Uspehi fiziceskih nauk, 167(1), 1997, pp. 17-22
CURRENT KNOWLEDGE OF SEMICONDUCTORS
Authors: VAVILOV VS
Citation: Vs. Vavilov, CURRENT KNOWLEDGE OF SEMICONDUCTORS, Uspehi fiziceskih nauk, 166(7), 1996, pp. 807-808
LOW-FREQUENCY PLASMONS AND THE EMISSION O F ZNTE CRYSTALS SPECTRUM RED DOMAINS
Authors: VAVILOV VS KLYUKANOV AA SUSHKEVICH KD CHUKICHEV MV AVAVDEKH AZ REZVANOV RR
Citation: Vs. Vavilov et al., LOW-FREQUENCY PLASMONS AND THE EMISSION O F ZNTE CRYSTALS SPECTRUM RED DOMAINS, Fizika tverdogo tela, 37(2), 1995, pp. 312-317
SEMICONDUCTORS IN THE MODERN WORLD
Authors: VAVILOV VS
Citation: Vs. Vavilov, SEMICONDUCTORS IN THE MODERN WORLD, Uspehi fiziceskih nauk, 165(5), 1995, pp. 591-594
THE ION-IMPLANTATION OF IMPURITIES INTO S ILICON SINGLE-CRYSTALS - THE EFFICIENCY OF THIS METHOD AND THE RADIATION-DAMAGE
Authors: VAVILOV VS CHELADINSKY AR
Citation: Vs. Vavilov et Ar. Cheladinsky, THE ION-IMPLANTATION OF IMPURITIES INTO S ILICON SINGLE-CRYSTALS - THE EFFICIENCY OF THIS METHOD AND THE RADIATION-DAMAGE, Uspehi fiziceskih nauk, 165(3), 1995, pp. 347-358
CATHODOLUMINESCENCE OF ZN1-XMNXSE-NI
Authors: VAVILOV VS REZVANOV RR CHUKICHEV VM
Citation: Vs. Vavilov et al., CATHODOLUMINESCENCE OF ZN1-XMNXSE-NI, Inorganic materials, 31(10), 1995, pp. 1190-1191
CATHODOLUMINESCENCE OF CDTEFE
Authors: VAVILOV VS REZVANOV RR CHUKICHEV MV
Citation: Vs. Vavilov et al., CATHODOLUMINESCENCE OF CDTEFE, Semiconductors, 28(5), 1994, pp. 522-523
PROFILE OF IMPURITY LUMINESCENCE BANDS AND PHONON PLASMON MIXING
Authors: VAVILOV VS KLYUKANOV AA CHUKICHEV MV SHAPOVAL OM AVAVDEKH AZ REZVANOV RR
Citation: Vs. Vavilov et al., PROFILE OF IMPURITY LUMINESCENCE BANDS AND PHONON PLASMON MIXING, Semiconductors, 28(12), 1994, pp. 1178-1182
CATHODOLUMINESCENCE SPECTROSCOPY OF DIAMOND FILMS AND CERAMICS
Authors: CHUKICHEV MV JAKOVLEV GD MOKROUSOV SL SIGOV AS VAVILOV VS
Citation: Mv. Chukichev et al., CATHODOLUMINESCENCE SPECTROSCOPY OF DIAMOND FILMS AND CERAMICS, DIAMOND AND RELATED MATERIALS, 3(1-2), 1994, pp. 147-150
THE POSSIBILITIES AND LIMITATIONS OF ION- IMPLANTATION INTO DIAMOND AS COMPARED TO OTHER DOPING TECHNIQUES
Authors: VAVILOV VS
Citation: Vs. Vavilov, THE POSSIBILITIES AND LIMITATIONS OF ION- IMPLANTATION INTO DIAMOND AS COMPARED TO OTHER DOPING TECHNIQUES, Uspehi fiziceskih nauk, 164(4), 1994, pp. 429-433
THE PECULIARITIES OF THE PHYSICS OF WIDE BAND-GAP SEMICONDUCTORS AND THEIR APPLICATIONS
Authors: VAVILOV VS
Citation: Vs. Vavilov, THE PECULIARITIES OF THE PHYSICS OF WIDE BAND-GAP SEMICONDUCTORS AND THEIR APPLICATIONS, Uspehi fiziceskih nauk, 164(3), 1994, pp. 287-296
LONG-RANGE EFFECT IN ION-IMPLANTED GAAS
Authors: ALESHCHENKO YA BOBROVA EA VAVILOV VS VODOPYANOV LK GALKIN GN CHUKICHEV MV RESVANOV RR EUTHYMIOU P KOURKOUTAS C BEKRIS P SOKOLOV SY KUZEMCHENKO TA KHAVROSHIN DL KIV AE
Citation: Ya. Aleshchenko et al., LONG-RANGE EFFECT IN ION-IMPLANTED GAAS, Radiation effects and defects in solids, 125(4), 1993, pp. 323-331
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