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Results:
1-15
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Results: 15
Authors:
FREDERIKSEN JT
MELCHER PG
VEJE E
Citation: Jt. Frederiksen et al., ELECTRICAL BAND-GAP ENERGY OF POROUS SILICON AND THE BAND OFFSETS AT THE POROUS-SILICON CRYSTALLINE-SILICON HETEROJUNCTION MEASURED VERSUS SAMPLE TEMPERATURE/, Physical review. B, Condensed matter, 58(12), 1998, pp. 8020-8024
Authors:
ROMSTAD FP
VEJE E
Citation: Fp. Romstad et E. Veje, EXPERIMENTAL-DETERMINATION OF THE ELECTRICAL BAND-GAP ENERGY OF POROUS SILICON AND THE BAND OFFSETS AT THE POROUS SILICON CRYSTALLINE SILICON HETEROJUNCTION, Physical review. B, Condensed matter, 55(8), 1997, pp. 5220-5225
Authors:
CIORGA M
MISIEWICZ J
TLACZALA M
PANEK M
VEJE E
Citation: M. Ciorga et al., NEW LINES OBSERVED IN PHOTOLUMINESCENCE FROM GAAS GROWN BY MOCVD, Journal of luminescence, 72-4, 1997, pp. 650-651
Authors:
FRELLO T
VEJE E
Citation: T. Frello et E. Veje, TIME-VARYING PHENOMENA IN THE PHOTOELECTRIC PROPERTIES OF POROUS SILICON, Journal of applied physics, 81(10), 1997, pp. 6978-6985
Authors:
ANDERSEN OK
VEJE E
Citation: Ok. Andersen et E. Veje, EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF POROUS SILICON, Physical review. B, Condensed matter, 53(23), 1996, pp. 15643-15652
Authors:
FRELLO T
VEJE E
LEISTIKO O
Citation: T. Frello et al., OBSERVATION OF TIME-VARYING PHOTOCONDUCTIVITY AND PERSISTENT PHOTOCONDUCTIVITY IN POROUS SILICON, Journal of applied physics, 79(2), 1996, pp. 1027-1031
Authors:
FORCHHAMMER T
VEJE E
TIDEMANDPETERSSON P
Citation: T. Forchhammer et al., EXPERIMENTAL-DETERMINATION OF THE CONDUCTION-BAND OFFSET AT GAAS GA1-XALXAS HETEROJUNCTIONS WITH THE USE OF BALLISTIC ELECTRONS/, Physical review. B, Condensed matter, 52(20), 1995, pp. 14693-14698
Authors:
ZHAO QX
HOLTZ PO
HARRIS CI
MONEMAR B
WILLANDER M
VEJE E
Citation: Qx. Zhao et al., THE SHALLOW ACCEPTOR IN THE TRANSITION FROM A 2D TO A QUASI-3D GAAS ALGAAS SYSTEM/, Solid state communications, 93(5), 1995, pp. 469-469
Authors:
ANDERSEN OK
FRELLO T
VEJE E
Citation: Ok. Andersen et al., PHOTOINDUCED SYNTHESIS OF POROUS SILICON WITHOUT ANODIZATION, Journal of applied physics, 78(10), 1995, pp. 6189-6192
Authors:
ZHAO QX
HOLTZ PO
HARRIS CI
MONEMAR B
VEJE E
Citation: Qx. Zhao et al., FREE AND ACCEPTOR-BOUND EXCITONS IN THE TRANSITION REGION BETWEEN 2-DIMENSIONAL AND QUASI-3-DIMENSIONAL GAAS ALXGA1-XAS SYSTEMS, Physical review. B, Condensed matter, 50(3), 1994, pp. 2023-2026
Authors:
GEIM AK
MAIN PC
TABORYSKI R
VEJE E
CARMONA HA
BROWN CV
FOSTER TJ
EAVES L
Citation: Ak. Geim et al., REFLECTION OF BALLISTIC ELECTRONS FROM DIFFUSIVE REGIONS, Physical review. B, Condensed matter, 49(3), 1994, pp. 2265-2268
Authors:
GEIM AK
MAIN PC
TABORYSKI R
CARMONA H
BROWN CV
FOSTER TJ
OAKESHOTT RBS
VEJE E
Citation: Ak. Geim et al., REFLECTION OF BALLISTIC ELECTRONS BY DIFFUSIVE 2-DIMENSIONAL CONTACTS, Solid-state electronics, 37(4-6), 1994, pp. 1005-1009
Authors:
ZHAO QX
HOLTZ PO
HARRIS CI
MONEMAR B
VEJE E
Citation: Qx. Zhao et al., CAPTURE AND RECOMBINATION OF ACCEPTOR-BOUND EXCITONS IN THE TRANSITION REGION FROM A 2-DIMENSIONAL TO A QUASI-3-DIMENSIONAL GAAS ALGAAS SYSTEM/, Applied physics letters, 64(20), 1994, pp. 2721-2723
Authors:
ELALLALI M
SORENSEN CB
VEJE E
Citation: M. Elallali et al., A PHOTOLUMINESCENCE STUDY OF DELTA-DOPED GAAS, Journal de physique. IV, 3(C5), 1993, pp. 299-302
Authors:
ELALLALI M
SORENSEN CB
VEJE E
TIDEMANDPETERSSON P
Citation: M. Elallali et al., EXPERIMENTAL-DETERMINATION OF THE GAAS AND GA1-XALXAS BAND-GAP ENERGY-DEPENDENCE ON TEMPERATURE AND ALUMINUM MOLE FRACTION IN THE DIRECT-BAND-GAP REGION, Physical review. B, Condensed matter, 48(7), 1993, pp. 4398-4404
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