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Results:
1-14
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Results: 14
Authors:
VENABLES D
JAIN H
COLLINS DC
Citation: D. Venables et al., SECONDARY-ELECTRON IMAGING AS A 2-DIMENSIONAL DOPANT PROFILING TECHNIQUE - REVIEW AND UPDATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 362-366
Authors:
NEOGI SS
VENABLES D
NA ZY
MAHER DM
Citation: Ss. Neogi et al., FACTORS AFFECTING 2-DIMENSIONAL DOPANT PROFILES OBTAINED BY TRANSMISSION ELECTRON-MICROSCOPY OF ETCHED P-N-JUNCTIONS IN SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 471-475
Authors:
CAI P
SMITH D
CUNNINGHAM B
BROWNSHIMER S
KATZ B
PEARCE C
VENABLES D
HOUCK D
Citation: P. Cai et al., EPOLONES - NOVEL SESQUITERPENE-TROPOLONES FROM FUNGUS OS-F69284 THAT INDUCE ERYTHROPOIETIN IN HUMAN-CELLS, Journal of natural products, 61(6), 1998, pp. 791-795
Authors:
CAI P
SMITH D
KATZ BL
PEARCE C
VENABLES D
HOUCK D
Citation: P. Cai et al., DESTRUXIN-A4 CHLOROHYDRIN, A NOVEL DESTRUXIN FROM FUNGUS OS-F68576 - ISOLATION, STRUCTURE DETERMINATION, AND BIOLOGICAL-ACTIVITY AS AN INDUCER OF ERYTHROPOIETIN, Journal of natural products, 61(2), 1998, pp. 290-293
Authors:
KRISHNAMOORTHY V
MOLLER K
JONES KS
VENABLES D
JACKSON J
RUBIN L
Citation: V. Krishnamoorthy et al., TRANSIENT ENHANCED DIFFUSION AND DEFECT MICROSTRUCTURE IN HIGH-DOSE, LOW-ENERGY AS+ IMPLANTED SI, Journal of applied physics, 84(11), 1998, pp. 5997-6002
Authors:
JONES KS
CHEN J
BHARATAN S
JACKSON J
RUBIN L
PUGALAMBERS M
VENABLES D
Citation: Ks. Jones et al., THE EFFECT OF DOSE-RATE AND IMPLANT TEMPERATURE ON TRANSIENT ENHANCEDDIFFUSION IN BORON-IMPLANTED SILICON, Journal of electronic materials, 26(11), 1997, pp. 1361-1364
Authors:
VENABLES D
Citation: D. Venables, DANGEROUS DEMOCRACY - NEWS MEDIA POLITICS IN NEW-ZEALAND - MCGREGOR,J, Political science, 48(2), 1997, pp. 245-246
Authors:
NEOGI SS
VENABLES D
MA ZY
MAHER DM
TAYLOR M
CORCORAN S
Citation: Ss. Neogi et al., MAPPING 2-DIMENSIONAL ARSENIC DISTRIBUTIONS IN SILICON USING DOPANT-SELECTIVE CHEMICAL ETCHING TECHNIQUE, Journal of applied physics, 82(11), 1997, pp. 5811-5815
Authors:
VENABLES D
MAHER DM
Citation: D. Venables et Dm. Maher, QUANTITATIVE 2-DIMENSIONAL DOPANT PROFILES OBTAINED DIRECTLY FROM SECONDARY-ELECTRON IMAGES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 421-425
Authors:
AGARWAL A
CHRISTENSEN K
VENABLES D
MAHER DM
ROZGONYI GA
Citation: A. Agarwal et al., OXYGEN GETTERING AND PRECIPITATION AT MEV SI-IMPLANTATION INDUCED DAMAGE IN SILICON( ION), Applied physics letters, 69(25), 1996, pp. 3899-3901
Authors:
BUAUD PP
HU YZ
SPANOS L
IRENE EA
CHRISTENSEN KN
VENABLES D
MAHER DM
Citation: Pp. Buaud et al., A STUDY OF SILICON EPITAXIAL-GROWTH ON SILICON SUBSTRATES EXPOSED TO AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1442-1446
Authors:
BACHMANN KJ
DIETZ N
MILLER AE
VENABLES D
KELLIHER JT
Citation: Kj. Bachmann et al., HETEROEPITAXY OF LATTICE-MATCHED COMPOUND SEMICONDUCTORS ON SILICON, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 696-704
Authors:
DIETZ N
MILLER A
KELLIHER JT
VENABLES D
BACHMANN KJ
Citation: N. Dietz et al., MIGRATION-ENHANCED PULSED CHEMICAL BEAM EPITAXY OF GAP ON SI(001), Journal of crystal growth, 150(1-4), 1995, pp. 691-695
Authors:
LEE JD
PARK JC
VENABLES D
KRAUSE SJ
ROITMAN P
Citation: Jd. Lee et al., STACKING-FAULT PYRAMID FORMATION AND ENERGETICS IN SILICON-ON-INSULATOR MATERIAL FORMED BY MULTIPLE CYCLES OF OXYGEN IMPLANTATION AND ANNEALING, Applied physics letters, 63(24), 1993, pp. 3330-3332
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1-14
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