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Results: 1-9 |
Results: 9
MULTISTEP PROCESS-CONTROL AND CHARACTERIZATION OF SCANNING PROBE LITHOGRAPHY
Authors: PETERSON CA RUSKELL TG PYLE JL WORKMAN RK YAO X HUNT JP SARID D PARKS HG VERMEIRE B
Citation: Ca. Peterson et al., MULTISTEP PROCESS-CONTROL AND CHARACTERIZATION OF SCANNING PROBE LITHOGRAPHY, Applied physics A: Materials science & processing, 66, 1998, pp. 729-733
THE EFFECT OF COPPER CONTAMINATION ON FIELD OVERLAP EDGES AND PERIMETER JUNCTION LEAKAGE CURRENT
Authors: VERMEIRE B LEE L PARKS HG
Citation: B. Vermeire et al., THE EFFECT OF COPPER CONTAMINATION ON FIELD OVERLAP EDGES AND PERIMETER JUNCTION LEAKAGE CURRENT, IEEE transactions on semiconductor manufacturing, 11(2), 1998, pp. 232-238
A COMPARATIVE ELECTRCHEMICAL STUDY OF COPPER DEPOSITION ONTO SILICON FROM DILUTE AND BUFFERED HYDROFLUORIC ACIDS
Authors: LI G KNEER EA VERMEIRE B PARKS HG RAGHAVAN S JEON JS
Citation: G. Li et al., A COMPARATIVE ELECTRCHEMICAL STUDY OF COPPER DEPOSITION ONTO SILICON FROM DILUTE AND BUFFERED HYDROFLUORIC ACIDS, Journal of the Electrochemical Society, 145(1), 1998, pp. 241-246
ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY OF COPPER DEPOSITION ON SILICON FROM DILUTE HYDROFLUORIC-ACID SOLUTIONS
Authors: CHENG X LI G KNEER EA VERMEIRE B PARKS HG RAGHAVAN S JEON JS
Citation: X. Cheng et al., ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY OF COPPER DEPOSITION ON SILICON FROM DILUTE HYDROFLUORIC-ACID SOLUTIONS, Journal of the Electrochemical Society, 145(1), 1998, pp. 352-357
BREAKDOWN AND DEFECT GENERATION IN ULTRATHIN GATE OXIDE
Authors: DEPAS M VERMEIRE B HEYNS MM
Citation: M. Depas et al., BREAKDOWN AND DEFECT GENERATION IN ULTRATHIN GATE OXIDE, Journal of applied physics, 80(1), 1996, pp. 382-387
WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING
Authors: DEPAS M VERMEIRE B MARTENS PW MEURIS M HEYNS MM
Citation: M. Depas et al., WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING, Semiconductor science and technology, 10(6), 1995, pp. 753-758
GROWTH-KINETICS AND ELECTRICAL CHARACTERISTICS OF ULTRA-THIN PYROGENIC SILICON-OXIDE
Authors: DEPAS M VERMEIRE B MERTENS PW HEYNS MM
Citation: M. Depas et al., GROWTH-KINETICS AND ELECTRICAL CHARACTERISTICS OF ULTRA-THIN PYROGENIC SILICON-OXIDE, Microelectronic engineering, 28(1-4), 1995, pp. 125-128
DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI SIO2/SI STRUCTURES/
Authors: DEPAS M VERMEIRE B MERTENS PW VANMEIRHAEGHE RL HEYNS MM
Citation: M. Depas et al., DETERMINATION OF TUNNELING PARAMETERS IN ULTRA-THIN OXIDE LAYER POLY-SI SIO2/SI STRUCTURES/, Solid-state electronics, 38(8), 1995, pp. 1465-1471
ATOMIC-FORCE MICROSCOPY AND INFRARED-SPECTROSCOPY STUDIES OF HYDROGENBAKED SI SURFACES
Authors: VATEL O VERHAVERBEKE S BENDER H CAYMAX M CHOLLET F VERMEIRE B MERTENS P ANDRE E HEYNS M
Citation: O. Vatel et al., ATOMIC-FORCE MICROSCOPY AND INFRARED-SPECTROSCOPY STUDIES OF HYDROGENBAKED SI SURFACES, JPN J A P 2, 32(10B), 1993, pp. 120001489-120001491
Risultati: 1-9 |