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Results:
1-7
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Results: 7
Authors:
TEICHERT J
VOELSKOW M
BISCHOFF L
HAUSMANN S
Citation: J. Teichert et al., RES AND CHANNELING ANALYSIS OF COBALT DISILICIDE LAYERS PRODUCED BY FOCUSED ION-BEAM IMPLANTATION, Vacuum, 51(2), 1998, pp. 261-266
Authors:
HAUSMANN S
BISCHOFF L
TEICHERT J
VOELSKOW M
GRAMBOLE D
HERRMANN F
MOLLER W
Citation: S. Hausmann et al., DOSE-RATE EFFECTS IN FOCUSED ION-BEAM SYNTHESIS OF COBALT DISILICIDE, Applied physics letters, 72(21), 1998, pp. 2719-2721
Authors:
YANKOV RA
VOELSKOW M
KREISSIG W
KULIKOV DV
PEZOLDT J
SKORUPA W
TRUSHIN YV
KHARLAMOV VS
TSIGANKOV DN
Citation: Ra. Yankov et al., HIGH-TEMPERATURE HIGH-DOSE IMPLANTATION OF N-SIC( AND AL+ IONS IN 6H), Technical physics letters, 23(8), 1997, pp. 617-620
Authors:
KALITZOVA M
SIMOV S
YANKOV RA
ANGELOV C
VITALI G
ROSSI M
PIZZUTO C
ZOLLO G
FAURE J
KILLIAN L
BONHOMME P
VOELSKOW M
Citation: M. Kalitzova et al., AMORPHIZATION AND CRYSTALLIZATION IN HIGH-DOSE ZN-IMPLANTED SILICON(), Journal of applied physics, 81(3), 1997, pp. 1143-1149
Authors:
HEERA V
PROKERT F
SCHELL N
SEIFARTH H
FUKAREK W
VOELSKOW M
SKORUPA W
Citation: V. Heera et al., DENSITY AND STRUCTURAL-CHANGES IN SIC AFTER AMORPHIZATION AND ANNEALING, Applied physics letters, 70(26), 1997, pp. 3531-3533
Authors:
PACAUD Y
STOEMENOS J
BRAUER G
YANKOV RA
HEERA V
VOELSKOW M
KOGLER R
SKORUPA W
Citation: Y. Pacaud et al., RADIATION-DAMAGE AND ANNEALING BEHAVIOR OF GE-IMPLANTED SIC(), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 177-180
Authors:
WEISHART H
STEFFEN HJ
MATZ W
VOELSKOW M
SKORUPA W
Citation: H. Weishart et al., ION-BEAM SYNTHESIS BY TUNGSTEN-IMPLANTATION INTO 6H-SILICON CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 338-341
Risultati:
1-7
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