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Results:
1-22
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Results: 22
Authors:
SURNEV S
ARENHOLD K
COENEN P
VOIGTLANDER B
BONZEL HP
WYNBLATT P
Citation: S. Surnev et al., SCANNING-TUNNELING-MICROSCOPY OF EQUILIBRIUM CRYSTAL SHAPES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1059-1065
Authors:
VOIGTLANDER B
KASTNER M
SMILAUER P
Citation: B. Voigtlander et al., MAGIC ISLANDS IN SI SI(111) HOMOEPITAXY, Physical review letters, 81(4), 1998, pp. 858-861
Authors:
VOIGTLANDER B
BONZEL HP
IBACH H
Citation: B. Voigtlander et al., DYNAMICAL STM STUDIES OF THE GROWTH OF SILICON AND GERMANIUM ON SILICON, Zeitschrift für physikalische Chemie, 198, 1997, pp. 189-203
Authors:
SURNEV S
COENEN P
VOIGTLANDER B
BONZEL HP
WYNBLATT P
Citation: S. Surnev et al., FLATNESS AND SHAPE OF (111) FACETS OF EQUILIBRATED PB CRYSTALS, Physical review. B, Condensed matter, 56(19), 1997, pp. 12131-12134
Authors:
VOIGTLANDER B
SCHEUCH V
BONZEL HP
HEINZE S
BLUGEL S
Citation: B. Voigtlander et al., CHEMICAL-IDENTIFICATION OF ATOMS AT MULTICOMPONENT SURFACES ON AN ATOMIC-SCALE - COSI2(100), Physical review. B, Condensed matter, 55(20), 1997, pp. 13444-13447
Authors:
SCHEUCH V
VOIGTLANDER B
BONZEL HP
Citation: V. Scheuch et al., SURFACTANT-MEDIATED GROWTH OF COSI2 ON SI(100), Surface science, 381(1), 1997, pp. 546-550
Authors:
SCHEUCH V
VOIGTLANDER B
BONZEL HP
Citation: V. Scheuch et al., NUCLEATION AND GROWTH OF COSI2 ON SI(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Surface science, 372(1-3), 1997, pp. 71-82
Authors:
VOIGTLANDER B
WEBER T
SMILAUER P
WOLF DE
Citation: B. Voigtlander et al., TRANSITION FROM ISLAND GROWTH TO STEP-FLOW GROWTH FOR SI SI(100) EPITAXY/, Physical review letters, 78(11), 1997, pp. 2164-2167
Authors:
VOIGTLANDER B
KASTNER M
Citation: B. Voigtlander et M. Kastner, IN-VIVO STM STUDIES OF THE GROWTH OF GERMANIUM AND SILICON ON SILICON, Applied physics A: Materials science & processing, 63(6), 1996, pp. 577-581
Authors:
ANDERSOHN L
BERKE T
KOHLER U
VOIGTLANDER B
Citation: L. Andersohn et al., NUCLEATION BEHAVIOR IN MOLECULAR-BEAM AND CHEMICAL-VAPOR-DEPOSITION OF SILICON ON SI(111)-(7X7), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 312-318
Authors:
VOIGTLANDER B
WEBER T
Citation: B. Voigtlander et T. Weber, NUCLEATION AND GROWTH OF SI SI(111) OBSERVED BY SCANNING-TUNNELING-MICROSCOPY DURING EPITAXY/, Physical review. B, Condensed matter, 54(11), 1996, pp. 7709-7712
Authors:
SURNEV S
VOIGTLANDER B
BONZEL HP
MULLINS WW
Citation: S. Surnev et al., ANISOTROPIC PROFILE DECAY ON PERTURBED AU(111) VICINAL SURFACES, Surface science, 360(1-3), 1996, pp. 242-248
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, STRUCTURE OF THE STRANSKI-KRASTANOV LAYER IN SURFACTANT-MEDIATED SB GE/SI(111) EPITAXY/, Surface science, 351(1-3), 1996, pp. 233-238
Authors:
VOIGTLANDER B
ZINNER A
WEBER T
Citation: B. Voigtlander et al., HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY DURING MOLECULAR-BEAM EPITAXY, Review of scientific instruments, 67(7), 1996, pp. 2568-2572
Authors:
VOIGTLANDER B
WEBER T
Citation: B. Voigtlander et T. Weber, GROWTH-PROCESSES IN SI SI(111) EPITAXY OBSERVED BY SCANNING-TUNNELING-MICROSCOPY DURING EPITAXY/, Physical review letters, 77(18), 1996, pp. 3861-3864
Authors:
VOIGTLANDER B
ZINNER A
WEBER T
BONZEL HP
Citation: B. Voigtlander et al., MODIFICATION OF GROWTH-KINETICS IN SURFACTANT-MEDIATED EPITAXY, Physical review. B, Condensed matter, 51(12), 1995, pp. 7583-7591
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, SURFACTANT-MEDIATED EPITAXY OF GE ON SI(111) - THE ROLE OF KINETICS AND CHARACTERIZATION OF THE GE LAYERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1932-1937
Authors:
HERION J
SIEKMANN H
VOIGTLANDER B
VESCAN L
Citation: J. Herion et al., SECONDARY-ION MASS-SPECTROMETRY OF SIGE STRUCTURES GROWN BY SURFACTANT-MEDIATED EPITAXY AND BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Surface and interface analysis, 22(1-12), 1994, pp. 342-345
Authors:
SCHEUCH V
POTTHAST K
VOIGTLANDER B
BONZEL HP
Citation: V. Scheuch et al., INVESTIGATION OF THE GROWTH OF CO ON CU(111) AND SB CU(111) USING PHOTOELECTRON FORWARD SCATTERING/, Surface science, 318(1-2), 1994, pp. 115-128
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, INFLUENCE OF SURFACE REACTANTS ON THE GROWTH-KINETICS OF SI ON SI(111) (VOL 292, PG L 775, 1993), Surface science, 297(2), 1993, pp. 120000091-120000091
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, INFLUENCE OF SURFACTANTS ON THE GROWTH-KINETICS OF SI ON SI(111), Surface science, 292(1-2), 1993, pp. 120000775-120000780
Authors:
VOIGTLANDER B
ZINNER A
Citation: B. Voigtlander et A. Zinner, SIMULTANEOUS MOLECULAR-BEAM EPITAXY GROWTH AND SCANNING-TUNNELING-MICROSCOPY IMAGING DURING GE SI EPITAXY/, Applied physics letters, 63(22), 1993, pp. 3055-3057
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