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Results: 1-11 |
Results: 11
SPECIFIC-HEAT OF SINGLE-CRYSTALLINE, POLYCRYSTALLINE AND NANOCRYSTALLINE DIAMOND
Authors: MOELLE C WERNER M SZUCS F WITTORF D SELLSCHOPP M VONBORANY J FECHT HJ JOHNSTON C
Citation: C. Moelle et al., SPECIFIC-HEAT OF SINGLE-CRYSTALLINE, POLYCRYSTALLINE AND NANOCRYSTALLINE DIAMOND, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 499-503
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE
Authors: REBOHLE L VONBORANY J GROTZSCHEL R MARKWITZ A SCHMIDT B TYSCHENKO IE SKORUPA W FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGE-IMPLANTED AND SI-IMPLANTED SILICON DIOXIDE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 31-35
XTEM ANALYSIS OF GE NANOCLUSTERS IN THIN SIO2 LAYERS
Authors: MARKWITZ A MUCKLICH A VONBORANY J MATZ W SKORUPA W SCHMIDT B MOLLER W
Citation: A. Markwitz et al., XTEM ANALYSIS OF GE NANOCLUSTERS IN THIN SIO2 LAYERS, European journal of cell biology, 74, 1997, pp. 122-122
BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS()
Authors: REBOHLE L TYSCHENKO IE FROB H LEO K YANKOV RA VONBORANY J KACHURIN GA SKORUPA W
Citation: L. Rebohle et al., BLUE AND VIOLET PHOTOLUMINESCENCE FROM HIGH-DOSE SI-IMPLANTED AND GE+-IMPLANTED SILICON DIOXIDE LAYERS(), Microelectronic engineering, 36(1-4), 1997, pp. 107-110
MULTIMODAL IMPURITY REDISTRIBUTION AND NANOCLUSTER FORMATION IN GE IMPLANTED SILICON DIOXIDE FILMS
Authors: VONBORANY J GROTZSCHEL R HEINIG KH MARKWITZ A MATZ W SCHMIDT B SKORUPA W
Citation: J. Vonborany et al., MULTIMODAL IMPURITY REDISTRIBUTION AND NANOCLUSTER FORMATION IN GE IMPLANTED SILICON DIOXIDE FILMS, Applied physics letters, 71(22), 1997, pp. 3215-3217
STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS
Authors: REBOHLE L VONBORANY J YANKOV RA SKORUPA W TYSCHENKO IE FROB H LEO K
Citation: L. Rebohle et al., STRONG BLUE AND VIOLET PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROMGERMANIUM-IMPLANTED AND SILICON-IMPLANTED SILICON-DIOXIDE LAYERS, Applied physics letters, 71(19), 1997, pp. 2809-2811
THE APPLICATION OF HIGH-ENERGY ION-IMPLANTATION FOR SILICON RADIATIONDETECTORS
Authors: VONBORANY J SCHMIDT B GROTZSCHEL R
Citation: J. Vonborany et al., THE APPLICATION OF HIGH-ENERGY ION-IMPLANTATION FOR SILICON RADIATIONDETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 514-520
PREPARATION AND CHARACTERIZATION OF ULTRATHIN CRYSTALLINE SILICON MEMBRANES
Authors: SCHMIDT B VONBORANY J TODT U ERLEBACH A
Citation: B. Schmidt et al., PREPARATION AND CHARACTERIZATION OF ULTRATHIN CRYSTALLINE SILICON MEMBRANES, Sensors and actuators. A, Physical, 42(1-3), 1994, pp. 689-694
ELECTRICAL EFFECTS OF RESIDUAL DEFECTS IN SI AFTER HIGH-ENERGY IMPLANTATION OF GE+ IONS AND ANNEALING
Authors: KOGLER R VONBORANY J PANKNIN D SKORUPA W
Citation: R. Kogler et al., ELECTRICAL EFFECTS OF RESIDUAL DEFECTS IN SI AFTER HIGH-ENERGY IMPLANTATION OF GE+ IONS AND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 350-353
PHYSICAL ASPECTS OF PRECISE SPECTROMETRY OF ALPHA-PARTICLES WITH SILICON PN-JUNCTION DETECTORS
Authors: VERBITSKAYA E EREMIN V STROKAN N KEMMER J SCHMIDT B VONBORANY J
Citation: E. Verbitskaya et al., PHYSICAL ASPECTS OF PRECISE SPECTROMETRY OF ALPHA-PARTICLES WITH SILICON PN-JUNCTION DETECTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(1), 1994, pp. 51-61
PRECISION SEMICONDUCTOR SPECTROMETRY OF IONS
Authors: VERBITSKAYA EM EREMIN VK MALYARENKO AM STROKAN NB SUKHANOV VL SCHMIDT B VONBORANY J
Citation: Em. Verbitskaya et al., PRECISION SEMICONDUCTOR SPECTROMETRY OF IONS, Semiconductors, 27(11-12), 1993, pp. 1127-1136
Risultati: 1-11 |