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Results: 1-7 |
Results: 7
HIGH-FIELD AND HIGH-TEMPERATURE STRESS OF N-SIC MOS CAPACITORS
Authors: BANO E OUISSE T LEONHARD C GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD AND HIGH-TEMPERATURE STRESS OF N-SIC MOS CAPACITORS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1489-1493
PASSIVATION OF INTERFACE TRAPS IN MOS-DEVICES ON N-TYPE AND P-TYPE 6H-SIC
Authors: VONKAMIENSKI EGS LEONHARD C SCHARNHOLZ S GOLZ A KURZ H
Citation: Egs. Vonkamienski et al., PASSIVATION OF INTERFACE TRAPS IN MOS-DEVICES ON N-TYPE AND P-TYPE 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1497-1499
LONG-TERM STABILITY OF GATE-OXIDES ON N-TYPE AND P-TYPE SILICON-CARBIDE STUDIED BY CHARGE INJECTION TECHNIQUES
Authors: VONKAMIENSKI EGS LEONHARD C PORTHEINE F GOLZ A KURZ H
Citation: Egs. Vonkamienski et al., LONG-TERM STABILITY OF GATE-OXIDES ON N-TYPE AND P-TYPE SILICON-CARBIDE STUDIED BY CHARGE INJECTION TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 263-266
HIGH-FIELD FOWLER-NORDHEIM STRESS OF N-TYPE SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: BANO E OUISSE T LEONHARD C GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., HIGH-FIELD FOWLER-NORDHEIM STRESS OF N-TYPE SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Semiconductor science and technology, 12(5), 1997, pp. 525-528
ANALYTICAL MODELING OF THERMALLY-ACTIVATED TRANSPORT IN SIC INVERSION-LAYERS
Authors: BANO E OUISSE T SCHARNHOLZ SP GOLZ A VONKAMIENSKI EGS
Citation: E. Bano et al., ANALYTICAL MODELING OF THERMALLY-ACTIVATED TRANSPORT IN SIC INVERSION-LAYERS, Electronics Letters, 33(3), 1997, pp. 243-245
CHARGE TRAPPING IN DRY AND WET OXIDES ON N-TYPE 6H-SIC STUDIED BY FOWLER-NORDHEIM CHARGE INJECTION
Authors: VONKAMIENSKI EGS PORTHEINE F STEIN J GOLZ A KURZ H
Citation: Egs. Vonkamienski et al., CHARGE TRAPPING IN DRY AND WET OXIDES ON N-TYPE 6H-SIC STUDIED BY FOWLER-NORDHEIM CHARGE INJECTION, Journal of applied physics, 79(5), 1996, pp. 2529-2534
AL-SIO2-AL SANDWICH MICROSTRIP LINES FOR HIGH-FREQUENCY ON-CHIP INTERCONNECTS
Authors: GONDERMANN J VONKAMIENSKI EGS ROSKOS HG KURZ H
Citation: J. Gondermann et al., AL-SIO2-AL SANDWICH MICROSTRIP LINES FOR HIGH-FREQUENCY ON-CHIP INTERCONNECTS, IEEE transactions on microwave theory and techniques, 41(12), 1993, pp. 2087-2091
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