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Results: 1-11 |
Results: 11
ANALYSIS OF THE VARIATION IN THE COMPOSITION AS A FUNCTION OF GROWTH-PARAMETERS IN THE MBE GROWTH OF INDIUM-DOPED HG1-XCDXTE
Authors: VYDYANATH HR AQARIDEN F WIJEWARNASURIYA PS SIVANATHAN S CHAMBERS G BECKER L
Citation: Hr. Vydyanath et al., ANALYSIS OF THE VARIATION IN THE COMPOSITION AS A FUNCTION OF GROWTH-PARAMETERS IN THE MBE GROWTH OF INDIUM-DOPED HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 504-506
OBSERVATION OF PREVALENCE OF QUASI-EQUILIBRIUM IN THE MBE GROWTH OF HG1-XCDXTE
Authors: VYDYANATH HR AQARIDEN F WIJEWARNASURIYA PS SIVANANTHAN S NATHAN V
Citation: Hr. Vydyanath et al., OBSERVATION OF PREVALENCE OF QUASI-EQUILIBRIUM IN THE MBE GROWTH OF HG1-XCDXTE, Journal of electronic materials, 27(6), 1998, pp. 507-509
MODE OF ARSENIC INCORPORATION IN HGCDTE GROWN BY MBE
Authors: SIVANANTHAN S WIJEWARNASURIYA PS AQARIDEN F VYDYANATH HR ZANDIAN M EDWALL DD ARIAS JM
Citation: S. Sivananthan et al., MODE OF ARSENIC INCORPORATION IN HGCDTE GROWN BY MBE, Journal of electronic materials, 26(6), 1997, pp. 621-624
COMPARISON OF TRIMETHYLGALLIUM AND TRIETHYLGALLIUM FOR THE GROWTH OF GAN
Authors: SAXLER A WALKER D KUNG P ZHANG X RAZEGHI M SOLOMON J MITCHEL WC VYDYANATH HR
Citation: A. Saxler et al., COMPARISON OF TRIMETHYLGALLIUM AND TRIETHYLGALLIUM FOR THE GROWTH OF GAN, Applied physics letters, 71(22), 1997, pp. 3272-3274
ANNEALING STUDIES OF UNDOPED HG1-XMNXTE BULK CRYSTALS AT HIGH-TEMPERATURES
Authors: KUTCHER SW POEHLER TO TRIVEDI S YU ZC VYDYANATH HR BECLA P
Citation: Sw. Kutcher et al., ANNEALING STUDIES OF UNDOPED HG1-XMNXTE BULK CRYSTALS AT HIGH-TEMPERATURES, Journal of electronic materials, 25(8), 1996, pp. 1383-1387
INCORPORATION OF DOPANTS AND NATIVE DEFECTS IN BULK HG1-XCDX TE CRYSTALS AND EPITAXIAL LAYERS
Authors: VYDYANATH HR
Citation: Hr. Vydyanath, INCORPORATION OF DOPANTS AND NATIVE DEFECTS IN BULK HG1-XCDX TE CRYSTALS AND EPITAXIAL LAYERS, Journal of crystal growth, 161(1-4), 1996, pp. 64-72
STATUS OF TE-RICH AND HG-RICH LIQUID-PHASE EPITAXIAL TECHNOLOGIES FORTHE GROWTH OF (HG,CD)TE ALLOYS
Authors: VYDYANATH HR
Citation: Hr. Vydyanath, STATUS OF TE-RICH AND HG-RICH LIQUID-PHASE EPITAXIAL TECHNOLOGIES FORTHE GROWTH OF (HG,CD)TE ALLOYS, Journal of electronic materials, 24(9), 1995, pp. 1275-1285
ANNEALING EXPERIMENTS IN HEAVILY ARSENIC-DOPED (HG,CD)TE
Authors: VYDYANATH HR LICHTMANN LS SIVANANTHAN S WIJEWARNASURIYA PS FAURIE JP
Citation: Hr. Vydyanath et al., ANNEALING EXPERIMENTS IN HEAVILY ARSENIC-DOPED (HG,CD)TE, Journal of electronic materials, 24(5), 1995, pp. 625-634
ELECTRICAL CHARACTERIZATION OF HG1-XCDXTE ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.58) GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: HAHN SR PARSONS JD ELLSWORTH JA VYDYANATH HR
Citation: Sr. Hahn et al., ELECTRICAL CHARACTERIZATION OF HG1-XCDXTE ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.58) GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of applied physics, 76(1), 1994, pp. 385-389
VAPOR-PHASE EQUILIBRIA IN THE CD1-XZNXTE ALLOY SYSTEM
Authors: VYDYANATH HR ELLSWORTH JA FISHER RF KENNEDY JJ JOHNSON CJ NEUGEBAUER GT
Citation: Hr. Vydyanath et al., VAPOR-PHASE EQUILIBRIA IN THE CD1-XZNXTE ALLOY SYSTEM, Journal of electronic materials, 22(8), 1993, pp. 1067-1071
THERMOMIGRATION OF TE PRECIPITATES AND IMPROVEMENT OF (CD,ZN)TE SUBSTRATE CHARACTERISTICS FOR THE FABRICATION OF LWIR (HG,CD)TE PHOTODIODES
Authors: VYDYANATH HR ELLSWORTH JA PARKINSON JB KENNEDY JJ DEAN B JOHNSON CJ NEUGEBAUER GT SEPICH J LIAO PK
Citation: Hr. Vydyanath et al., THERMOMIGRATION OF TE PRECIPITATES AND IMPROVEMENT OF (CD,ZN)TE SUBSTRATE CHARACTERISTICS FOR THE FABRICATION OF LWIR (HG,CD)TE PHOTODIODES, Journal of electronic materials, 22(8), 1993, pp. 1073-1080
Risultati: 1-11 |