AAAAAA

   
Results: 1-12 |
Results: 12

Authors: Starikov, E Shiktorov, P Gruzinskis, V Reggiani, L Varani, L Vaissiere, JC Zhao, JH
Citation: E. Starikov et al., Monte Carlo simulation of terahertz generation in nitrides, J PHYS-COND, 13(32), 2001, pp. 7159-7168

Authors: Amechnoue, K Diyadi, J Hlou, L Vaissiere, JC Varani, L Aboubacar, M Moatadid, A
Citation: K. Amechnoue et al., Monte Carlo simulation by scattered packet for semiclassical transport in semiconductors: Application to holes in silicon, PHYS ST S-B, 223(3), 2001, pp. 657-663

Authors: Starikov, E Shiktorov, P Gruzinskis, V Reggiani, L Varani, L Vaissiere, JC Zhao, JH
Citation: E. Starikov et al., Monte Carlo simulation of the generation of terahertz radiation in GaN, J APPL PHYS, 89(2), 2001, pp. 1161-1171

Authors: Starikov, E Shiktorov, P Gruzinskis, V Reggiani, L Varani, L Vaissiere, JC Zhao, JH
Citation: E. Starikov et al., Monte Carlo simulation of THz maser based on optical phonon transit time resonance in GaN, IEEE DEVICE, 48(3), 2001, pp. 438-443

Authors: Bulashenko, OM Gaubert, P Varani, L Vaissiere, JC Nougier, JP
Citation: Om. Bulashenko et al., Impedance field and noise of submicrometer n(+)nn(+) diodes: Analytical approach, J APPL PHYS, 88(8), 2000, pp. 4709-4716

Authors: Hlou, L Amechnoue, K Diyadi, J Vaissiere, JC Varani, L Moatadid, A
Citation: L. Hlou et al., Correlation functions from multiple solution of the transient Boltzmann equation in semiconductors: Application to noise temperature of holes in silicon, J APPL PHYS, 88(2), 2000, pp. 838-841

Authors: Shiktorov, P Starikov, E Gruzinskis, V Gonzalez, T Mateos, J Pardo, D Reggiani, L Varani, L Vaissiere, JC
Citation: P. Shiktorov et al., Langevin forces and generalized transfer fields for noise modeling in deepsubmicron devices, IEEE DEVICE, 47(10), 2000, pp. 1992-1998

Authors: Varani, L Gaubert, P Vaissiere, JC Nougier, JP Mateos, J Gonzalez, T Pardo, D Reggiani, L Starikov, E Shiktorov, P Gruzhinskis, V
Citation: L. Varani et al., Thermal conductivity of nonequilibrium carriers, PHYSICA B, 272(1-4), 1999, pp. 247-249

Authors: Starikov, E Shiktorov, P Gruzinskis, V Reggiani, L Varani, L Vaissiere, JC Nougier, JP Gonzalez, T Mateos, J Pardo, D
Citation: E. Starikov et al., Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices, PHYSICA B, 272(1-4), 1999, pp. 260-262

Authors: Katilius, R Liberis, J Matulionis, A Raguotis, R Sakaias, P Nougier, JP Vaissiere, JC Varani, L Rota, L
Citation: R. Katilius et al., Noise and electron diffusion in doped n-type GaAs at heating electric fields, PHYS REV B, 60(16), 1999, pp. 11487-11493

Authors: Bonani, F Ghione, G Houlet, P Varani, L Aboubacar, M Vaissiere, JC Nougier, JP Starikov, E Gruzinskis, V Shiktorov, P
Citation: F. Bonani et al., Evaluating the impedance field through several transport models: A comparison, J APPL PHYS, 85(4), 1999, pp. 2192-2196

Authors: Shiktorov, P Starikov, E Gruzinskis, V Gonzalez, T Mateos, J Pardo, D Reggiani, L Varani, L Vaissiere, JC Nougier, JP
Citation: P. Shiktorov et al., Spatiotemporal correlation of conduction current fluctuations within a hydrodynamic-Langevin scheme, APPL PHYS L, 74(5), 1999, pp. 723-725
Risultati: 1-12 |