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Results: 1-10 |
Results: 10
Structural transformations and silicon nanocrystallite formation in SiOx films
Authors: Bratus', VY Yukhimchuk, VA Berezhinsky, LI Valakh, MY Vorona, IP Indutnyi, IZ Petrenko, TT Shepeliavyi, PE Yanchuk, IB
Citation: Vy. Bratus' et al., Structural transformations and silicon nanocrystallite formation in SiOx films, SEMICONDUCT, 35(7), 2001, pp. 821-826
The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures
Authors: Vostokov, NV Gusev, SA Drozdov, YN Krasilnik, ZF Lobanov, DN Mesters, N Miura, M Moldavskaya, LD Novikov, AV Pascual, J Postnikov, VV Shiraki, Y Uakhimchuk, VA Usami, N Valakh, MY
Citation: Nv. Vostokov et al., The relation between composition and sizes of GeSi/Si(001) islands grown at different temperatures, PHYS LOW-D, 3-4, 2001, pp. 295-301
Intensity dependence of the Fermi edge singularity in photoluminescence from modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures
Authors: Kissel, H Muller, U Walther, C Masselink, WT Mazur, YI Tarasov, GG Rud'ko, GY Valakh, MY Malyarchuk, V Zhuchenko, ZY
Citation: H. Kissel et al., Intensity dependence of the Fermi edge singularity in photoluminescence from modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures, PHYS REV B, 61(12), 2000, pp. 8359-8362
Thickness dependence of disorder in pseudomorphic modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures
Authors: Kunets, VP Kissel, H Muller, U Walther, C Masselink, WT Mazur, YI Tarasov, GG Zhuchenko, ZY Lavoric, S Valakh, MY
Citation: Vp. Kunets et al., Thickness dependence of disorder in pseudomorphic modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures, SEMIC SCI T, 15(11), 2000, pp. 1035-1038
Micro-Raman study of high pressure induced graphite-diamond phase-structural transformation: The role of a nitrogen containing precursor
Authors: Klyui, NI Valakh, MY Pascual, J Mestres, N Petrusha, IA Zaika, NI
Citation: Ni. Klyui et al., Micro-Raman study of high pressure induced graphite-diamond phase-structural transformation: The role of a nitrogen containing precursor, J APPL PHYS, 88(8), 2000, pp. 4875-4880
Effect of oxygen on ion-beam induced synthesis of SiC in silicon
Authors: Artamonov, VV Valakh, MY Klyui, NI Melnik, VP Romanyuk, AB Romanyuk, BN Yuhimchuk, VA
Citation: Vv. Artamonov et al., Effect of oxygen on ion-beam induced synthesis of SiC in silicon, NUCL INST B, 147(1-4), 1999, pp. 256-260
Anharmonic effects and temperature dependence of the lattice spectra of ferroelectric crystals A(3)B(2)C(9)
Authors: Yaremko, AM Valakh, MY Trylis, OV Baran, J Marchewka, MK Ratajczak, H
Citation: Am. Yaremko et al., Anharmonic effects and temperature dependence of the lattice spectra of ferroelectric crystals A(3)B(2)C(9), J MOL STRUC, 512, 1999, pp. 57-68
Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers
Authors: Valakh, MY Yukhimchuk, VA Bratus, VY Konchits, AA Hemment, PLF Komoda, T
Citation: My. Valakh et al., Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers, J APPL PHYS, 85(1), 1999, pp. 168-173
Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon
Authors: Artamanov, VV Valakh, MY Klyui, NI Mel'nik, VP Romanyuk, AB Romanyuk, BN Yukhimchuk, VA
Citation: Vv. Artamanov et al., Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon, SEMICONDUCT, 32(12), 1998, pp. 1261-1265
Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers
Authors: Bratus, VY Valakh, MY Vorona, IP Petrenko, TT Yukhimchuk, VA Hemment, PLF Komoda, T
Citation: Vy. Bratus et al., Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers, J LUMINESC, 80(1-4), 1998, pp. 269-273
Risultati: 1-10 |