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Results: 24
Authors:
Hens, S
Van Landuyt, J
Bender, H
Boullart, W
Vanhaelemeersch, S
Citation: S. Hens et al., Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy, MAT SC S PR, 4(1-3), 2001, pp. 109-111
Authors:
Stuer, C
Van Landuyt, J
Bender, H
Rooyackers, R
Badenes, G
Citation: C. Stuer et al., The use of convergent beam electron diffraction for stress measurements inshallow trench isolation structures, MAT SC S PR, 4(1-3), 2001, pp. 117-119
Authors:
Van Renterghem, W
Goessens, C
Schryver, D
Van Landuyt, J
Bollen, D
De Keyzer, R
Van Roost, C
Citation: W. Van Renterghem et al., Influence of twinning on the morphology of AgBr and AgCl microcrystals, J IMAG SC T, 45(4), 2001, pp. 349-356
Authors:
Van Renterghem, W
Schryvers, D
Van Landuyt, J
Bollen, D
Van Roost, C
De Keyzer, R
Citation: W. Van Renterghem et al., A TEM study of non-parallel twins inducing thickness growth in silver chloride {111} tabular crystals, J IMAG SC T, 45(1), 2001, pp. 83-90
Authors:
Ghica, C
Nistor, L
Bender, H
Steegen, A
Lauwers, A
Maex, K
Van Landuyt, J
Citation: C. Ghica et al., In situ transmission electron microscopy study of the silicidation processin Co thin films on patterned (001) Si substrates, J MATER RES, 16(3), 2001, pp. 701-708
Authors:
Teodorescu, VS
Nistor, LC
Popescu, M
Mihailescu, IN
Gyorgy, E
Van Landuyt, J
Perrone, A
Citation: Vs. Teodorescu et al., Transmission electron microscopy study of silicon nitride amorphous films obtained by reactive pulsed laser deposition, THIN SOL FI, 397(1-2), 2001, pp. 12-16
Authors:
Ranjan, R
Pandey, D
Schuddinck, W
Richard, O
De Meulenaere, P
Van Landuyt, J
Van Tendeloo, G
Citation: R. Ranjan et al., Evolution of crystallographic phases in (Sr1-xCax)TiO3 with composition (x), J SOL ST CH, 162(1), 2001, pp. 20-28
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines
Authors:
Teodorescu, V
Nistor, L
Bender, H
Steegen, A
Lauwers, A
Maex, K
Van Landuyt, J
Citation: V. Teodorescu et al., In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines, J APPL PHYS, 90(1), 2001, pp. 167-174
Authors:
Stuer, C
Van Landuyt, J
Bender, H
De Wolf, I
Rooyackers, R
Badenes, G
Citation: C. Stuer et al., Investigation by convergent beam electron diffraction of the stress aroundshallow trench isolation structures, J ELCHEM SO, 148(11), 2001, pp. G597-G601
Authors:
Fedina, L
Lebedev, OI
Van Tendeloo, G
Van Landuyt, J
Mironov, OA
Parker, EHC
Citation: L. Fedina et al., In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures, PHYS REV B, 61(15), 2000, pp. 10336-10345
Authors:
Vantomme, A
Wu, MF
Hogg, S
Langouche, G
Jacobs, K
Moerman, I
White, ME
O'Donnell, KP
Nistor, L
Van Landuyt, J
Bender, H
Citation: A. Vantomme et al., Comparative study of structural properties and photoluminescence in InGaN layers with a high In content, MRS I J N S, 5, 2000, pp. NIL_604-NIL_609
Authors:
Nistor, L
Buschmann, V
Ralchenko, V
Dinca, G
Vlasov, I
Van Landuyt, J
Fuess, H
Citation: L. Nistor et al., Microstructural characterization of diamond films deposited on c-BN crystals, DIAM RELAT, 9(3-6), 2000, pp. 269-273
Authors:
Ferroni, M
Carotta, MC
Guidi, V
Martinelli, G
Ronconi, F
Richard, O
Van Dyck, D
Van Landuyt, J
Citation: M. Ferroni et al., Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application, SENS ACTU-B, 68(1-3), 2000, pp. 140-145
Authors:
Nistor, L
Bender, H
Vantomme, A
Wu, MF
Van Landuyt, J
O'Donnell, KP
Martin, R
Jacobs, K
Moerman, I
Citation: L. Nistor et al., Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer, APPL PHYS L, 77(4), 2000, pp. 507-509
Authors:
Li, H
Bender, H
Conard, T
Maex, K
Gutakovskii, A
Van Landuyt, J
Froyen, L
Citation: H. Li et al., Interaction of a Ti-capped Co thin film with Si3N4, APPL PHYS L, 77(26), 2000, pp. 4307-4309
Authors:
Ahenach, J
Cool, P
Vansant, E
Lebedev, O
Van Landuyt, J
Citation: J. Ahenach et al., Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane, PCCP PHYS C, 1(15), 1999, pp. 3703-3708
Authors:
Mihailescu, IN
Gyorgy, E
Marin, G
Popescu, M
Teodorescu, VS
Van Landuyt, J
Grivas, C
Hatziapostolou, A
Citation: In. Mihailescu et al., Crystalline structure of very hard tungsten carbide thin films obtained byreactive pulsed laser deposition, J VAC SCI A, 17(1), 1999, pp. 249-255
Authors:
De Gryse, O
Clauws, P
Rossou, L
Van Landuyt, J
Vanhellemont, J
Citation: O. De Gryse et al., Accurate infrared absorption measurement of interstitial and precipitated oxygen in p(+) silicon wafers, MICROEL ENG, 45(2-3), 1999, pp. 277-282
Authors:
De Gryse, O
Clauws, P
Rossou, L
Van Landuyt, J
Vanhellemont, J
Citation: O. De Gryse et al., Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon, REV SCI INS, 70(9), 1999, pp. 3661-3663
Authors:
Nistor, L
Van Landuyt, J
Ralchenko, V
Citation: L. Nistor et al., Structural aspects of CVD diamond wafers grown at different hydrogen flow rates, PHYS ST S-A, 174(1), 1999, pp. 5-9
Authors:
Fedina, L
Gutakovskii, A
Aseev, A
Van Landuyt, J
Vanhellemont, J
Citation: L. Fedina et al., Extended defects formation in Si crystals by clustering of intrinsic pointdefects studied by in-situ electron irradiation in an HREM, PHYS ST S-A, 171(1), 1999, pp. 147-157
Authors:
Rembeza, ES
Richard, O
Van Landuyt, J
Citation: Es. Rembeza et al., Influence of laser and isothermal treatments on microstructural propertiesof SnO2 films, MATER RES B, 34(10-11), 1999, pp. 1527-1533
Authors:
Cloetens, P
Ludwig, W
Baruchel, J
Van Dyck, D
Van Landuyt, J
Guigay, JP
Schlenker, M
Citation: P. Cloetens et al., Holotomography: Quantitative phase tomography with micrometer resolution using hard synchrotron radiation x rays, APPL PHYS L, 75(19), 1999, pp. 2912-2914
Authors:
Goessens, C
Schryvers, D
Van Landuyt, J
De Keyzer, R
Citation: C. Goessens et al., New method to determine the parity of the number of twin planes in tabularsilver halide microcrystals from top views, J IMAG SC T, 41(3), 1997, pp. 301-307
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