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Results: 1-11 |
Results: 11
Optical investigation of MBE grown Si-doped AlxGa1-xN as a function of nominal Al mole fraction up to 0.5
Authors: McFall, JL Hengehold, RL Yeo, YK Van Nostrand, JE Saxler, AW
Citation: Jl. Mcfall et al., Optical investigation of MBE grown Si-doped AlxGa1-xN as a function of nominal Al mole fraction up to 0.5, J CRYST GR, 227, 2001, pp. 458-465
Cooperative nucleation and evolution in InGaAs quantum dots in multiply stacked structures
Authors: Xie, QH Brown, JL Van Nostrand, JE
Citation: Qh. Xie et al., Cooperative nucleation and evolution in InGaAs quantum dots in multiply stacked structures, APPL PHYS L, 78(17), 2001, pp. 2491-2493
Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygenin n-type GaN thin solid films grown by gas-source molecular beam epitaxy
Authors: Van Nostrand, JE Solomon, J Saxler, A Xie, QH Reynolds, DC Look, DC
Citation: Je. Van Nostrand et al., Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygenin n-type GaN thin solid films grown by gas-source molecular beam epitaxy, J APPL PHYS, 87(12), 2000, pp. 8766-8772
Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates
Authors: Yang, JW Lunev, A Simin, G Chitnis, A Shatalov, M Khan, MA Van Nostrand, JE Gaska, R
Citation: Jw. Yang et al., Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates, APPL PHYS L, 76(3), 2000, pp. 273-275
Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening
Authors: Xie, QH Brown, JL Jones, RL Van Nostrand, JE Leedy, KD
Citation: Qh. Xie et al., Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening, APPL PHYS L, 76(21), 2000, pp. 3082-3084
Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy
Authors: Xie, QH Van Nostrand, JE
Citation: Qh. Xie et Je. Van Nostrand, Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy, J VAC SCI A, 17(2), 1999, pp. 342-346
Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy
Authors: Fang, ZQ Xie, QH Look, DC Ehret, J Van Nostrand, JE
Citation: Zq. Fang et al., Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy, J ELEC MAT, 28(8), 1999, pp. L13-L16
Shape stabilization and size equalization of InGaAs self-organized quantumdots
Authors: Xie, QH Brown, JL Jones, RL Van Nostrand, JE
Citation: Qh. Xie et al., Shape stabilization and size equalization of InGaAs self-organized quantumdots, J ELEC MAT, 28(12), 1999, pp. L42-L45
Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb-1 and Sb-2
Authors: Xie, QH Van Nostrand, JE Jones, RL Sizelove, J Look, DC
Citation: Qh. Xie et al., Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb-1 and Sb-2, J CRYST GR, 207(4), 1999, pp. 255-265
Cathodoluminescence, microstructure, and morphology of tensile-strained AlxGa(1-x)N epitaxial films grown by gas source molecular beam epitaxy
Authors: Van Nostrand, JE Hengehold, RL Leedy, KD Grant, JT Brown, JL Xie, QH
Citation: Je. Van Nostrand et al., Cathodoluminescence, microstructure, and morphology of tensile-strained AlxGa(1-x)N epitaxial films grown by gas source molecular beam epitaxy, J APPL PHYS, 86(6), 1999, pp. 3120-3128
Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure
Authors: Xie, QH Van Nostrand, JE Brown, JL Stutz, CE
Citation: Qh. Xie et al., Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure, J APPL PHYS, 86(1), 1999, pp. 329-337
Risultati: 1-11 |