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Results: 1-7 |
Results: 7
Degradation mechanisms in SOI n-channel LDMOSFETs
Authors: Vandooren, A Conley, JF Cristoloveanu, S Mojarradi, M Kolawa, E
Citation: A. Vandooren et al., Degradation mechanisms in SOI n-channel LDMOSFETs, MICROEL ENG, 59(1-4), 2001, pp. 489-495
Hall effect measurements in double-gate SOI MOSFETs
Authors: Vandooren, A Cristoloveanu, S Flandre, D Colinge, JP
Citation: A. Vandooren et al., Hall effect measurements in double-gate SOI MOSFETs, SOL ST ELEC, 45(10), 2001, pp. 1793-1798
Total-dose effects in double-gate-controlled NPN bipolar transistors
Authors: Vandooren, A Yuan, J Flandre, D Colinge, JP
Citation: A. Vandooren et al., Total-dose effects in double-gate-controlled NPN bipolar transistors, IEEE NUCL S, 48(5), 2001, pp. 1694-1699
Back-gate and series resistance effects in LDMOSFETs on SOI
Authors: Vandooren, A Cristoloveanu, S Mojarradi, M Kolawa, E
Citation: A. Vandooren et al., Back-gate and series resistance effects in LDMOSFETs on SOI, IEEE DEVICE, 48(10), 2001, pp. 2410-2416
Carrier lifetime extraction in fully depleted dual-gate SOI devices
Authors: Ernst, T Vandooren, A Cristoloveanu, S Colinge, JP Flandre, D
Citation: T. Ernst et al., Carrier lifetime extraction in fully depleted dual-gate SOI devices, IEEE ELEC D, 20(5), 1999, pp. 209-211
Gate-all-around OTA's for rad-hard and high-temperature analog applications
Authors: Vandooren, A Colinge, JP Flandre, D
Citation: A. Vandooren et al., Gate-all-around OTA's for rad-hard and high-temperature analog applications, IEEE NUCL S, 46(4), 1999, pp. 1242-1249
Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices
Authors: Ernst, T Cristoloveanu, S Vandooren, A Rudenko, T Colinge, JP
Citation: T. Ernst et al., Recombination current modeling and carrier lifetime extraction in dual-gate fully-depleted SOI devices, IEEE DEVICE, 46(7), 1999, pp. 1503-1509
Risultati: 1-7 |