AAAAAA

   
Results: 1-11 |
Results: 11
Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power
Authors: Saarinen, M Vilokkinen, V Dumitrescu, M Pessa, M
Citation: M. Saarinen et al., Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power, IEEE PHOTON, 13(1), 2001, pp. 10-12
Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy
Authors: Saarinen, M Xiang, N Vilokkinen, V Melanen, P Orsila, S Uusimaa, P Savolainen, P Toivonen, M Pessa, M
Citation: M. Saarinen et al., Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 324-328
Resonant cavity light-emitting diodes grown by solid source MBE
Authors: Orsila, S Leinonen, T Uusimaa, P Saarinen, M Guina, M Sipila, P Vilokkinen, V Melanen, P Dumitrescu, M Pessa, M
Citation: S. Orsila et al., Resonant cavity light-emitting diodes grown by solid source MBE, J CRYST GR, 227, 2001, pp. 346-351
Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth
Authors: Guina, M Orsila, S Dumitrescu, M Saarinen, M Sipila, P Vilokkinen, V Roycroft, B Uusimaa, P Toivonen, M Pessa, M
Citation: M. Guina et al., Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth, IEEE PHOTON, 12(7), 2000, pp. 786-788
Resonant cavity light-emitting diodes at 660 and 880 nm
Authors: Vilokkinen, V Sipila, P Melanen, P Saarinen, M Orsila, S Dumitrescu, M Savolainen, P Toivonen, M Pessa, M
Citation: V. Vilokkinen et al., Resonant cavity light-emitting diodes at 660 and 880 nm, MAT SCI E B, 74(1-3), 2000, pp. 165-167
Temperature behaviour of resonant cavity light-emitting diodes at 650 nm
Authors: Sipila, P Saarinen, M Guina, M Vilokkinen, V Toivonen, M Pessa, M
Citation: P. Sipila et al., Temperature behaviour of resonant cavity light-emitting diodes at 650 nm, SEMIC SCI T, 15(4), 2000, pp. 418-421
Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy
Authors: Dumitrescu, M Toikkanen, L Sipila, P Vilokkinen, V Melanen, P Saarinen, M Orsila, S Savolainen, P Toivonen, M Pessa, M
Citation: M. Dumitrescu et al., Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy, MICROEL ENG, 51-2, 2000, pp. 449-460
Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy
Authors: Pessa, M Toivonen, M Savolainen, P Orsila, S Sipila, P Saarinen, M Melanen, P Vilokkinen, V Uusimaa, P Haapamaa, J
Citation: M. Pessa et al., Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy, THIN SOL FI, 367(1-2), 2000, pp. 260-266
Room-temperature CW operation of red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy
Authors: Saarinen, M Toivonen, M Xiang, N Vilokkinen, V Pessa, M
Citation: M. Saarinen et al., Room-temperature CW operation of red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy, ELECTR LETT, 36(14), 2000, pp. 1210-1211
AlGaInAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solidsource molecular beam epitaxy
Authors: Savolainen, P Toivonen, M Orsila, S Saarinen, M Melanen, P Vilokkinen, V Dumitrescu, M Panarello, T Pessa, M
Citation: P. Savolainen et al., AlGaInAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solidsource molecular beam epitaxy, J ELEC MAT, 28(8), 1999, pp. 980-985
Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes
Authors: Toivonen, M Savolainen, P Orsila, S Vilokkinen, V Pessa, M Corvini, P Fang, F Nabiev, RF Jansen, M
Citation: M. Toivonen et al., Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes, J CRYST GR, 202, 1999, pp. 877-881
Risultati: 1-11 |