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Results: 1-14 |
Results: 14
Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thinfilms
Authors: Yang, W Vispute, RD Choopun, S Sharma, RP Venkatesan, T Shen, H
Citation: W. Yang et al., Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thinfilms, APPL PHYS L, 78(18), 2001, pp. 2787-2789
TEM study of bulk AlN growth by physical vapor transport
Authors: Sarney, WL Salamanca-Riba, L Hossain, T Zhou, P Jayatirtha, HN Kang, HH Vispute, RD Spencer, M Jones, KA
Citation: Wl. Sarney et al., TEM study of bulk AlN growth by physical vapor transport, MRS I J N S, 5, 2000, pp. NIL_329-NIL_334
Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices
Authors: Vispute, RD Patel, A Baynes, K Ming, B Sharma, RP Venkatesan, T Scozzie, CJ Lelis, A Zheleva, T Jones, KA
Citation: Rd. Vispute et al., Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices, MRS I J N S, 5, 2000, pp. NIL_509-NIL_514
The properties of annealed AlN films deposited by pulsed laser deposition
Authors: Jones, KA Derenge, MA Zheleva, TS Kirchner, KW Ervin, MH Wood, MC Vispute, RD Sharma, RP Venkatesan, T
Citation: Ka. Jones et al., The properties of annealed AlN films deposited by pulsed laser deposition, J ELEC MAT, 29(3), 2000, pp. 262-267
SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor
Authors: Sarney, WL Salamanca-Riba, L Vispute, RD Zhou, P Taylor, C Spencer, MG Jones, KA
Citation: Wl. Sarney et al., SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor, J ELEC MAT, 29(3), 2000, pp. 359-363
Al, B, and Ga ion-implantation doping of SiC
Authors: Handy, EM Rao, MV Holland, OW Chi, PH Jones, KA Derenge, MA Vispute, RD Venkatesan, T
Citation: Em. Handy et al., Al, B, and Ga ion-implantation doping of SiC, J ELEC MAT, 29(11), 2000, pp. 1340-1345
Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3
Authors: He, MQ Minus, I Zhou, PZ Mohammed, SN Halpern, JB Jacobs, R Sarney, WL Salamanca-Riba, L Vispute, RD
Citation: Mq. He et al., Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3, APPL PHYS L, 77(23), 2000, pp. 3731-3733
Annealing ion implanted SiC with an AlN cap
Authors: Jones, KA Shah, PB Kirchner, KW Lareau, RT Wood, MC Ervin, MH Vispute, RD Sharma, RP Venkatesan, T Holland, OW
Citation: Ka. Jones et al., Annealing ion implanted SiC with an AlN cap, MAT SCI E B, 61-2, 1999, pp. 281-286
Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition
Authors: Iliadis, AA Andronescu, SN Yang, W Vispute, RD Stanishevsky, A Orloff, JH Sharma, RP Venkatesan, T Wood, MC Jones, KA
Citation: Aa. Iliadis et al., Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition, J ELEC MAT, 28(3), 1999, pp. 136-140
Pulsed laser deposition and processing of wide band gap semiconductors andrelated materials
Authors: Vispute, RD Choopun, S Enck, R Patel, A Talyansky, V Sharma, RP Venkatesan, T Sarney, WL Salamanca-Riba, L Andronescu, SN Iliadis, AA Jones, KA
Citation: Rd. Vispute et al., Pulsed laser deposition and processing of wide band gap semiconductors andrelated materials, J ELEC MAT, 28(3), 1999, pp. 275-286
Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 degrees C
Authors: Scozzie, CJ Lelis, AJ McLean, FB Vispute, RD Choopun, S Patel, A Sharma, RP Venkatesan, T
Citation: Cj. Scozzie et al., Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 degrees C, J APPL PHYS, 86(7), 1999, pp. 4052-4054
Effectiveness of AlN encapsulant in annealing ion-implanted SiC
Authors: Handy, EM Rao, MV Jones, KA Derenge, MA Chi, PH Vispute, RD Venkatesan, T Papanicolaou, NA Mittereder, J
Citation: Em. Handy et al., Effectiveness of AlN encapsulant in annealing ion-implanted SiC, J APPL PHYS, 86(2), 1999, pp. 746-751
Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire
Authors: Choopun, S Vispute, RD Noch, W Balsamo, A Sharma, RP Venkatesan, T Iliadis, A Look, DC
Citation: S. Choopun et al., Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire, APPL PHYS L, 75(25), 1999, pp. 3947-3949
Ohmic contacts to p-6H-SiC using focused ion-beam surface-modification andpulsed laser epitaxial TiN deposition
Authors: Iliadis, AA Andronescu, SN Edinger, K Orloff, JH Vispute, RD Talyansky, V Sharma, RP Venkatesan, T Wood, MC Jones, KA
Citation: Aa. Iliadis et al., Ohmic contacts to p-6H-SiC using focused ion-beam surface-modification andpulsed laser epitaxial TiN deposition, APPL PHYS L, 73(24), 1998, pp. 3545-3547
Risultati: 1-14 |