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Results: 1-11 |
Results: 11
SPECTROSCOPIC ELLIPSOMETRY AND LOW-TEMPERATURE REFLECTANCE - COMPLEMENTARY ANALYSIS OF GAN THIN-FILMS
Authors: EDWARDS NV YOO SD BREMSER MD HORTON MN PERKINS NR WEEKS TW LIU H STALL RA KUECH TF DAVIS RF ASPNES DE
Citation: Nv. Edwards et al., SPECTROSCOPIC ELLIPSOMETRY AND LOW-TEMPERATURE REFLECTANCE - COMPLEMENTARY ANALYSIS OF GAN THIN-FILMS, Thin solid films, 313, 1998, pp. 187-192
GAIN CHARACTERISTICS OF INGAN GAN QUANTUM-WELL DIODE-LASERS/
Authors: SONG YK KUBALL M NURMIKKO AV BULMAN GE DOVERSPIKE K SHEPPERD ST WEEKS TW LEONARD M KONG HS DIERINGER H EDMOND J
Citation: Yk. Song et al., GAIN CHARACTERISTICS OF INGAN GAN QUANTUM-WELL DIODE-LASERS/, Applied physics letters, 72(12), 1998, pp. 1418-1420
SPECTRAL-ANALYSIS OF ABOVE-EDGE, BELOW-EDGE, AND NEAR-BAND-EDGE PHENOMENA IN GAN THIN-FILMS
Authors: EDWARDS NV YOO SD BREMSER MD ZHELEVA T HORTON MN PERKINS NR WEEKS TW LIU H STALL RA KUECH TF DAVIS RF ASPNES DE
Citation: Nv. Edwards et al., SPECTRAL-ANALYSIS OF ABOVE-EDGE, BELOW-EDGE, AND NEAR-BAND-EDGE PHENOMENA IN GAN THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 134-141
GROWTH OF ALN AND GAN THIN-FILMS VIA OMVPE AND GAS-SOURCE MBE AND THEIR CHARACTERIZATION
Authors: DAVIS RF WEEKS TW BREMSER MD TANAKA S KERN RS SITAR Z AILEY KS PERRY WG WANG C
Citation: Rf. Davis et al., GROWTH OF ALN AND GAN THIN-FILMS VIA OMVPE AND GAS-SOURCE MBE AND THEIR CHARACTERIZATION, Solid-state electronics, 41(2), 1997, pp. 129-134
PULSED OPERATION LASING IN A CLEAVED-FACET INGAN GAN MQW SCH LASER GROWN ON 6H-SIC/
Authors: BULMAN GE DOVERSPIKE K SHEPPARD ST WEEKS TW KONG HS DIERINGER HM EDMOND JA BROWN JD SWINDELL JT SCHETZINA JF
Citation: Ge. Bulman et al., PULSED OPERATION LASING IN A CLEAVED-FACET INGAN GAN MQW SCH LASER GROWN ON 6H-SIC/, Electronics Letters, 33(18), 1997, pp. 1556-1557
VARIATION OF GAN VALENCE BANDS WITH BIAXIAL STRESS AND QUANTIFICATIONOF RESIDUAL-STRESS
Authors: EDWARDS NV YOO SD BREMSER MD WEEKS TW NAM OH DAVIS RF LIU H STALL RA HORTON MN PERKINS NR KUECH TF ASPNES DE
Citation: Nv. Edwards et al., VARIATION OF GAN VALENCE BANDS WITH BIAXIAL STRESS AND QUANTIFICATIONOF RESIDUAL-STRESS, Applied physics letters, 70(15), 1997, pp. 2001-2003
UNDOPED AND DOPED GAN THIN-FILMS DEPOSITED ON HIGH-TEMPERATURE MONOCRYSTALLINE AIN BUFFER LAYERS ON VICINAL AND ON-AXIS ALPHA(6H)-SIC(0001)SUBSTRATES VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: WEEKS TW BREMSER MD AILEY KS CARLSON E PERRY WG PINER EL ELMASRY NA DAVIS RF
Citation: Tw. Weeks et al., UNDOPED AND DOPED GAN THIN-FILMS DEPOSITED ON HIGH-TEMPERATURE MONOCRYSTALLINE AIN BUFFER LAYERS ON VICINAL AND ON-AXIS ALPHA(6H)-SIC(0001)SUBSTRATES VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of materials research, 11(4), 1996, pp. 1011-1018
UV PHOTOEMISSION-STUDY OF HETEROEPITAXIAL ALGAN FILMS GROWN ON 6H-SIC
Authors: BENJAMIN MC BREMSER MD WEEKS TW KING SW DAVIS RF NEMANICH RJ
Citation: Mc. Benjamin et al., UV PHOTOEMISSION-STUDY OF HETEROEPITAXIAL ALGAN FILMS GROWN ON 6H-SIC, Applied surface science, 104, 1996, pp. 455-460
REAL-TIME ASSESSMENT OF OVERLAYER REMOVAL ON GAN, ALN, AND ALGAN SURFACES USING SPECTROSCOPIC ELLIPSOMETRY
Authors: EDWARDS NV BREMSER MD WEEKS TW KERN RS DAVIS RF ASPNES DE
Citation: Nv. Edwards et al., REAL-TIME ASSESSMENT OF OVERLAYER REMOVAL ON GAN, ALN, AND ALGAN SURFACES USING SPECTROSCOPIC ELLIPSOMETRY, Applied physics letters, 69(14), 1996, pp. 2065-2067
OVERVIEW OF GATE LINEWIDTH CONTROL IN THE MANUFACTURE OF CMOS LOGIC CHIPS
Authors: CHESEBRO DG ADKISSON JW CLARK LR ESLINGER SN FAUCHER MA HOLMES SJ MALLETTE RP NOWAK EJ SENGLE EW VOLDMAN SH WEEKS TW
Citation: Dg. Chesebro et al., OVERVIEW OF GATE LINEWIDTH CONTROL IN THE MANUFACTURE OF CMOS LOGIC CHIPS, IBM journal of research and development, 39(1-2), 1995, pp. 189-200
GAN THIN-FILMS DEPOSITED VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY ON ALPHA(6H)-SIC(0001) USING HIGH-TEMPERATURE MONOCRYSTALLINE ALN BUFFER LAYERS
Authors: WEEKS TW BREMSER MD AILEY KS CARLSON E PERRY WG DAVIS RF
Citation: Tw. Weeks et al., GAN THIN-FILMS DEPOSITED VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY ON ALPHA(6H)-SIC(0001) USING HIGH-TEMPERATURE MONOCRYSTALLINE ALN BUFFER LAYERS, Applied physics letters, 67(3), 1995, pp. 401-403
Risultati: 1-11 |