AAAAAA
Results:
1-20
|
Results: 20
Authors:
CHAHOUD M
WEHMANN HH
SCHLACHETZKI A
Citation: M. Chahoud et al., ETCHING SIMULATION OF CONVEX AND MIXED INP AND SI STRUCTURES, Sensors and actuators. A, Physical, 69(3), 1998, pp. 251-258
Authors:
WULLNER D
SCHLACHETZKI A
BONSCH P
WEHMANN HH
SCHRIMPF T
LACMANN R
KIPP S
Citation: D. Wullner et al., CHARACTERIZATION OF QUANTUM STRUCTURES BY ATOMIC-FORCE MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 178-187
Authors:
NOVAK J
HASENOHRL S
KUDELA R
KUCERA M
WULLNER D
WEHMANN HH
Citation: J. Novak et al., RESISTIVITY ANISOTROPY IN ORDERED INXGA1-XP GROWN AT 640-DEGREES-C, Applied physics letters, 73(3), 1998, pp. 369-371
Authors:
CHAHOUD M
WEHMANN HH
SCHLACHETZKI A
Citation: M. Chahoud et al., ANISOTROPIC-ETCHING SIMULATION OF INP AND SI, Sensors and actuators. A, Physical, 63(2), 1997, pp. 141-146
Authors:
MALACKY L
KUDELA R
MORVIC M
NOVAK J
WEHMANN HH
Citation: L. Malacky et al., PROPERTIES OF SILICON PULSE-DOPED INGAP LAYERS GROWN BY LP-MOCVD, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 33-36
Authors:
PEINER E
WEHMANN HH
IBER H
MO S
TANG GP
BARTELS A
SCHLACHETZKI A
KOCH A
DETTMER K
HOLLFELDER M
Citation: E. Peiner et al., HIGH-QUALITY IN0.53GA0.47AS ON EXACTLY (001)-ORIENTED SI GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 172(1-2), 1997, pp. 44-52
Authors:
BARTELS A
PEINER E
KLOCKENBRINK R
WEHMANN HH
SCHLACHETZKI A
Citation: A. Bartels et al., PERFORMANCE OF INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON SI, IEEE photonics technology letters, 8(5), 1996, pp. 670-672
Authors:
WEHMANN HH
TANG GP
KLOCKENBRINK R
Citation: Hh. Wehmann et al., DARK-CURRENT ANALYSIS OF INGAAS-MSM-PHOTODETECTORS ON SILICON SUBSTRATES, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1505-1509
Authors:
MALACKY L
KUDELA R
MORVIC M
CERNIANSKY M
PEINER E
WEHMANN HH
Citation: L. Malacky et al., DELTA-DOPED INGAP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(12), 1996, pp. 1731-1733
Authors:
KLOCKENBRINK R
PEINER E
BARTELS A
WEHMANN HH
SCHLACHETZKI A
Citation: R. Klockenbrink et al., PERFORMANCE OF INGAAS PHOTODETECTORS - LATERAL P-N AND P-N-P DIODES, IEEE photonics technology letters, 7(12), 1995, pp. 1480-1482
Authors:
HAHN D
JASCHINSKI O
WEHMANN HH
SCHLACHETZKI A
ORTENBERG MV
Citation: D. Hahn et al., ELECTRON-CONCENTRATION DEPENDENCE OF ABSORPTION AND REFRACTION IN N-IN0.53GA0.47AS NEAR THE BAND-EDGE, Journal of electronic materials, 24(10), 1995, pp. 1357-1361
Authors:
KLOCKENBRINK R
PEINER E
WEHMANN HH
SCHLACHETZKI A
Citation: R. Klockenbrink et al., AREA-SELECTIVE DIFFUSION OF ZN IN INP IN0.53GA0.47AS/INP FOR LATERAL PN PHOTODIODES/, Journal of the Electrochemical Society, 142(3), 1995, pp. 985-989
Authors:
LUBNOW A
TANG GP
WEHMANN HH
PEINER E
SCHLACHETZKI A
Citation: A. Lubnow et al., EFFECT OF III V-COMPOUND EPITAXY ON SI METAL-OXIDE-SEMICONDUCTOR CIRCUITS/, JPN J A P 1, 33(6A), 1994, pp. 3628-3634
Authors:
KLOCKENBRINK R
WEHMANN HH
SCHLACHETZKI A
Citation: R. Klockenbrink et al., IMPROVED THERMAL-STABILITY OF IN0.53GE0.47AS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH AL2O3 INTERFACIAL LAYER, IEEE photonics technology letters, 6(10), 1994, pp. 1213-1215
Authors:
KLOCKENBRINK R
WEHMANN HH
SCHLACHETZKI A
Citation: R. Klockenbrink et al., IMPROVED THERMAL-STABILITY OF IN0.53GE0.47AS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH AL2O3 INTERFACIAL LAYER, IEEE photonics technology letters, 6(10), 1994, pp. 1213-1215
Authors:
MALACKY L
KLOCKENBRINK R
DARMO J
WEHMANN HH
ZWINGE G
SCHLACHETZKI A
Citation: L. Malacky et al., INGAAS SCHOTTKY CONTACTS WITH AN IRON-DOPED INP ENHANCEMENT LAYER, Journal of physics. D, Applied physics, 27(11), 1994, pp. 2414-2417
Authors:
BAKIN A
ZWINGE G
KLOCKENBRINK R
WEHMANN HH
SCHLACHETZKI A
Citation: A. Bakin et al., SIMULATION OF THE ORIENTATION-DEPENDENT GROWTH OF INGAAS INP BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of applied physics, 76(8), 1994, pp. 4906-4908
Authors:
KLOCKENBRINK R
PEINER E
WEHMANN HH
SCHLACHETZKI A
Citation: R. Klockenbrink et al., WET CHEMICAL ETCHING OF ALIGNMENT V-GROOVES IN (100) INP THROUGH TITANIUM OR IN0.53GA0.47AS MASKS, Journal of the Electrochemical Society, 141(6), 1994, pp. 1594-1599
Authors:
ZWINGE G
WEHMANN HH
SCHLACHETZKI A
HSU CC
Citation: G. Zwinge et al., ORIENTATION-DEPENDENT GROWTH OF INGAAS INP FOR APPLICATIONS IN LASER-DIODE ARRAYS/, Journal of applied physics, 74(9), 1993, pp. 5516-5519
Authors:
ZWINGE G
ZIEGENMEYER I
WEHMANN HH
TANG GP
SCHLACHETZKI A
Citation: G. Zwinge et al., INP ON SI SUBSTRATES CHARACTERIZED BY SPECTROSCOPIC ELLIPSOMETRY, Journal of applied physics, 74(9), 1993, pp. 5889-5891
Risultati:
1-20
|