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Results: 1-25 |
Results: 25
SIDEWALL SLOPE CONTROL OF CHEMICALLY ASSISTED ION-BEAM ETCHED STRUCTURES IN INP-BASED MATERIALS
Authors: DALEIDEN J CZOTSCHER K HOFFMANN C KIEFER R KLUSSMANN S MULLER S NUTSCH A PLETSCHEN W WEISSER S TRANKLE G BRAUNSTEIN J WEIMANN G
Citation: J. Daleiden et al., SIDEWALL SLOPE CONTROL OF CHEMICALLY ASSISTED ION-BEAM ETCHED STRUCTURES IN INP-BASED MATERIALS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1864-1866
UNCOOLED HIGH-TEMPERATURE (130-DEGREES-C) OPERATION OF INGAAS-GAAS MULTIPLE-QUANTUM-WELL LASERS AT 20 GB S/
Authors: CZOTSCHER K LARKINS EC WEISSER S BENZ W DALEIDEN J FLEISSNER J MAIER M RALSTON JD ROSENZWEIG J
Citation: K. Czotscher et al., UNCOOLED HIGH-TEMPERATURE (130-DEGREES-C) OPERATION OF INGAAS-GAAS MULTIPLE-QUANTUM-WELL LASERS AT 20 GB S/, IEEE photonics technology letters, 9(5), 1997, pp. 575-577
LATERAL CARRIER PROFILE FOR MESA-STRUCTURED INGAAS GAAS LASERS/
Authors: TORRE MS ESQUIVIAS I ROMERO B CZOTSCHER K WEISSER S RALSTON JD LARKINS E BENZ W ROSENZWEIG J
Citation: Ms. Torre et al., LATERAL CARRIER PROFILE FOR MESA-STRUCTURED INGAAS GAAS LASERS/, Journal of applied physics, 81(9), 1997, pp. 6268-6271
DAMPING-LIMITED MODULATION BANDWIDTHS UP TO 40 GHZ IN UNDOPED SHORT-CAVITY IN0.35GA0.65AS-GAAS MULTIPLE-QUANTUM-WELL LASERS
Authors: WEISSER S LARKINS EC CZOTSCHER K BENZ W DALEIDEN J ESQUIVIAS I FLEISSNER J RALSTON JD ROMERO B SAH RE SCHONFELDER A ROSENZWEIG J
Citation: S. Weisser et al., DAMPING-LIMITED MODULATION BANDWIDTHS UP TO 40 GHZ IN UNDOPED SHORT-CAVITY IN0.35GA0.65AS-GAAS MULTIPLE-QUANTUM-WELL LASERS, IEEE photonics technology letters, 8(5), 1996, pp. 608-610
CARRIER CAPTURE AND ESCAPE TIMES IN IN0.35GA0.65AS-GAAS MULTI-QUANTUM-WELL LASERS DETERMINED FROM HIGH-FREQUENCY ELECTRICAL-IMPEDANCE MEASUREMENTS
Authors: ESQUIVIAS I WEISSER S ROMERO B RALSTON JD
Citation: I. Esquivias et al., CARRIER CAPTURE AND ESCAPE TIMES IN IN0.35GA0.65AS-GAAS MULTI-QUANTUM-WELL LASERS DETERMINED FROM HIGH-FREQUENCY ELECTRICAL-IMPEDANCE MEASUREMENTS, IEEE photonics technology letters, 8(10), 1996, pp. 1294-1296
FABRICATION OF DRY-ETCHED MIRRORS IN GAAS-BASED AND INP-BASED LASERS USING CHEMICALLY ASSISTED ION-BEAM ETCHING AT LOW-TEMPERATURES
Authors: SAH RE RALSTON JD DALEIDEN J LARKINS EC WEISSER S FLEISSNER J BENZ W
Citation: Re. Sah et al., FABRICATION OF DRY-ETCHED MIRRORS IN GAAS-BASED AND INP-BASED LASERS USING CHEMICALLY ASSISTED ION-BEAM ETCHING AT LOW-TEMPERATURES, Journal of electronic materials, 25(9), 1996, pp. 1446-1450
OPTICAL GAIN AND SPONTANEOUS EMISSION IN INGAAS GAAS MULTIPLE-QUANTUM-WELL LASER-DIODES/
Authors: SCHONFELDER A RALSTON JD CZOTSCHER K WEISSER S ROSENZWEIG J LARKINS EC
Citation: A. Schonfelder et al., OPTICAL GAIN AND SPONTANEOUS EMISSION IN INGAAS GAAS MULTIPLE-QUANTUM-WELL LASER-DIODES/, Journal of applied physics, 80(1), 1996, pp. 582-584
STRUCTURAL AND CARRIER DENSITY-DEPENDENCE OF CARRIER LIFETIME IN INGAAS GAAS MULTIPLE-QUANTUM-WELL LASERS/
Authors: CZOTSCHER K WEISSER S LARKINS EC FLEISSNER J RALSTON JD SCHONFELDER A ROSENZWEIG J ESQUIVIAS I
Citation: K. Czotscher et al., STRUCTURAL AND CARRIER DENSITY-DEPENDENCE OF CARRIER LIFETIME IN INGAAS GAAS MULTIPLE-QUANTUM-WELL LASERS/, Applied physics letters, 69(21), 1996, pp. 3158-3160
CARRIER PROFILE FOR IN0.35GA0.65AS GAAS MULTIQUANTUM-WELL LASERS FROMCAPACITANCE-VOLTAGE MEASUREMENTS/
Authors: ARIAS J ESQUIVIAS I RALSTON JD LARKINS EC WEISSER S ROSENZWEIG J SCHONFELDER A MAIER M
Citation: J. Arias et al., CARRIER PROFILE FOR IN0.35GA0.65AS GAAS MULTIQUANTUM-WELL LASERS FROMCAPACITANCE-VOLTAGE MEASUREMENTS/, Applied physics letters, 68(8), 1996, pp. 1138-1140
WAVELENGTH TUNING OF HIGH-SPEED INGAAS-GAAS-ALGAAS PSEUDOMORPHIC MQW LASERS VIA IMPURITY-FREE INTERDIFFUSION
Authors: BURKNER S RALSTON JD WEISSER S ROSENZWEIG J LARKINS EC SAH RE FLEISSNER J
Citation: S. Burkner et al., WAVELENGTH TUNING OF HIGH-SPEED INGAAS-GAAS-ALGAAS PSEUDOMORPHIC MQW LASERS VIA IMPURITY-FREE INTERDIFFUSION, IEEE photonics technology letters, 7(9), 1995, pp. 941-943
IMPROVED PERFORMANCE FROM PSEUDOMORPHIC INYGA1-YAS-GAAS MQW LASERS WITH LOW GROWTH TEMPERATURE ALXGA1-XAS SHORT-PERIOD SUPERLATTICE CLADDING
Authors: LARKINS EC BENZ W ESQUIVIAS I ROTHEMUND W BAEUMLER M WEISSER S SCHONFELDER A FLEISSNER J JANTZ W ROSENZWEIG J RALSTON JD
Citation: Ec. Larkins et al., IMPROVED PERFORMANCE FROM PSEUDOMORPHIC INYGA1-YAS-GAAS MQW LASERS WITH LOW GROWTH TEMPERATURE ALXGA1-XAS SHORT-PERIOD SUPERLATTICE CLADDING, IEEE photonics technology letters, 7(1), 1995, pp. 16-19
WOMEN OF SUBSTANCE - REPLY
Authors: WEISSER S
Citation: S. Weisser, WOMEN OF SUBSTANCE - REPLY, The New York times book review, 1995, pp. 23-23
CHARACTERISTICS OF A 2-COMPONENT CHEMICALLY-ASSISTED ION-BEAM ETCHINGTECHNIQUE FOR DRY-ETCHING OF HIGH-SPEED MULTIPLE-QUANTUM-WELL LASER MIRRORS
Authors: SAH RE RALSTON JD WEISSER S EISELE K
Citation: Re. Sah et al., CHARACTERISTICS OF A 2-COMPONENT CHEMICALLY-ASSISTED ION-BEAM ETCHINGTECHNIQUE FOR DRY-ETCHING OF HIGH-SPEED MULTIPLE-QUANTUM-WELL LASER MIRRORS, Applied physics letters, 67(7), 1995, pp. 927-929
PICOSECOND SPECTROSCOPY OF OPTICALLY MODULATED HIGH-SPEED LASER-DIODES
Authors: SUTTER DH SCHNEIDER H WEISSER S RALSTON JD LARKINS EC
Citation: Dh. Sutter et al., PICOSECOND SPECTROSCOPY OF OPTICALLY MODULATED HIGH-SPEED LASER-DIODES, Applied physics letters, 67(13), 1995, pp. 1809-1811
LOW-BIAS-CURRENT DIRECT MODULATION UP TO 33-GHZ IN INGAAS GAAS/ALGAASPSEUDOMORPHIC MQWRIDGE-WAVE-GUIDE LASERS/
Authors: RALSTON JD WEISSER S EISELE K SAH RE LARKINS EC ROSENZWEIG J FLEISSNER J BENDER K
Citation: Jd. Ralston et al., LOW-BIAS-CURRENT DIRECT MODULATION UP TO 33-GHZ IN INGAAS GAAS/ALGAASPSEUDOMORPHIC MQWRIDGE-WAVE-GUIDE LASERS/, IEEE photonics technology letters, 6(9), 1994, pp. 1076-1079
DIFFERENTIAL GAIN, REFRACTIVE-INDEX, AND LINEWIDTH ENHANCEMENT FACTORIN HIGH-SPEED GAAS-BASED MQW LASERS - INFLUENCE OF STRAIN AND P-DOPING
Authors: SCHONFELDER A WEISSER S RALSTON JD ROSENZWEIG J
Citation: A. Schonfelder et al., DIFFERENTIAL GAIN, REFRACTIVE-INDEX, AND LINEWIDTH ENHANCEMENT FACTORIN HIGH-SPEED GAAS-BASED MQW LASERS - INFLUENCE OF STRAIN AND P-DOPING, IEEE photonics technology letters, 6(8), 1994, pp. 891-893
IMPEDANCE, MODULATION RESPONSE, AND EQUIVALENT-CIRCUIT OF ULTRA-HIGH-SPEED IN0.35GA0.65AS GAAS MQW LASERS WITH P-DOPING/
Authors: WEISSER S ESQUIVIAS I TASKER PJ RALSTON JD ROSENZWEIG J
Citation: S. Weisser et al., IMPEDANCE, MODULATION RESPONSE, AND EQUIVALENT-CIRCUIT OF ULTRA-HIGH-SPEED IN0.35GA0.65AS GAAS MQW LASERS WITH P-DOPING/, IEEE photonics technology letters, 6(7), 1994, pp. 782-785
THEORETICAL INVESTIGATION OF GAIN ENHANCEMENTS IN STRAINED IN0.35GA0.65AS GAAS MQW LASERS VIA P-DOPING/
Authors: SCHONFELDER A WEISSER S ESQUIVIAS I RALSTON JD ROSENZWEIG J
Citation: A. Schonfelder et al., THEORETICAL INVESTIGATION OF GAIN ENHANCEMENTS IN STRAINED IN0.35GA0.65AS GAAS MQW LASERS VIA P-DOPING/, IEEE photonics technology letters, 6(4), 1994, pp. 475-478
IMPEDANCE CHARACTERISTICS OF QUANTUM-WELL LASERS
Authors: WEISSER S ESQUIVIAS I TASKER PJ RALSTON JD ROMERO B ROSENZWEIG J
Citation: S. Weisser et al., IMPEDANCE CHARACTERISTICS OF QUANTUM-WELL LASERS, IEEE photonics technology letters, 6(12), 1994, pp. 1421-1423
A FEMINIST HEROINE + REACTION TO CHEEVER,SUSAN REVIEW OF THE AUTOBIOGRAPHY OF MCCORVEY,NORMA
Authors: WEISSER S
Citation: S. Weisser, A FEMINIST HEROINE + REACTION TO CHEEVER,SUSAN REVIEW OF THE AUTOBIOGRAPHY OF MCCORVEY,NORMA, The New York times book review, 1994, pp. 31-31
GAIN SWITCHING IN HIGH-SPEED SEMICONDUCTOR-LASERS - INTERMEDIATE-SIGNAL ANALYSIS
Authors: SCHNEIDER H RALSTON JD OREILLY EP WEISSER S LARKINS EC
Citation: H. Schneider et al., GAIN SWITCHING IN HIGH-SPEED SEMICONDUCTOR-LASERS - INTERMEDIATE-SIGNAL ANALYSIS, Applied physics letters, 65(6), 1994, pp. 661-663
P-DOPANT INCORPORATION AND INFLUENCE ON GAIN AND DAMPING BEHAVIOR IN HIGH-SPEED GAAS-BASED STRAINED MQW LASERS
Authors: RALSTON JD WEISSER S ESQUIVIAS I SCHONFELDER A LARKINS EC ROSENZWEIG J TASKER PJ MAIER M FLEISSNER J
Citation: Jd. Ralston et al., P-DOPANT INCORPORATION AND INFLUENCE ON GAIN AND DAMPING BEHAVIOR IN HIGH-SPEED GAAS-BASED STRAINED MQW LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 232-236
ENHANCEMENTS IN MBE-GROWN HIGH-SPEED GAAS AND IN0.35GA0.65AS MQW LASER STRUCTURES USING BINARY SHORT-PERIOD SUPERLATTICES
Authors: RALSTON JD LARKINS EC ROTHEMUND W ESQUIVIAS I WEISSER S ROSENZWEIG J FLEISSNER J
Citation: Jd. Ralston et al., ENHANCEMENTS IN MBE-GROWN HIGH-SPEED GAAS AND IN0.35GA0.65AS MQW LASER STRUCTURES USING BINARY SHORT-PERIOD SUPERLATTICES, Journal of crystal growth, 127(1-4), 1993, pp. 19-24
CONTROL OF DIFFERENTIAL GAIN, NONLINEAR GAIN, AND DAMPING FACTOR FOR HIGH-SPEED APPLICATION OF GAAS-BASED MQW LASERS
Authors: RALSTON JD WEISSER S ESQUIVIAS I LARKINS EC ROSENZWEIG J TASKER PJ FLEISSNER J
Citation: Jd. Ralston et al., CONTROL OF DIFFERENTIAL GAIN, NONLINEAR GAIN, AND DAMPING FACTOR FOR HIGH-SPEED APPLICATION OF GAAS-BASED MQW LASERS, IEEE journal of quantum electronics, 29(6), 1993, pp. 1648-1659
ALPHA-FACTOR IMPROVEMENTS IN HIGH-SPEED P-DOPED IN0.35GA0.65AS GAAS MQW LASERS/
Authors: SCHONFELDER A WEISSER S RALSTON JD ROSENZWEIG J
Citation: A. Schonfelder et al., ALPHA-FACTOR IMPROVEMENTS IN HIGH-SPEED P-DOPED IN0.35GA0.65AS GAAS MQW LASERS/, Electronics Letters, 29(19), 1993, pp. 1685-1686
Risultati: 1-25 |