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Results: 1-13 |
Results: 13
ANNEALING BEHAVIOR OF FE-57 IMPLANTED IN ZRO2(Y)
Authors: ZHANG GL YU FH WENG HM ZHANG HH
Citation: Gl. Zhang et al., ANNEALING BEHAVIOR OF FE-57 IMPLANTED IN ZRO2(Y), Hyperfine interactions, 112(1-4), 1998, pp. 197-200
AN APPARATUS USED TO MAKE NA-22 SOURCES FOR USE IN LOW-ENERGY POSITRON BEAMS
Authors: WENG HM HU YF BELING CD FUNG S
Citation: Hm. Weng et al., AN APPARATUS USED TO MAKE NA-22 SOURCES FOR USE IN LOW-ENERGY POSITRON BEAMS, Applied surface science, 116, 1997, pp. 98-103
POSITRON BEAM PROFILING STUDY OF THE METAL-GAAS INTERFACE
Authors: LING CC WENG HM HU YF BELING CD FUNG S
Citation: Cc. Ling et al., POSITRON BEAM PROFILING STUDY OF THE METAL-GAAS INTERFACE, Applied surface science, 116, 1997, pp. 256-262
2-DIMENSIONAL ELECTRON-GAS IN DELTA-DOPED DOUBLE-QUANTUM WELLS FOR PHOTODETECTOR APPLICATION
Authors: LO IK CHANG YC WENG HM CHIANG JC MITCHEL WC
Citation: Ik. Lo et al., 2-DIMENSIONAL ELECTRON-GAS IN DELTA-DOPED DOUBLE-QUANTUM WELLS FOR PHOTODETECTOR APPLICATION, Journal of applied physics, 81(12), 1997, pp. 8112-8114
PHOTOINDUCED ELECTRON COUPLING IN DELTA-DOPED GAAS IN0.18GA0.82AS QUANTUM-WELLS/
Authors: LO I KAO MJ HSU WC KUO KK CHANG YC WENG HM CHIANG JC TSAY SF
Citation: I. Lo et al., PHOTOINDUCED ELECTRON COUPLING IN DELTA-DOPED GAAS IN0.18GA0.82AS QUANTUM-WELLS/, Physical review. B, Condensed matter, 54(7), 1996, pp. 4774-4779
ANNEALING STUDIES OF AU GAAS AND AL/GAAS INTERFACES USING A VARIABLE-ENERGY POSITRON BEAM/
Authors: LING CC LEE TC FUNG S BELING CD WENG HM XU JH SUN SJ HAN RD
Citation: Cc. Ling et al., ANNEALING STUDIES OF AU GAAS AND AL/GAAS INTERFACES USING A VARIABLE-ENERGY POSITRON BEAM/, Applied surface science, 85(1-4), 1995, pp. 305-310
MICROSTRUCTURE OF THE AU GAAS(110) INTERFACE PROBED USING A VARIABLE-ENERGY POSITRON BEAM/
Authors: LING CC LEE TC FUNG S BELING CD WENG HM XU JH SUN SJ HAN RD
Citation: Cc. Ling et al., MICROSTRUCTURE OF THE AU GAAS(110) INTERFACE PROBED USING A VARIABLE-ENERGY POSITRON BEAM/, Journal of physics. Condensed matter, 6(6), 1994, pp. 1133-1147
LOW-ENERGY POSITRON BEAM STUDIES OF NANO-TIN FILMS
Authors: WENG HM WANG DZ HAN RD JIANG Y YANG GQ LIU XH
Citation: Hm. Weng et al., LOW-ENERGY POSITRON BEAM STUDIES OF NANO-TIN FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 26(2-3), 1994, pp. 163-166
SEMIINSULATING GAAS - A POSSIBLE SUBSTRATE FOR A FIELD-ASSISTED POSITRON MODERATOR
Authors: SHAN YY AU HL LING CC LEE TC PANDA BK FUNG S BELING CD WANG YY WENG HM
Citation: Yy. Shan et al., SEMIINSULATING GAAS - A POSSIBLE SUBSTRATE FOR A FIELD-ASSISTED POSITRON MODERATOR, Applied physics. A, Solids and surfaces, 59(3), 1994, pp. 259-273
SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO TI/SI AND CO/SI/
Authors: LIU P LIN CL ZHOU ZY ZOU SC WENG HM HAN RD LI BZ
Citation: P. Liu et al., SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BY SOLID-STATE INTERACTION OF CO TI/SI AND CO/SI/, Chinese Physics Letters, 11(4), 1994, pp. 231-234
OBSERVATION OF SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BYSOLID-STATE INTERACTION OF CO TI/SI AND CO/SI/
Authors: LIU P LIN CL ZHOU ZY ZOU SC WENG HM HAN RD LI BZ
Citation: P. Liu et al., OBSERVATION OF SLOW POSITRON-ANNIHILATION IN SILICIDE FILMS FORMED BYSOLID-STATE INTERACTION OF CO TI/SI AND CO/SI/, Applied physics letters, 64(19), 1994, pp. 2501-2503
MICROSTRUCTURE OF AL GAAS INTERFACE STUDIED BY SLOW POSITRON BEAM/
Authors: WENG HM ZHOU XY XU JH SUN SJ ZHU JS WU SL HAN RD
Citation: Hm. Weng et al., MICROSTRUCTURE OF AL GAAS INTERFACE STUDIED BY SLOW POSITRON BEAM/, High energy physics & nuclear physics, 17(2), 1993, pp. 101-109
RESEARCH FOR CRYSTALLIZATION OF METALLIC-GLASS PD79.5NI4SI16.5
Authors: HAN RD WENG HM ZHOU XY XU JH ZHU JS LI XG SHA JA WANG JC
Citation: Rd. Han et al., RESEARCH FOR CRYSTALLIZATION OF METALLIC-GLASS PD79.5NI4SI16.5, High energy physics & nuclear physics, 17(1), 1993, pp. 33-37
Risultati: 1-13 |