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Results: 1-10 |
Results: 10
A NOVEL SYNTHETIC ROUTE TO ETHER-FREE METAL ALKYL PRECURSORS
Authors: WHITAKER TJ FREER RW MARTIN T JONES AC RUSHWORTH SA
Citation: Tj. Whitaker et al., A NOVEL SYNTHETIC ROUTE TO ETHER-FREE METAL ALKYL PRECURSORS, Journal of electronic materials, 25(7), 1996, pp. 1060-1063
ATOMIC-FORCE MICROSCOPY STUDIES OF SUBSTRATE CLEANING USING TRIS(DIMETHYLAMINO) ARSENIC AND TRIS(DIMETHYLAMINO) ANTIMONY AND INVESTIGATIONSOF SURFACE DECOMPOSITION MECHANISMS
Authors: WHITAKER TJ MARTIN T JOHNSON AD PIDDUCK AJ
Citation: Tj. Whitaker et al., ATOMIC-FORCE MICROSCOPY STUDIES OF SUBSTRATE CLEANING USING TRIS(DIMETHYLAMINO) ARSENIC AND TRIS(DIMETHYLAMINO) ANTIMONY AND INVESTIGATIONSOF SURFACE DECOMPOSITION MECHANISMS, Journal of crystal growth, 164(1-4), 1996, pp. 125-131
INCREASING THE RANGE OF GROWTH TEMPERATURES AVAILABLE FOR GAAS SELECTIVE-AREA GROWTH USING TRIISOPROPYLGALLIUM AND ARSINE
Authors: WHITAKER TJ MARTIN T FREER RW
Citation: Tj. Whitaker et al., INCREASING THE RANGE OF GROWTH TEMPERATURES AVAILABLE FOR GAAS SELECTIVE-AREA GROWTH USING TRIISOPROPYLGALLIUM AND ARSINE, Journal of crystal growth, 164(1-4), 1996, pp. 296-301
CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM
Authors: FREER RW LANE PA MARTIN T WHITEHOUSE CR WHITAKER TJ WILLIAMS GM CULLIS AG CALCOTT PDJ NASH KD BUCHANNAN H
Citation: Rw. Freer et al., CHEMICAL-BEAM-EPITAXY GROWTH OF INDIUM-CONTAINING III-V COMPOUNDS USING TRIISOPROPYLINDIUM, Journal of applied physics, 79(2), 1996, pp. 917-922
NEW ROUTES TO METAL-ORGANIC PRECURSORS - GROWTH OF HIGH-PURITY ALGAASBY CBE USING A NOVEL AMINE ADDUCT OF TRIISOPROPYLGALLIUM
Authors: FREER RW WHITAKER TJ MARTIN T CALCOTT PDJ HOULTON M LEE D JONES AC RUSHWORTH SA
Citation: Rw. Freer et al., NEW ROUTES TO METAL-ORGANIC PRECURSORS - GROWTH OF HIGH-PURITY ALGAASBY CBE USING A NOVEL AMINE ADDUCT OF TRIISOPROPYLGALLIUM, Advanced materials, 7(5), 1995, pp. 478-481
DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
Authors: KINGSLEY CR WHITAKER TJ WEE ATS JACKMAN RB FOORD JS
Citation: Cr. Kingsley et al., DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 78-82
CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH OPTICAL-QUALITY ALGAAS - THE INFLUENCE OF PRECURSOR PURITY ON MATERIAL PROPERTIES
Authors: FREER RW MARTIN T LANE PA WHITEHOUSE CR WHITAKER TJ HOULTON M CALCOTT PDJ LEE D RUSHWORTH SA
Citation: Rw. Freer et al., CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH OPTICAL-QUALITY ALGAAS - THE INFLUENCE OF PRECURSOR PURITY ON MATERIAL PROPERTIES, Journal of crystal growth, 150(1-4), 1995, pp. 539-545
IDENTIFICATION AND SEMIQUANTIFICATION OF ESTROGEN AND PROGESTERONE RECEPTORS IN PYOGENIC GRANULOMAS OF PREGNANCY
Authors: WHITAKER SB BOUQUOT JE ALIMARIO AE WHITAKER TJ
Citation: Sb. Whitaker et al., IDENTIFICATION AND SEMIQUANTIFICATION OF ESTROGEN AND PROGESTERONE RECEPTORS IN PYOGENIC GRANULOMAS OF PREGNANCY, Oral surgery, oral medicine, oral pathology, 78(6), 1994, pp. 755-760
INVESTIGATIONS OF THE GROWTH OF GAAS USING STABLE ADDUCTS OF GALLANE
Authors: FOORD JS WHITAKER TJ OHARE D JONES AC
Citation: Js. Foord et al., INVESTIGATIONS OF THE GROWTH OF GAAS USING STABLE ADDUCTS OF GALLANE, Journal of crystal growth, 136(1-4), 1994, pp. 127-132
INVESTIGATION OF THE GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GALLANE-QUINUCLIDINE ADDUCT
Authors: FOORD JS WHITAKER TJ DOWNING EN OHARE D JONES AC
Citation: Js. Foord et al., INVESTIGATION OF THE GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GALLANE-QUINUCLIDINE ADDUCT, Applied physics letters, 63(9), 1993, pp. 1270-1272
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