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Results: 1-23 |
Results: 23
MICROFABRICATION AND CHARACTERIZATION OF GRIDDED POLYCRYSTALLINE SILICON FIELD EMITTER DEVICES
Authors: HUQ SE HUANG M WILSHAW PR PREWETT PD
Citation: Se. Huq et al., MICROFABRICATION AND CHARACTERIZATION OF GRIDDED POLYCRYSTALLINE SILICON FIELD EMITTER DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 796-798
A COMPARISON BETWEEN THE USE OF EBIC AND IBIC MICROSCOPY FOR SEMICONDUCTOR DEFECT ANALYSIS
Authors: BREESE MBH AMAKU A WILSHAW PR
Citation: Mbh. Breese et al., A COMPARISON BETWEEN THE USE OF EBIC AND IBIC MICROSCOPY FOR SEMICONDUCTOR DEFECT ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1355-1360
CHARACTERIZATION OF POROUS SILICON FIELD EMITTER PROPERTIES
Authors: BOSWELL EC HUANG M SMITH GDW WILSHAW PR
Citation: Ec. Boswell et al., CHARACTERIZATION OF POROUS SILICON FIELD EMITTER PROPERTIES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1895-1898
POLYCRYSTALLINE SILICON FIELD EMITTERS
Authors: BOSWELL EC HUQ SE HUANG M PREWETT PD WILSHAW PR
Citation: Ec. Boswell et al., POLYCRYSTALLINE SILICON FIELD EMITTERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1910-1913
MODELING OF THE FIELD-EMISSION MICROTRIODE WITH EMITTER COVERED WITH POROUS SILICON
Authors: NICOLAESCU D FILIP V WILSHAW PR
Citation: D. Nicolaescu et al., MODELING OF THE FIELD-EMISSION MICROTRIODE WITH EMITTER COVERED WITH POROUS SILICON, Applied surface science, 94-5, 1996, pp. 79-86
DEFECT IMAGING AND CHANNELING STUDIES USING CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY
Authors: KING PJC BREESE MBH SMULDERS PJM WILSHAW PR GRIME GW
Citation: Pjc. King et al., DEFECT IMAGING AND CHANNELING STUDIES USING CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 426-430
IMAGING OF THE STRAIN FIELD AROUND PRECIPITATE PARTICLES USING TRANSMISSION ION CHANNELING
Authors: KING PJC BREESE MBH MEEKESON D SMULDERS PJM WILSHAW PR GRIME GW
Citation: Pjc. King et al., IMAGING OF THE STRAIN FIELD AROUND PRECIPITATE PARTICLES USING TRANSMISSION ION CHANNELING, Journal of applied physics, 80(5), 1996, pp. 2671-2679
A STUDY OF THE EFFECTS OF POSTDEPOSITION TREATMENTS ON CDS CDTE THIN-FILM SOLAR-CELLS USING HIGH-RESOLUTION OPTICAL BEAM-INDUCED CURRENT/
Authors: GALLOWAY SA BRINKMAN AW DUROSE K WILSHAW PR HOLLAND AJ
Citation: Sa. Galloway et al., A STUDY OF THE EFFECTS OF POSTDEPOSITION TREATMENTS ON CDS CDTE THIN-FILM SOLAR-CELLS USING HIGH-RESOLUTION OPTICAL BEAM-INDUCED CURRENT/, Applied physics letters, 68(26), 1996, pp. 3725-3727
STUDIES OF POROUS SILICON FIELD EMITTERS
Authors: BOSWELL E SEONG TY WILSHAW PR
Citation: E. Boswell et al., STUDIES OF POROUS SILICON FIELD EMITTERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 437-440
BACKSCATTERED ELECTRON CONTRAST ON CROSS-SECTIONS OF INTERFACES AND MULTILAYERS IN THE SCANNING ELECTRON-MICROSCOPE
Authors: KONKOL A BOOKER GR WILSHAW PR
Citation: A. Konkol et al., BACKSCATTERED ELECTRON CONTRAST ON CROSS-SECTIONS OF INTERFACES AND MULTILAYERS IN THE SCANNING ELECTRON-MICROSCOPE, Ultramicroscopy, 58(3-4), 1995, pp. 233-237
TRANSMISSION ION CHANNELING IMAGES OF CRYSTAL DEFECTS
Authors: KING PJC BREESE MBH WILSHAW PR SMULDERS PJM GRIME GW
Citation: Pjc. King et al., TRANSMISSION ION CHANNELING IMAGES OF CRYSTAL DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 419-422
APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS
Authors: KING PJC BREESE MBH WILSHAW PR GRIME GW
Citation: Pjc. King et al., APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 104(1-4), 1995, pp. 233-237
IMAGING OF DEEP DEFECTS USING TRANSMISSION ION CHANNELING
Authors: KING PJC BREESE MBH WILSHAW PR GRIME GW
Citation: Pjc. King et al., IMAGING OF DEEP DEFECTS USING TRANSMISSION ION CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(3), 1995, pp. 365-370
STACKING-FAULT IMAGING USING TRANSMISSION ION CHANNELING
Authors: KING PJC BREESE MBH WILSHAW PR GRIME GW
Citation: Pjc. King et al., STACKING-FAULT IMAGING USING TRANSMISSION ION CHANNELING, Physical review. B, Condensed matter, 51(5), 1995, pp. 2732-2741
OBSERVATION OF A BLOCKING TO CHANNELING TRANSITION FOR MEV PROTONS ATSTACKING-FAULTS IN SILICON
Authors: KING PJC BREESE MBH SMULDERS PJM WILSHAW PR GRIME GW
Citation: Pjc. King et al., OBSERVATION OF A BLOCKING TO CHANNELING TRANSITION FOR MEV PROTONS ATSTACKING-FAULTS IN SILICON, Physical review letters, 74(3), 1995, pp. 411-414
ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF TRANSITION-METAL IMPURITIES AT EXTENDED DEFECTS IN SILICON
Authors: WILSHAW PR FELL TS
Citation: Pr. Wilshaw et Ts. Fell, ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF TRANSITION-METAL IMPURITIES AT EXTENDED DEFECTS IN SILICON, Journal of the Electrochemical Society, 142(12), 1995, pp. 4298-4304
FIELD-EMISSION FROM PYRAMIDAL CATHODES COVERED IN POROUS SILICON
Authors: WILSHAW PR BOSWELL EC
Citation: Pr. Wilshaw et Ec. Boswell, FIELD-EMISSION FROM PYRAMIDAL CATHODES COVERED IN POROUS SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 662-665
ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON
Authors: WILSHAW PR FELL TS AMAKU CA DECOTEAU MD
Citation: Pr. Wilshaw et al., ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 8-14
AN ELECTRON-BEAM-INDUCED CURRENT STUDY OF DISLOCATIONS IN GAAS
Authors: GALLOWAY SA WILSHAW PR KONKOL A
Citation: Sa. Galloway et al., AN ELECTRON-BEAM-INDUCED CURRENT STUDY OF DISLOCATIONS IN GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 91-97
DECONVOLUTION METHOD TO OBTAIN COMPOSITION PROFILES FROM SEM BACKSCATTERED ELECTRON SIGNAL PROFILES FOR BULK SPECIMENS
Authors: KONKOL A WILSHAW PR BOOKER GR
Citation: A. Konkol et al., DECONVOLUTION METHOD TO OBTAIN COMPOSITION PROFILES FROM SEM BACKSCATTERED ELECTRON SIGNAL PROFILES FOR BULK SPECIMENS, Ultramicroscopy, 55(2), 1994, pp. 183-195
EMISSION CHARACTERISTICS AND MORPHOLOGY OF WET ETCHED CATHODES IN P-TYPE SILICON
Authors: BOSWELL EC WILSHAW PR
Citation: Ec. Boswell et Pr. Wilshaw, EMISSION CHARACTERISTICS AND MORPHOLOGY OF WET ETCHED CATHODES IN P-TYPE SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 412-415
DISLOCATION IMAGING WITH A SCANNING PROTON MICROPROBE USING CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY (CSTIM)
Authors: KING PJC BREESE MBH BOOKER GR WHITEHURST J WILSHAW PR GRIME GW WATT F GORINGE MJ
Citation: Pjc. King et al., DISLOCATION IMAGING WITH A SCANNING PROTON MICROPROBE USING CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY (CSTIM), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 77(1-4), 1993, pp. 320-331
EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
Authors: FELL TS WILSHAW PR DECOTEAU MD
Citation: Ts. Fell et al., EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON, Physica status solidi. a, Applied research, 138(2), 1993, pp. 695-704
Risultati: 1-23 |